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    STP50N Search Results

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    STP50N Price and Stock

    STMicroelectronics STP50N60DM6

    MOSFET N-CH 600V 36A TO220
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    DigiKey STP50N60DM6 Tube 726 1
    • 1 $6.6
    • 10 $6.6
    • 100 $6.6
    • 1000 $2.65538
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    Avnet Americas STP50N60DM6 Tube 14 Weeks 1,000
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    • 1000 $2.65538
    • 10000 $2.49918
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    Mouser Electronics STP50N60DM6 459
    • 1 $5.62
    • 10 $4.77
    • 100 $2.96
    • 1000 $2.65
    • 10000 $2.61
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    Newark STP50N60DM6 Bulk 50 1
    • 1 $6.17
    • 10 $5.26
    • 100 $4.35
    • 1000 $3.92
    • 10000 $3.92
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    STMicroelectronics STP50N60DM6 459 1
    • 1 $5.51
    • 10 $4.68
    • 100 $2.9
    • 1000 $2.61
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    TME STP50N60DM6 1
    • 1 $7.08
    • 10 $6.38
    • 100 $5.06
    • 1000 $4.72
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    Avnet Silica STP50N60DM6 550 15 Weeks 50
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    STMicroelectronics STP50NE10

    MOSFET N-CH 100V 50A TO220AB
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    DigiKey STP50NE10 Tube 1,000
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    • 1000 $1.22126
    • 10000 $1.22126
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    STMicroelectronics STP50NF25

    MOSFET N-CH 250V 45A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP50NF25 Tube 1
    • 1 $3.5
    • 10 $3.5
    • 100 $3.5
    • 1000 $1.20274
    • 10000 $1.12975
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    Avnet Americas STP50NF25 Tube 13 Weeks 1,000
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    • 1000 $1.12975
    • 10000 $1.06329
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    Mouser Electronics STP50NF25
    • 1 $3.14
    • 10 $1.64
    • 100 $1.47
    • 1000 $1.14
    • 10000 $1.11
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    Newark STP50NF25 Bulk 1,000
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    STMicroelectronics STP50NF25 1
    • 1 $3.08
    • 10 $1.61
    • 100 $1.44
    • 1000 $1.21
    • 10000 $1.21
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    TME STP50NF25 1
    • 1 $2.61
    • 10 $2.34
    • 100 $1.86
    • 1000 $1.73
    • 10000 $1.73
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    ComSIT USA STP50NF25 92
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    Avnet Silica STP50NF25 14 Weeks 50
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    EBV Elektronik STP50NF25 800 14 Weeks 50
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    Win Source Electronics STP50NF25 8,232
    • 1 -
    • 10 $6.1845
    • 100 $4.788
    • 1000 $4.788
    • 10000 $4.788
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    STMicroelectronics STP50NE08

    MOSFET N-CH 80V 50A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP50NE08 Tube 1,000
    • 1 -
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    • 100 -
    • 1000 $1.01333
    • 10000 $1.01333
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    STMicroelectronics STP50N65DM6

    MOSFET N-CH 650V 33A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STP50N65DM6 Tube 1,000
    • 1 -
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    • 1000 $3.72238
    • 10000 $3.72238
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    Avnet Americas STP50N65DM6 Tube 14 Weeks 1,000
    • 1 -
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    • 100 -
    • 1000 $3.72238
    • 10000 $3.50341
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    Mouser Electronics STP50N65DM6 948
    • 1 $7.15
    • 10 $6.13
    • 100 $5.11
    • 1000 $3.72
    • 10000 $3.72
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    STMicroelectronics STP50N65DM6 948 1
    • 1 $7.01
    • 10 $6.01
    • 100 $5.01
    • 1000 $4.42
    • 10000 $4.42
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    TME STP50N65DM6 1
    • 1 $7.88
    • 10 $7.09
    • 100 $5.63
    • 1000 $5.25
    • 10000 $5.25
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    Avnet Silica STP50N65DM6 15 Weeks 50
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    Find more STP50N price and stock on Findchips.com

