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Catalog Datasheet	MFG & Type	Document Tags	PDF
ST2341M Abstract: No abstract text available Text: M ST2341 ST2341M P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2341M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	ST2341M ST2341M OT-23-3L -20V/-2 -20V/-CS ST2341	PDF
p channel mosfet 10a 20v Abstract: No abstract text available Text: ST2341 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	ST2341 ST2341 OT-23-3L -20V/-3 36m-ohm -20V/-2 45m-ohm 55m-ohm p channel mosfet 10a 20v	PDF
Untitled Abstract: No abstract text available Text: ST2341SRG P Channel Enhancement Mode MOSFET -3.2A DESCRIPTION ST2341SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for	Original	ST2341SRG ST2341SRG OT-23 -20V/-3 -20V/-2	PDF
Untitled Abstract: No abstract text available Text: ST2341S23RG P Channel Enhancement Mode MOSFET -5.3A DESCRIPTION ST2341S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	ST2341S23RG ST2341S23RG OT-23-3L -20V/-3 30m-ohm -20V/-2 ST2341SRG3RG	PDF