phototransistor 600 nm
Abstract: simple phototransistor phototransistor 800 nm all datasheet phototransistor Infrared Phototransistor led and phototransistor simple circuit phototransistor datasheet SDP8407
Text: 17 September 1997 SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION
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SDP8407
SEP8507
INFRA-16
SDP8407
phototransistor 600 nm
simple phototransistor
phototransistor 800 nm
all datasheet phototransistor
Infrared Phototransistor
led and phototransistor simple circuit
phototransistor datasheet
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Infrared Phototransistor
Abstract: simple phototransistor SDP8407 diode honeywell
Text: 17 September 1997 SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135¡ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor
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SEP8507
SDP8407
INFRA-18
SEP8507
Infrared Phototransistor
simple phototransistor
diode honeywell
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SDP8407
Abstract: No abstract text available
Text: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135¡ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor INFRA-18.TIF DESCRIPTION
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SEP8507
SDP8407
INFRA-18
SEP8507
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simple phototransistor
Abstract: phototransistor 600 nm phototransistor datasheet SDP8407
Text: SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package • 135¡ nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode INFRA-16.TIF DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded
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SDP8407
SEP8507
INFRA-16
SDP8407
simple phototransistor
phototransistor 600 nm
phototransistor datasheet
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HOA1397-002
Abstract: sensor transistor HOA1397 HOA1397-001 HOA1397-031 SDP8407 IR Sensor continuous phototransistor as sensor
Text: Datasheet - HOA1397-002 HOA1397-002 HOA Series Reflective Sensor, Transistor Output, Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● Due to regional agency approval requirements, some products may not be
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HOA1397-002
HOA1397
HOA1397-001,
HOA1397-031,
20and
20Settings/rabab/Desktop/Datasheet
20HOA1397-002
HOA1397-002
sensor transistor
HOA1397-001
HOA1397-031
SDP8407
IR Sensor continuous
phototransistor as sensor
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radiation detector
Abstract: HOA1397 HOA1397-001 HOA1397-031 SDP8407
Text: 17 September 1997 HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces INFRA-10.TIF DESCRIPTION The HOA1397 series consists of an infrared emitting
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HOA1397
INFRA-10
HOA1397
HOA1397-001,
HOA1397-031,
SEP8507
SDP8407.
radiation detector
HOA1397-001
HOA1397-031
SDP8407
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HOA1397
Abstract: HOA1397-001 HOA1397-031 HOA1397-032 SDP8407
Text: HOA1397-032 HOA Series Reflective Sensor, Darlington Output, Plastic Package Actual product appearance may vary. Features Choice of phototransistor or photodarlington output ● Low profile for design flexibility ● Unfocused for sensing diffused surfaces
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HOA1397-032
HOA1397
HOA1397-001,
HOA1397-031,
SEP8507
HOA1397-001
HOA1397-031
HOA1397-032
SDP8407
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HOA0963-T51
Abstract: HOA0973-N55 SD5421-002 HOA0961-N51 SDP8004-301 HOA1879-012 HOA0973-N51 HOA0973N51 HOA2001-001 SD1420-002
Text: Sensing and Control ! " = = Sept, 2002 = E-mail:[email protected] www.honeywell.com/sensing/ !"#$%& LED mm 1 !" 1 935mm @IF(mA) 2 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 24 1.65 0.20 24 24 0.35 0.70 24 24 1.00 0.35 24 24 0.65 1.10 24 18 1.65
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SE3450-011
SE3450-012
SE3450-013
SE3450-014
SE3455-001
SE3455-002
SE3455-003
SE3455-004
SE3470-001
SE3470-002
HOA0963-T51
HOA0973-N55
SD5421-002
HOA0961-N51
SDP8004-301
HOA1879-012
HOA0973-N51
HOA0973N51
HOA2001-001
SD1420-002
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teradyne A360
Abstract: IRED A360 SE1450 SE2460 SE3450 SE5450 SEP8505 SEP8506 SE1455
Text: Reliability Summary of SEC450 GaAs:Si IRED Chip Long-Term Operating Life Study INTRODUCTION Honeywell is committed to the manufacture of reliable, high quality optoelectronic products. An ISO 9001 quality system is maintained, providing the necessary controls to assure that all product meets or exceeds the
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SEC450
SE1450/1455
SE3450/5450
SEP8505
SEP8506
SEP8507
teradyne A360
IRED
A360
SE1450
SE2460
SE3450
SE5450
SE1455
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HOA1397
Abstract: SDP8407
Text: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces INFRA-10.TIF DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor
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HOA1397
INFRA-10
HOA1397
HOA1397-
SEP8507
SDP8407.