    STP50N Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP50N05L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP50N05LFI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP50N06 STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STP50N06 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STP50N06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP50N06 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STP50N06FI STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STP50N06FI STMicroelectronics N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Original PDF
    STP50N06FI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP50N06FI Unknown Shortform Datasheet & Cross References Data Short Form PDF
    STP50N06L STMicroelectronics N-Channel Enhancement Mode Low Threshold Power MOS Transistor Original PDF
    STP50N06L STMicroelectronics N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Original PDF
    STP50N06L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP50N06LFI STMicroelectronics N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR Original PDF
    STP50N06LFI STMicroelectronics N-Channel Enhancement Mode Low Threshold Power MOS Transistor Original PDF
    STP50N06LFI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP50NE08 STMicroelectronics N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE PO Original PDF
    STP50NE08 STMicroelectronics N - CHANNEL ENHANCEMENT MODE - SINGLE FEATURE SIZE - POWER MOSFET Original PDF
    STP50NE08 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP50NE10 STMicroelectronics N-channel 100V - 0.021O - 50A TO-220 STripFET Power MOSFET Original PDF

    STP50N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C5027

    Abstract: C3519 STP50N06L STP50N06LFI K 286
    Text: STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP50N06L STP50N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.024 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP50N06L STP50N06LFI 100oC 175oC O-220 C5027 C3519 STP50N06L STP50N06LFI K 286

    C5027

    Abstract: STP50N06L STP50N06LFI
    Text: STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP50N06L STP50N06LFI VDSS R DS on ID 60 V 60 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.024 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STP50N06L STP50N06LFI 100oC 175oC O-220 C5027 STP50N06L STP50N06LFI

    SD-50 diode

    Abstract: STP50NE10L
    Text: STP50NE10L  N - CHANNEL 100V - 0.020Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10L • ■ ■ ■ ■ V DSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10L O-220 SD-50 diode STP50NE10L

    p50ne1

    Abstract: No abstract text available
    Text: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A ) s ( t c u d o ) r s ( P Description t c e t u e d l o o r s Internal schematic diagram P b e O t e l ) o s ( s t


    Original     		PDF STP50NE10 O-220 p50ne1

    50NF25

    Abstract: mosfet 45a 200v JESD97 STB50NF25 STP50NF25
    Text: STB50NF25 STP50NF25 N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 Low gate charge STripFET Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID Pw STP50NF25 250V <0.069Ω 45A 160W STB50NF25 250V <0.069Ω 45A 160W • 100% avalanche tested ■


    Original     		PDF STB50NF25 STP50NF25 O-220 50NF25 mosfet 45a 200v JESD97 STB50NF25 STP50NF25

    STP50NE10L

    Abstract: GS 393
    Text: STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10L • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10L O-220 STP50NE10L GS 393

    P50NE08

    Abstract: p50ne P50ne0 K 3850 N Mosfet Power st microelectronics MOSFET automotive k 3850
    Text: STP50NE08 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST P50NE08 • ■ ■ ■ ■ V DSS R DS on ID 80 V <0.024 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE08 P50NE08 O-220 P50NE08 p50ne P50ne0 K 3850 N Mosfet Power st microelectronics MOSFET automotive k 3850

    STP50N06L

    Abstract: STP50N06LFI 3519A
    Text: STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP50N06L STP50N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.024 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP50N06L STP50N06LFI 100oC STP50N06L STP50N06LFI 3519A

    STP50NE10L

    Abstract: No abstract text available
    Text: STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE10L • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10L O-220 STP50NE10L

    p50ne1

    Abstract: P50NE10 p50ne STP50NE10
    Text: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization


    Original     		PDF STP50NE10 O-220 O-220 STP50NE10 P50Nerein p50ne1 P50NE10 p50ne

    STP50NE10L

    Abstract: No abstract text available
    Text: STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10L VDSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED


    Original     		PDF STP50NE10L O-220 STP50NE10L

    STP50NE10L

    Abstract: No abstract text available
    Text: STP50NE10L N - CHANNEL 100V - 0.020Ω - 50A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE10L • ■ ■ ■ ■ VDSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10L O-220 STP50NE10L

    STP50N05L

    Abstract: STP50N05LFI stp50n05 5027A
    Text: STP50N05L STP50N05LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP50N05L STP50N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.024 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP50N05L STP50N05LFI 100oC STP50N05L STP50N05LFI stp50n05 5027A

    STP50NE10

    Abstract: No abstract text available
    Text: STP50NE10  N - CHANNEL 100V - 0.021Ω - 50A TO-220 STripFET POWER MOSFET TYPE STP50NE10 • ■ ■ ■ ■ V DSS R DS on ID 100 V <0.027 Ω 50 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10 O-220 STP50NE10

