Untitled
Abstract: No abstract text available
Text: STN8822A Dual N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN8822A is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly
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STN8822A
STN8822A
25m-ohm
42m-ohm
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Untitled
Abstract: No abstract text available
Text: STN8822 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN8822 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly
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Original
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STN8822
STN8822
20m-ohm
24m-ohm
32m-ohm
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