STRH100N10FSY3 Search Results

STRH100N10FSY3 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
STRH100N10FSY3 Abstract: STRH100N10FSY1 Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight	Original	STRH100N10FSY3 O-254AA 100kRad 34Mev/cm STRH100N10FSY3 STRH100N10FSY1	PDF
Untitled Abstract: No abstract text available Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N10FSY3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization	Original	STRH100N10FSY3 O-254AA O-254AA	PDF
Untitled Abstract: No abstract text available Text: STRH100N10FSY1 STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N10FSY1 100 V STRH100N10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH100N10FSY1 STRH100N10FSY3 O-254AA 34Mev/cm O-254AA	PDF
STRH100N10FSY1 Abstract: STRH100N10FSY3 STRH100N10 JESD97 Text: STRH100N10FSY1 STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N10FSY1 100 V STRH100N10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH100N10FSY1 STRH100N10FSY3 O-254AA 34Mev/cm STRH100N10FSY1 STRH100N10FSY3 STRH100N10 JESD97	PDF
st 72a Abstract: No abstract text available Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH100N10FSY3 O-254AA 100kRad 34Mev/cm O-254AA st 72a	PDF
Untitled Abstract: No abstract text available Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened	Original	STRH100N10 O-254AA O-254AA	PDF