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    Abstract: No abstract text available
    Text: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		ST2318SRG ST2318SRG OT-23 OT-23 PDF

    N mosfet sot-23

    Abstract: sot-23 MARKING CODE 23A marking sot-23
    Text: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		ST2318SRG ST2318SRG OT-23 OT-23 N mosfet sot-23 sot-23 MARKING CODE 23A marking sot-23 PDF