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Suzhou Novosense Microelectronics Co Ltd NSI1305M25-DSWR 250MV INPUT, 16BIT/78KSPS, REINF
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DigiKey	NSI1305M25-DSWR	Cut Tape	1,000		1	1 $4.76 10 $3.165 100 $2.2871 1000 $1.92412 10000 $1.92412	Buy Now
	NSI1305M25-DSWR	Digi-Reel	1,000		1	1 $4.76 10 $3.165 100 $2.2871 1000 $1.92412 10000 $1.92412	Buy Now
	NSI1305M25-DSWR	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.8481 10000 $1.8481	Buy Now
Vishay Siliconix SI1305DL-T1-E3 MOSFET P-CH 8V 860MA SC70-3
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DigiKey	SI1305DL-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.12696	Buy Now
Vishay Siliconix SI1305DL-T1-GE3 MOSFET P-CH 8V 860MA SC70-3
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DigiKey	SI1305DL-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SI1305EDL-T1-E3 MOSFET P-CH 8V 860MA SC70-3
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DigiKey	SI1305EDL-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.15228	Buy Now
Vishay Intertechnologies SI1305DL-T1-E3
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Bristol Electronics	SI1305DL-T1-E3		15,607			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SI1305 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
Si1305DL	Vishay Intertechnology	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
SI1305DL	Vishay Siliconix	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
SI1305DL-DS	Vishay Telefunken	DS-Spice Model for Si1305DL	Original	PDF
Si1305DL SPICE Device Model	Vishay	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
SI1305DL-T1	Vishay Intertechnology	P-Channel 1.8-V (G-S) MOSFET	Original	PDF
SI1305DL-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 860MA SOT323-3	Original	PDF
SI1305DL-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 860MA SC-70-3	Original	PDF
SI1305EDL-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 860MA SOT323-3	Original	PDF
SI1305EDL-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 860MA SOT323-3	Original	PDF

SI1305 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
P-Channel 1.8-V G-S MOSFET sot-323 Abstract: No abstract text available Text: Si1305EDL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V ± 0.92 0.380 at VGS = - 2.5 V ± 0.79 0.530 at VGS = - 1.8 V ± 0.67 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si1305EDL 2002/95/EC OT-323 SC-70 Si1305EDL-T1-E3 Si1305EDL-T1-GE3 18-Jul-08 P-Channel 1.8-V G-S MOSFET sot-323
Si1305DL Abstract: No abstract text available Text: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code	Original	PDF	Si1305DL OT-323 SC-70 S-63638--Rev. 01-Nov-99
F MARKING 6PIN Abstract: No abstract text available Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si1305DL 2002/95/EC OT-323 SC-70 Si1305DL-T1-E3 Si1305DL-T1-GE3 11-Mar-11 F MARKING 6PIN
9713 Abstract: AN609 Si1305DL Text: Si1305DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si1305DL AN609 22-Mar-07 9713
Untitled Abstract: No abstract text available Text: SPICE Device Model Si1305EDL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1305EDL 18-Jul-08
Si1305DL Abstract: No abstract text available Text: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1305DL 18-Jul-08
Si1305BDL Abstract: No abstract text available Text: SPICE Device Model Si1305BDL Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1305BDL 18-Jul-08
Si1305DL Abstract: No abstract text available Text: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1305DL S-50151Rev. 07-Feb-05
P-Channel 1.8-V G-S MOSFET sot-323 Abstract: SI1305DL-T1 SI1305DL Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.280 @ VGS = −4.5 V −0.92 0.380 @ VGS = −2.5 V −0.79 0.530 @ VGS = −1.8 V −0.67 D TrenchFETr Power MOSFET: 1.8 V Rated RoHS COMPLIANT	Original	PDF	Si1305DL OT-323 SC-70 Si1305DL--T1 Si1305DL--T1--E3 S-51075--Rev. 13-Jun-05 P-Channel 1.8-V G-S MOSFET sot-323 SI1305DL-T1
Si1305DL Abstract: vishay MOSFET code marking Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si1305DL 2002/95/EC OT-323 SC-70 Si1305DL-T1-E3 Si1305DL-T1-GE3 11-Mar-11 vishay MOSFET code marking
P-Channel 1.8-V G-S MOSFET sot-323 Abstract: Si1305DL Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = - 4.5 V - 0.92 0.380 @ VGS = - 2.5 V - 0.79 0.530 @ VGS = - 1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability	Original	PDF	Si1305DL OT-323 SC-70 S-03721--Rev. 07-Apr-03 P-Channel 1.8-V G-S MOSFET sot-323
Si1305DL Abstract: No abstract text available Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si1305DL 2002/95/EC OT-323 SC-70 Si1305DL-T1-E3 Si1305DL-T1-GE3 18-Jul-08
DATASHEET 5609 Abstract: transistor 5609 8309 DATASHEET 5609 transistor 5609 transistor AN609 Text: Si1305EDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si1305EDL AN609 08-May-07 DATASHEET 5609 transistor 5609 8309 DATASHEET 5609 transistor 5609 transistor
Si1305DL Abstract: ams330 Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code	Original	PDF	Si1305EDL OT-323 SC-70 18-Jul-08 Si1305DL ams330

