1030-1090MHz
Abstract: TRANSISTOR Z4 M112 SD1542
Text: SD1542 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS 600 WATTS typ. IFF 1030/1090 MHz 550 WATTS (min.) DME 1025 - 1150 MHz 5.6 dB MIN. GAIN REFRACTORY GOLD METALLIZATION BALLASTING AND LOW THERMAL
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SD1542
SD1542
1030-1090MHz
TRANSISTOR Z4
M112
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capacitor 1000uf
Abstract: M112 SD1542-04 SD1542-4 capacitor 680pf transistor Z2 SD1542
Text: SD1542-04 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS min. IFF 1030/1090 MHz REFRACTORY GOLD METALLIZATION 6.0 dB MIN. GAIN BALLASTING AND LOW THERMAL REISTANCE FOR RELIABILITY AND RUGGEDNESS
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SD1542-04
SD1542-4
SD1542-04
SD154204
capacitor 1000uf
M112
SD1542-4
capacitor 680pf
transistor Z2
SD1542
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SD1542-42
Abstract: SD1542
Text: ASI SD1542-42 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 X 500 2L FLG The ASI SD1542-42 is a Common Base Device Designed for, IFF and DME Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Hermetically Sealed
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SD1542-42
SD1542-42
SD1542
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Untitled
Abstract: No abstract text available
Text: ASI SD1542-42 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 X 500 2L FLG The ASI SD1542-42 is a Common Base Device Designed for, IFF and DME Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Hermetically Sealed
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SD1542-42
SD1542-42
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M112
Abstract: SD1542 SQC6
Text: SD1542 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS 600 WATTS typ. IFF 1030/1090 MHz 550 WATTS (min.) DME 1025 - 1150 MHz 5.6 dB MIN. GAIN REFRACTORY GOLD METALLIZATION BALLASTING AND LOW THERMAL
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SD1542
SD1542
M112
SQC6
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Epsilam-10
Abstract: SD1542 epsilam M112 ep 965
Text: SD1542 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS • 600 W typ. IFF 1030/1090 MHz • 550W (min.) DME 1025 - 1150 MHz • 5.6 dB min. GAIN • REFRACTORY GOLD METALLIZATION • EMITTER BALLASTING AND LOW THERMAL
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SD1542
SD1542
Epsilam-10
epsilam
M112
ep 965
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SD1542-42
Abstract: M112 SD1542
Text: SD1542-42 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS min. IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.0 dB MIN. GAIN LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT
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SD1542-42
SD1542-42
SD154242
M112
SD1542
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SD1542
Abstract: "RF Power Transistor" 5002L
Text: ASI SD1542 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1542 is a Common Base Device Designed for, IFF and DME Pulse Applications. PACKAGE STYLE .400 X 500 2L FLG FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Hermetically Sealed
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SD1542
SD1542
"RF Power Transistor"
5002L
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SD1542-42
Abstract: 5002l
Text: ASI SD1542-42 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 X 500 2L FLG The ASI SD1542-42 is a Common Base Device Designed for, IFF and DME Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Hermetically Sealed
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SD1542-42
SD1542-42
5002l
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M112
Abstract: SD1542-04 SD1542-4
Text: SD1542-04 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS min. IFF 1030/1090 MHz REFRACTORY GOLD METALLIZATION 6.0 dB MIN. GAIN BALLASTING AND LOW THERMAL REISTANCE FOR RELIABILITY AND RUGGEDNESS
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SD1542-04
SD1542-4
SD1542-04
SD154204
M112
SD1542-4
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Epsilam-10
Abstract: M112 SD1542
Text: SD1542 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS • 600 W typ. IFF 1030/1090 MHz • 550W (min.) DME 1025 - 1150 MHz • 5.6 dB min. GAIN • REFRACTORY GOLD METALLIZATION • EMITTER BALLASTING AND LOW THERMAL
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SD1542
SD1542
Epsilam-10
M112
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1070 SGS transistor
