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    SEMIX453GD12E4C Price and Stock

    SEMIKRON SEMIX453GD12E4C

    Igbt Module, Six, 1.2Kv, 683A; Continuous Collector Current:683A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX453GD12E4C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX453GD12E4C Bulk 2
    • 1 $1671.95
    • 10 $1625.18
    • 100 $1531.65
    • 1000 $1531.65
    • 10000 $1531.65
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    SEMIKRON SEMIX453GD12E4C 27890212

    Module: IGBT; transistor/transistor; IGBT three-phase bridge
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX453GD12E4C 27890212 1
    • 1 $1895.84
    • 10 $1400.81
    • 100 $1295.49
    • 1000 $1295.49
    • 10000 $1295.49
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    SEMIX453GD12E4C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMiX453GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX453GD12E4c E63532 AppiX453GD12E4c

    Untitled

    Abstract: No abstract text available
    Text: SEMiX453GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX453GD12E4c E63532

    Untitled

    Abstract: No abstract text available
    Text: SEMiX453GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules SEMiX453GD12E4c VGES tpsc Tj ICRM = 3xICnom VCC = 800 V


    Original     		PDF SEMiX453GD12E4c E63532

    semix453gd12e4c

    Abstract: No abstract text available
    Text: SEMiX453GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX453GD12E4c E63532 semix453gd12e4c

    Untitled

    Abstract: No abstract text available
    Text: SEMiX453GD12E4c Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 33c Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


    Original     		PDF SEMiX453GD12E4c E63532 3xI3GD12E4c

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		PDF SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1