Untitled
Abstract: No abstract text available
Text: SBM27PT CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 70 - 100 Volts CURRENT 2.0 Amperes SBM210PT FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * For surface mounted applications
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Original
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SBM27PT
SBM210PT
260oC/10
150oC
SBM29PT
210PT
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SBM210GP
Abstract: SBM27GP SBM29GP
Text: SBM27GP CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 70 - 100 Volts CURRENT 2.0 Amperes SBM210GP FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * For surface mounted applications
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Original
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SBM27GP
SBM210GP
260oC/10
150oC
SBM29GP
210GP
SBM210GP
SBM27GP
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PDF
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s10p40
Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge
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Original
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OD-123
S30S20PT
S30S30PT
S30S35PT
s10p40
C53l
SS34 sma
SS54 smb
K4 SOD
SK24 equivalent
SK34 smc
diode s14L
SSM14APT
SSM5819SLPT
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PDF
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s10p40
Abstract: SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Current Voltage Surge Current Outline @ 25°C TA @ 25°C TA @ 8.3mS NO. IR IFM VFM IFM Surge Adc APK
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Original
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OD-123
S15P20
S15P30
S15P40
s10p40
SCM54
SCM35
SBM19
SCM84
SSM19
SCM32
Ssm34
SBM14
SSM35
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PDF
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EQKR8-90
Abstract: CO 824
Text: n / A - C O n INC/ ANZA C D I V 51E D Afocm • SbM2177 0003537 O ^ ■ ANZ T - 0 ° \ ANZAC RF & CELLULAR COMPONENTS l/Q Modulators +10 dBm CARRIER LEVEL, up to +1 dBm l/Q SIGNAL LEVEL MODEL NO. EQKR8-45 EQKR8-70 EQKR8-90 EQKR8-100 EQKR8-130 EQKR8-40W EQKR8-70W
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OCR Scan
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SbM2177
EQKR8-45
EQKR8-70
EQKR8-90
EQKR8-100
EQKR8-130
EQKR8-40W
EQKR8-70W
EQKR8-120W
CO 824
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PDF
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AT-201
Abstract: 0to-10dB
Text: M /A -C o r i/ L.'ìE J> MICROELECTRONICS • SbM21fl3 Düüüflci3 bbb « M A C O Voltage Variable Absorptive Attenuator DC-5 GHz AT-201 Dimensions in are in mm. ■ Miniature Ceramic Package ■ Fast Switching Speed, 4 ns Typical ■ Ultra Low DC Power Consumption
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OCR Scan
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SbM21fl3
AT-201
AT-201
0to-10dB
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PDF
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DPDT SWITCHES
Abstract: dpdt rf switch
Text: Ap/K M/A-COM ADV SEMICONDUCTOR 27E D SbM21Ö3 G QD D 30 S Ô MA4GM400C-500 GaAs DPDT RF Switch Features • CASCADABLE ■ LOW INSERTION LOSS ■ MULTIMODE OPERATION THD OF -6 0 dBc @ 10 KHz OBTAINABLE IN ViC, V2C MODE Description The MA4GM400C is a GaAs MMIC MESFET chip configured as a
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OCR Scan
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SbM21
MA4GM400C-500
MA4GM400C
DPDT SWITCHES
dpdt rf switch
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PDF
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SW-328
Abstract: SW328 sso8
Text: n/A-COM/ MICROELECTRONICS b^E » • SbM21fl3 ODDOtilS bTS HNACO GaAs SPDT Switch DC-3 GHz SW-328 Features SSO-8 Very Low Power Consumption: 50 |i.W Low Insertion Loss: 0.5 dB High Isolation: 20 dB up to 3 GHz Very High Intercept Point: 46 dBm IP 3 Nanosecond Switching Speed
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OCR Scan
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SbM21fl3
SW-328
SW-328
SW328
sso8
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PDF
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Untitled
Abstract: No abstract text available
Text: fl/A-COM ADV S E M I C O N D U C T O R 27E D • SbM21fl3 O Q O O Bi b T New Products f iO k PART NUMBER * T DESCRIPTION/FEATURES S h l i NOMINAL* ELECTRICAL CHARACTERISTICS MA4GM202MD-2016S SP2T 5 MHz - 2 GHz Matched W/CMOS Driver Single Bias + 5 Volts 12 Pin Flat Pack - ODS-2016
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OCR Scan
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SbM21fl3
MA4GM202MD-2016S
ODS-2016
ODS-2014
ODS-2039
ODS-2019
ODS-2009
Reflect085
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PDF
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Untitled
Abstract: No abstract text available
Text: M / A - C O M ADV S E M I C O N D U C T O R S7E D WÈ 5 b 4 H lö 3 00G0375 7 • ymm T H H - i B- O MA4GM541 4-B it GaAs M M IC/Hybrid Digital Attenuator 3, 6 ,1 2 , 2 4 dB Bits) Features ■ BANDWIDTH .25 - 2 GHz ■ INTEGRAL CMOS DRIVER lDC<1<0 mA ■ TTL COMPATIBLE DRIVE
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OCR Scan
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00G0375
MA4GM541
MA4GM541
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PDF
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MA4GM316
Abstract: No abstract text available
Text: M/A-COM ADV SEMICONDUCTOR Apt< S7 E D Sk42163 0D0034b h r ^ /3 - o j MA4GM316A-500 MA4GM316A SERIES GaAs M M IC D C -2 GHz 6 0 dB Variable Attenuator 2000 2010 2012 2100 Features • SINGLE* OR DUAL DC BIAS CONTROL ■ EASILY CASCADABLE ■ 60 dB ATTENUATION RANGE
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OCR Scan
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Sk42163
0D0034b
MA4GM316A-500
MA4GM316A
MA4GM316
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PDF
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IC 555 pin DIAGRAM and truth table
Abstract: No abstract text available
Text: n/A-COM ADV SEMICONDUCTOR SbMSlßB 0 0 Q D 2 a a 7 57E D T-51 It MA4GM204LD-2019 GaAs M M IC DC - 2 GHz SP4T Switch W ith Driver Features • BROAD BANDWIDTH DC - 2 GHz ■ 100 NANOSECOND SWITCHING ■ LOW LOSS 2 dB @ 1 GHz ■ BIPOLAR DRIVER, TTL COMPATIBLE
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OCR Scan
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MA4GM204LD-2019
MA4GM204LD-2019
QD2019)
IC 555 pin DIAGRAM and truth table
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PDF
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DG1500
Abstract: No abstract text available
Text: M/ AA -VCO 11/ .' M Apa< MV SEMICONDUCTOR 57E D • S t M B l ô 3 0D0 0 23 b T ■ =#T I r .5 /- /; MA4GM202MF-500 MA4GM202MF SERIES 2012 2100 GaAs M M IC D C -4 GHz SPOT Absorptive Switch Features ■ INDEPENDENT BIAS CONTROL FOR ALL GATES ■ BROAD BANDWIDTH: DC - 4 GHz
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OCR Scan
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MA4GM202MF-500
MA4GM202MF
DG1500
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PDF
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Untitled
Abstract: No abstract text available
Text: M / A - C Ô M ADV S E M I C O N D U C T O R 5?E D 5b421fl3 D0D D 21 4 0 rs iii MA4GM201MC-500* GaAs M M IC DC -4 GHz SPST Switch Features • BROAD BANDWIDTH ■ FAST SWITCHING 3 NANOSECONDS ■ VERY LOW POWER CONSUMPTION (FET BASED TECHNOLOGY) ^100 ¡xA
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OCR Scan
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5b421fl3
MA4GM201MC-500*
C-500
MA4GM201MC-500
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PDF
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