Abstract: SD1542-42 M112
Text: SD1542-42 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS min. IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.0 dB MIN. GAIN LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT
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SD1542-42
SD1542-42
SD154242
1070 SGS transistor
M112
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SD1542-42
Abstract: M112 SO 42 P
Text: SD1542-42 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . DESIGNED FOR HIGH POWER PULSED IFF 600 WATTS min. IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.0 dB MIN. GAIN LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT
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SD1542-42
SD1542-42
SD154242
M112
SO 42 P
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tp2304
Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12
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AM1214-100
AM1214-200
AM1214-325
AM80912005
AM80912015
AM80912030
AM80912085
AM80912150
AM81214006
AM81214015
tp2304
TPV3100
TP9383
TP2330
MRF2001
PT9783
PT9780
tp8828f
BLY93A
mrf 406 application circuit
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Text: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2N5944
2N5945
2N5946
2N6082
2N6084
2N6439
2SC1257
2SC1258
2SC1259
2SC1605A
MRF648
TPV3100
2SC2897
macom
TP3034
SD1393
TP3008
tp9383
transistor 2sC636
MRF255 equivalent
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SO42
Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002
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PowerSO-10RF
PD54003
PD54008
PD55003
PD55008
PD55015
PD55025S
PD57002
PD57006
PD57018
SO42
STM 160-30
"class AB Linear" hf
PD55003 equivalent
SD57045
linear amplifier 470-860
LT5232
VHF lna 30 to
SD4100
SD2932 linear amplifier
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2SC636
Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Text: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642
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2SC1257
2SC1258
2SC1259
2SC1605A
2SC1729
2SC1804
2SC1805
2SC1946
2SC1946A
2SC1967
2SC636
2sc635
MHW820-1
TP3008
2SC2897
SD1477
2sc2652
TP3034
2SC1804
SD1470
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Untitled
Abstract: No abstract text available
Text: / = 7 S G S - T H O M S O N SD1542 ^ 7 / . M Œ m iIêTM M IKêS RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS . 600 WATTS typ. IFF 1030/1090 MHz . 550 WATTS (min.) DME 1025 - 1150 MHz • 5.6 dB MIN. GAIN
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SD1542
SD1542
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PDF
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Untitled
Abstract: No abstract text available
Text: / = 7 SGS-THOMSON SD1542 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS . 600 WATTS typ. IFF 1030/1090 MHz • 550 WATTS (min.) DME 1025 - 1150 MHz . 5.6 dB MIN. GAIN ■ REFRACTORY GOLD METALLIZATION
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SD1542
SD1542
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UJ300
Abstract: DFCA
Text: /^ 37 /T SGS-THOMSON R SD1542-42 RF & MICROWAVE TRANSISTO RS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF ■ 600 WATTS min. IFF 1030 or 1 090 MHz ■ REFRACTORY GOLD METALLIZATION . 6.0 dB MIN. GAIN ■ LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS
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SD1542-42
SD1542-42
SD154242
UJ300
DFCA
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PDF
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Untitled
Abstract: No abstract text available
Text: /=T SGS-THOMSON A T /. oain g^ gL[i(gTO©Mn(gi_ S D 1 5 4 2 -0 4 RF & M I C R O W A V E T R A N S I S T O R S A V IO N IC S A P P LIC A TIO N S > DESIGNED FOR HIGH POWER PULSED IFF . 600 WATTS (min. IFF 1030/1090 MHz . REFRACTORY GOLD METALLIZATION
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SD1542-04
SD154204
1994SGS-THOMSON
fci31
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ic tea 1090
Abstract: M/ic rca 645 TEA 1090
Text: SGS-THOMSON 5 7 . MD@Bi ilLim©ISID©i SD 1542-42 RF & MICROWAVE TR AN SISTO R S AVIONICS APPLICATIONS . DESIGNED FOR HIGH POWER PULSED IFF • 600 WATTS min. IFF 1030 or 1090 MHz . REFRACTORY GOLD METALLIZATION ■ 6.0 dB MIN. GAIN . LOW THERMAL RESISTANCE FOR
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SD1542-42
SD1542-42
SD154242
ic tea 1090
M/ic rca 645
TEA 1090
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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