Si1305DL Abstract: No abstract text available Text: SPICE Device Model Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1305DL 24-Apr-04
Untitled Abstract: No abstract text available Text: Si1305 Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.280 @ VGS = -4.5 V -0.92 0.380 @ VGS = -2.5 V - 0.79 0.530 @ VGS = -1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code 3 Lot Traceability and Date Code	Original	PDF	Si1305 OT-323 SC-70 S-22380--Rev. 30-Dec-02
Si1305DL Abstract: No abstract text available Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si1305DL 2002/95/EC OT-323 SC-70 Si1305DL-T1-E3 Si1305DL-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: Si1305DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.280 at VGS = - 4.5 V - 0.92 0.380 at VGS = - 2.5 V - 0.79 0.530 at VGS = - 1.8 V - 0.67 • TrenchFET Power MOSFET: 1.8 V • Material categorization:	Original	PDF	Si1305DL OT-323 SC-70 Si1305DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
4802 Abstract: AN609 174542 Text: Si1305BDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si1305BDL AN609 25-Mar-08 4802 174542
MARKING CODE LB Abstract: SI1305DL Text: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code	Original	PDF	Si1305DL OT-323 SC-70 S-63638--Rev. 01-Nov-99 MARKING CODE LB
99399 Abstract: SI1305DL Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code	Original	PDF	Si1305EDL OT-323 SC-70 09-Nov-99 99399 SI1305DL
Si1305DL Abstract: Si1305DL-T1 Text: Si1305DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −8 rDS(on) (W) ID (A) 0.280 @ VGS = −4.5 V −0.92 0.380 @ VGS = −2.5 V −0.79 0.530 @ VGS = −1.8 V −0.67 D TrenchFETr Power MOSFET: 1.8 V Rated RoHS COMPLIANT	Original	PDF	Si1305DL OT-323 SC-70 Si1305DL--T1 Si1305DL--T1--E3 08-Apr-05 Si1305DL-T1
Si1305DL Abstract: Tr431 Text: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code	Original	PDF	Si1305EDL OT-323 SC-70 08-Apr-05 Si1305DL Tr431
SI1305DL Abstract: No abstract text available Text: SPICE Device Model Si1305DL P-Channel 1.8-V G-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-Circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	PDF	Si1305DL

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SI1305 Price and Stock

Suzhou Novosense Microelectronics Co Ltd NSI1305M25-DSWR

Vishay Siliconix SI1305DL-T1-E3

Vishay Siliconix SI1305DL-T1-GE3

Vishay Siliconix SI1305EDL-T1-E3

Vishay Intertechnologies SI1305DL-T1-E3

SI1305 Datasheets (9)

SI1305 Datasheets Context Search

P-Channel 1.8-V G-S MOSFET sot-323

Si1305DL

F MARKING 6PIN

9713

Untitled

Si1305DL

Si1305BDL

Si1305DL

P-Channel 1.8-V G-S MOSFET sot-323

Si1305DL

P-Channel 1.8-V G-S MOSFET sot-323

Si1305DL

DATASHEET 5609

Si1305DL

Si1305DL

Untitled

Si1305DL

Untitled

4802

MARKING CODE LB

99399

Si1305DL

Si1305DL

SI1305DL