    C5027

    Abstract: C3519 STP50N06 STP50N06FI
    Text: STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP50N06 STP50N06FI 100oC 175oC O-220 ISOWATT220 C5027 C3519 STP50N06 STP50N06FI

    STP50NE10

    Abstract: No abstract text available
    Text: STP50NE10  N - CHANNEL 100V - 0.021Ω - 50A - D2PAK STripFET POWER MOSFET TYPE STP50NE10 • ■ ■ ■ ■ V DSS R DS on ID 100 V <0.027 Ω 50 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC


    Original     		PDF STP50NE10 O-220 STP50NE10

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 2 3 7 0D4L50L4 f l t. 3 •SGTH SGS-THOMSON ¡LiOT s«S ¡5 7 STP50N06L STP50N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP 50N 06L STP50N 06LFI V dss R d s ( o ii Id 60 V 60 V < 0 .0 2 8 a < 0 .0 2 8 Q 50 A 2 1 IK ■ TYPICAL RDS(on) = 0.024 Q


    OCR Scan     		PDF 0D4L50L4 STP50N06L STP50N06LFI STP50N 06LFI QCmb510 STP50N06L/FI

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STP50NE08 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE STP50NE08 V d ss R d S ( o ii ) Id 80 V < 0 .0 2 4 Q. 50 A . TYPICAL RDS(on) =0.020 EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED


    OCR Scan     		PDF STP50NE08

    Untitled

    Abstract: No abstract text available
    Text: STP50NE10L N - CHANNEL 100V - 0.020Q - 50A - TO-220 _STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE1OL Voss R D S o n Id 100 V <0.025 Î2 50 A . TYPICAL R d s (oii) = 0.020 Q m EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED . LOW GATE CHARGE AT 100 °C


    OCR Scan     		PDF STP50NE10L O-220 STP50NE1OL

    Untitled

    Abstract: No abstract text available
    Text: 7^2^237 G G 4 b 4 cî 7 ÛT3 «SSTH STP50N06 STP50N06FI SGS-THOMSON id * ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP50N06 STP50N06FI . . • . . . . . V dss RDS on Id 60 V 60 V < 0.028 n < 0.028 Q 50 A 27 A TYPICAL Rds(oh) = 0.022 £2


    OCR Scan     		PDF STP50N06 STP50N06FI 004b5G3 STP50N06/FI

    Untitled

    Abstract: No abstract text available
    Text: STP50NE10 N -CHANNEL 100V -0.021 £2- 50A TO-220 STripFET POWER MOSFET TYPE S T P 50 N E 1 0 . . . . . V dss 100 V R d S o Id ii < 0 .0 2 7 Q. 50 A TYPICAL R D S (on) = 0.021 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C


    OCR Scan     		PDF STP50NE10 O-220

    ym 238

    Abstract: No abstract text available
    Text: STP50NE10 N - CHANNEL 100V - 0.021Q - 50A - D2PAK STripFET POWER MOSFET TYPE S TP 50N E10 V dss RDS on Id 1 00 V <0.027 Q 50 A TYPICAL Ftos(on) = 0.021 Q m EXCEPTIONALdv/dt CAPABILITY . . 100% AVALANCHE TESTED . LOW GATE CHARGE AT 100 °C . APPLICATION ORIENTED


    OCR Scan     		PDF STP50NE10 ym 238

    Untitled

    Abstract: No abstract text available
    Text: STP50NE10 N - CHANNEL 100V - 0.021 Q - 50A - TO-220 STripFET POWER MOSFET PRELIMINARY DATA TYPE STP50NE10 Voss R D S o n Id 100 V < 0 .0 2 7 Î2 50 A . TYPICAL R d s ( o ii ) = 0.021 Q m EXCEPTIONAL dv/dt CAPABILITY . . . 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C


    OCR Scan     		PDF STP50NE10 O-220

    Untitled

    Abstract: No abstract text available
    Text: STP50NE10L N - CHANNEL 100V - 0.020ft - 50A - TO-220 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE S TP 50N E 10L . . . . . V dss R dS oii Id 100 V <0.025 a 50 A TYPICAL RDS(on) = 0.020 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C


    OCR Scan     		PDF STP50NE10L 020ft O-220