SMA540B Search Results

SMA540B Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SMA540B		STMicroelectronics	ACTIVE BIASED RF TRANSISTOR		Original	PDF
SMA540BTR		STMicroelectronics	Active Biased RF Transistor		Original	PDF

SMA540B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SOT323-4L Abstract: SMA540B SMA540BTR Text: SMA540B Active Biased RF Transistor PRELIMINARY DATA • HIGH GAIN LOW NOISE AMPLIFIERS Gms = 19 dB at 1.8 GHz • CURRENT EASY ADJUSTABLE BY AN EXTERNAL RESISTOR • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V • TRANSITION FREQUENCY 42 GHz	Original	PDF	SMA540B OT323-4L OT323-4L SMA540BTR SMA540B SOT323-4L SMA540BTR
540B Abstract: AN1739 SMA540B Text: AN1739 APPLICATION NOTE AN LNA OPTIMIZED AT 2.45 GHz USING THE Si MMIC SMA540B R. Mazzurco, N. Micalizzi, G. Privitera Table 1: Data for Bleutooth/WLAN Applications f = 2.450 GHz Parameters Value Unit Vcc 3.3 V Icc 5 mA 2.2 dB Noise Figure Gain 13.9 dB RLin	Original	PDF	AN1739 SMA540B SMA540B 540B AN1739
Untitled Abstract: No abstract text available Text: SMA540B Active Biased RF Transistor PRELIMINARY DATA • HIGH GAIN LOW NOISE AMPLIFIERS Gms = 19 dB at 1.8 GHz • CURRENT EASY ADJUSTABLE BY AN EXTERNAL RESISTOR • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V • TRANSITION FREQUENCY 42 GHz	Original	PDF	SMA540B OT343 OT343
npn, transistor, sc 107 b Abstract: SMA540B SMA540BTR Text: SMA540B Active Biased RF Transistor PRELIMINARY DATA • HIGH GAIN LOW NOISE AMPLIFIERS Gms = 19 dB at 1.8 GHz • CURRENT EASY ADJUSTABLE BY AN EXTERNAL RESISTOR • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 1.4-3.3 V • TRANSITION FREQUENCY 42 GHz	Original	PDF	SMA540B OT323-4L OT323-4L SMA540BTR SMA540B SMA54ation npn, transistor, sc 107 b SMA540BTR
T28000 Abstract: 540B AN1739 SMA540B Text: AN1739 APPLICATION NOTE AN LNA OPTIMIZED AT 2.45 GHz USING THE Si MMIC SMA540B R. Mazzurco, N. Micalizzi, G. Privitera Table 1: Data for Bleutooth/WLAN Applications f = 2.450 GHz Parameters Value Unit Vcc 3.3 V Icc 5 mA 2.2 dB Noise Figure Gain 13.9 dB RLin	Original	PDF	AN1739 SMA540B SMA540B T28000 540B AN1739
MRF947T1 equivalent Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi	Original	PDF	2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L