SDP8407
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SEP8507-001
Abstract: SEP8507
Text: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135“ nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting
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PDF
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SEP8507
SDP8407
SEP8507
SEP8507-001
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Untitled
Abstract: No abstract text available
Text: SDP8407 Silicon Phototransistor FEATURES • End-looking plastic package . 135° nominal acceptance angle . Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode DESCRIPTION The SDP8407 is an NPN silicon phototransistor molded
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PDF
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SDP8407
SEP8507
SDP8407
0D2S55E
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SEP8507
Abstract: No abstract text available
Text: SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • 135° nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor DESCRIPTION The SEP8507 is a gallium arsenide infrared emitting
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PDF
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SEP8507
SDP8407
SEP8507
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SEP8507
Abstract: No abstract text available
Text: SDP8407 Silicon Phototransistor FEATUR ES • End-looking plastic package • 135° nominal acceptance angle • Low profile for design flexibility • Mechanically and spectrally matched to SEP8507 infrared emitting diode DESCRIPTION The SD P8407 is an NPN silicon phototransistor molded
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PDF
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SDP8407
SEP8507
P8407
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HOA149-1
Abstract: HOA708-1 HOA709-1 HOA708 HOA1405-1 HOA1405-2 HOA708-11 HOA709-11 HOA149 BUT 11 Transistor
Text: HONEYWELL INC/ MICRO Assemblies 11E D m 4SS1S3D 0013884 B • HON1 7 ^ > - d / Reflective With Plastic Encapsulated Components Honeywell has a complete line of reflective assemblies built with plastic-encapsulated components. HLC1395 is a component that functions like an assembly. HOA149,
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QD13flfll4
HLC1395
HOA149,
HOA708,
HOA709,
HOA1405
SEP8505IRED,
SDP8405
SDP8105
HOA1397
HOA149-1
HOA708-1
HOA709-1
HOA708
HOA1405-1
HOA1405-2
HOA708-11
HOA709-11
HOA149
BUT 11 Transistor
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HOA1397-032
Abstract: No abstract text available
Text: H O A 1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffuse surfaces DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor
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HOA1397
HOA1397-001,
HOA1397-031,
SEP8507
SDP8407.
HOA1397-032
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HOA1405-1
Abstract: HOA149-1 HOA1405-2 HOA708 HOA709-1 HOA708-1 HOA709-11 HOA708-11 HOA709 HOA149
Text: HO NE YWELL INC/ MICRO Assemblies 41E D • 4SS1A3D 0D13fifl4 2 ■ H O N L Reflective With Plastic Encapsulated Components Honeywell has a complete line of reflective assemblies built with plastic-encapsulated components. HLC1395 is a component that functions like an assembly. HOA149,
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PDF
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HLC1395
HOA149,
HOA708,
HOA709,
HOA1405
SEP8505IRED,
SDP8405
SDP8105
HOA1397
SEP8507
HOA1405-1
HOA149-1
HOA1405-2
HOA708
HOA709-1
HOA708-1
HOA709-11
HOA708-11
HOA709
HOA149
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Untitled
Abstract: No abstract text available
Text: HOA1397 Reflective Sensor FEATURES • Choice of phototransistor or photodarlington output • Low profile for design flexibility • Unfocused for sensing diffused surfaces DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor
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HOA1397
HOA1397
HOA1397-001,
HOA1397-031,
SEP8507
SDP8407.
4551A30
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E5450
Abstract: E1470 1450001 345-500 SE5470 E1450 u 880 e
Text: Selection Guide - Infrared Emitting Diodes Metal Package Components P ackage Part X Beam Style Num ber (nm ) Angle Total Pow er O utput Min. M ax @ l„ P age No. Units (m A) mw 50 8 m W /cm 2 20 12 mW 50 8 m W /cm ' 20 12 mW 50 16 (Deg.) S E 1450-001 S E1450-002
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E1450-002
SE1450-003
SE1450-004
SE1470-001
E1450-002L
SE1450-003L
SE1450-004L
SE1470-002L
E1470-003L
E1470-004L
E5450
E1470
1450001
345-500
SE5470
E1450
u 880 e
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H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
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1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
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TIL149
Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Text: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55
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GQ133Ã
CLA60.
C-101-C
CLA60AA
C-101-B
CLA60AB
C-101-A
CLA65.
C-102
CLA65AA
TIL149
HOA708-1
S-180-a55
SPX2862
HS-230-40W
HOA708
SLOTTED OPTICAL SWITCH
HOA1160
h0a2001
A11W
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teradyne A360
Abstract: No abstract text available
Text: Reliability Summary of SEC450 GaAs:Si IRED Chip Long-Term Operating Life Study Figure 1 IRED CHIP DEGRADATION STUDIES Honeywell is engaged in an ongoing study of degradation of radiant output over time as a function of temperature for the SEC450 GaAs IRED gallium
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SEC450
SEP8505
SEP8506
SEP8507
teradyne A360
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HOA1397-002
Abstract: pic with ir sensor A13970
Text: HOA1397 Reflective Sensor DESCRIPTION The HOA1397 series consists of an infrared emitting diode and an NPN silicon phototransistor HOA1397-001, -002 or photodarlington (HOA1397-031, 032) encased side-by-side on parallel axes in a miniature black thermoplastic housing. The
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HOA1397
HOA1397-001,
HOA1397-031,
SEP8507
SDP8407.
HOA1397-002
pic with ir sensor
A13970
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teradyne A360
Abstract: No abstract text available
Text: Reliability Reliability Summary of SEC450 GaAs:Si IRED Chip Long-Term Operating Life Study Figure 1 IRED CHIP DEGRADATION STUDIES Honeywell is engaged In an ongoing study of degradation of radiant output over time as a function of temperature for the SEC450 GaAs IRED gallium
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OCR Scan
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PDF
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SEC450
SE1450
SE1470
SE3453/5453
SE3455/5455
SE34705470
SEP8505
SEP8705
SEP8506
teradyne A360
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