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Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SGN21C320I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 55dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Linear Gain : 18.5dB(typ.) @ f=2.14GHz Proven Reliability Only For peak stage of Doherty amplifier	Original	SGN21C320I2D 55dBm 14GHz 25deg 41dBm,	PDF

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Untitled

Abstract: No abstract text available
Text: SGN21C320I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 55dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Linear Gain : 18.5dB(typ.) @ f=2.14GHz Proven Reliability Only For peak stage of Doherty amplifier

Original

SGN21C320I2D 55dBm 14GHz 25deg 41dBm,

PDF