G30TC10M
Abstract: g30t
Text: Schot t kyBar r i erDi ode T wi n •外観図 SG30TC10M OUTLI NE Package：FTO220G pi n） （3 100V30A （例） ロット記号 Date code t ：mm Uni 4.5 10.０ 品名略号 Type No. 極性 Polarity 0000 G30TC10M ３.45 煙Tj＝１７ ５℃ 煙フルモールド
|
Original
|
G30TC10M
G30TC10M
g30t
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SG30TC10M •特性図 CHARACTERI STI C DI AGRAMS 順方向特性 順電力損失曲線 せん頭サージ順電流耐量 Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability Tc＝１７５℃ （MAX） Tc＝１７５℃ （TYP）
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SG30TC10M CHARACTERI STI C DI AGRAMS 順方向特性 順電力損失曲線 せん頭サージ順電流耐量 Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability Tc＝１７５℃ （MAX） Tc＝１７５℃ （TYP） Tc＝２５℃
|
Original
|
|
PDF
|
7555-T
Abstract: M1FM3
Text: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE S G 30 T C 1 OM 100V 30A Feature • Tj=i5 rc • Tj=150°C • 7 J IÆ -J U K • Full M olded • (glR=40pA • Low lR=40pA • j r iiìè s b c u c < u • Resistance for thermal run-away •« » W Œ 2 k V S S I
|
OCR Scan
|
VR-50V
|
PDF
|
SG30TC1OM
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE S G 30T C 1 OM 100V 30A Feature • Tj=175°C • Tj=175°C • Full Molded • I5 I r=40|j A • Lo w Ir=40| j A • • Resistance for thermal run-away • Dielectric Strength 2kV U 1C < 11 • ig iU ÎŒ 2kV«IŒ
|
OCR Scan
|
SG30TC1OM
FTO-220G
50Hzr
CJ533-1
SG30TC1OM
|
PDF
|
SG30TC10M
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm SG30TC1OM o u t lin e Unit : mm Package : FTO-220G o -y H d ^ W 100V 30A 4.5 Feature • Tj=175°C • • • Tj=175°C • Full Molded K • Low Ir=40|jA • Resistance for thermal run-away Ir = 4 0 | j A Main Use
|
OCR Scan
|
SG30TC1OM
FTO-220G
J533-1)
SG30TC10M
50IIz
J533-1
SG30TC10M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G S G 3 0 T C 1 OM Unit : mm Weight 1.54g Typ nyHB-ë-(M) 10 0 V 3 0 A 4.5 Feature ' Tj=150°C > Tj=150°C > 3 7 J L Æ -J L / K ' Full Molded » 1 Low Ir=40|jA 1 Resistance for thermal run-away
|
OCR Scan
|
FTO-220G
SG30TC10M
50IIz
J533-1
|
PDF
|
