Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    STP19N06LFI Search Results

    STP19N06LFI Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP19N06LFI STMicroelectronics N-Channel Enhancement Mode Low Threshold Power MOS Transistor Original PDF

    STP19N06LFI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STP19N06L

    Abstract: STP19N06LFI
    Text: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		STP19N06L STP19N06LFI 100oC O-220 ISOWATT220 STP19N06L STP19N06LFI PDF

    0119A

    Abstract: STP19N06L STP19N06LFI c19a
    Text: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		STP19N06L STP19N06LFI 100oC O-220 ISOWATT220 0119A STP19N06L STP19N06LFI c19a PDF

    Untitled

    Abstract: No abstract text available
    Text: * 5 SGS-THOMSON ¡[LKgraMOeS 7 STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E STP19N 06L S TP19N06LFI V dss RDS on Id 60 V 60 V < 0.1 a < 0.1 a 19 A 13 A • TYPICAL RDS(on) = 0.085 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		STP19N06L STP19N06LFI STP19N TP19N06LFI O-220 ISOWATT22Q PDF