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Toshiba America Electronic Components 2SK2543 SILICON N CHANNEL MOS TYPE (PI-MOSV) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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ComSIT USA	2SK2543		40			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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Untitled Abstract: No abstract text available Text: SK2543 THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRONIC AND ITS SUBSIDIARIES. POSITRONIC BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION	OCR Scan	PDF	SK2543 CBD17I2M 2S5000
Untitled Abstract: No abstract text available Text: SK2543 THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRONICAND ITS SUBSIDIARIES. POSITRONIC BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION	OCR Scan	PDF	SK2543 CBDM2M2S5000
Untitled Abstract: No abstract text available Text: SK2543 DATE REV 11-2B A 07 POSITRONIC INDUSTRIES BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK, POSITRONIC INDUSTRIES ASSUMES NO RESPONSIBILITT FOR RESULTS OBTAINED OR DAMAGES	OCR Scan	PDF	SK2543 11-2B 2B19a CBD17Ï 2M2S5000
2SK2543 Abstract: No abstract text available Text: TOSHIBA SK2543 SILICON N CHANNEL MOS TYPE tt-MOSV SWITCHING REGULATOR APPLICATIONS 10 ±0.3 r Low Drain-Source ON Resistance : Rd S (ON) = 0.750 (Typ.) High Forward Transfer Admittance : \|Yfs\| = 7.0S (Typ.) Low Leakage Current : iDgg^lOO/^A (Max.) (V]}g = 500V)	OCR Scan	PDF	2SK2543 2SK2543