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    SI2369DS Price and Stock

    Vishay Siliconix SI2369DS-T1-BE3

    P-CHANNEL 30-V (D-S) MOSFET
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    DigiKey SI2369DS-T1-BE3 Cut Tape 4,453 1
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    SI2369DS-T1-BE3 Digi-Reel 4,453 1
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    SI2369DS-T1-BE3 Reel 3,000 3,000
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    Vishay Intertechnologies SI2369DS-T1-BE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2369DS-T1-BE3)
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    Avnet Americas SI2369DS-T1-BE3 Reel 6,000 17 Weeks 3,000
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    Mouser Electronics SI2369DS-T1-BE3 32,641
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    Verical SI2369DS-T1-BE3 6,000 3,000
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    Arrow Electronics SI2369DS-T1-BE3 6,000 17 Weeks 3,000
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    Newark SI2369DS-T1-BE3 Bulk 6,000
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    TTI SI2369DS-T1-BE3 Reel 60,000 3,000
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    EBV Elektronik SI2369DS-T1-BE3 18 Weeks 3,000
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    Vishay Intertechnologies SI2369DS-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2369DS-T1-GE3)
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    Avnet Americas SI2369DS-T1-GE3 Reel 17 Weeks 6,000
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    Mouser Electronics SI2369DS-T1-GE3 59,339
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    Verical SI2369DS-T1-GE3 13,635 397
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    SI2369DS-T1-GE3 12,000 3,000
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    SI2369DS-T1-GE3 4,957 49
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    Arrow Electronics SI2369DS-T1-GE3 12,000 17 Weeks 3,000
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    SI2369DS-T1-GE3 Cut Strips 4,957 17 Weeks 1
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    Newark SI2369DS-T1-GE3 Reel 147,000 3,000
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    SI2369DS-T1-GE3 Cut Tape 13,635 1
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    Bristol Electronics SI2369DS-T1-GE3 1,868
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    Quest Components SI2369DS-T1-GE3 64
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    TTI SI2369DS-T1-GE3 Reel 21,000 3,000
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    TME SI2369DS-T1-GE3 3,118 1
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    Avnet Asia SI2369DS-T1-GE3 19 Weeks 6,000
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    EBV Elektronik SI2369DS-T1-GE3 18 Weeks 3,000
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    New Advantage Corporation SI2369DS-T1-GE3 3,000 1
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    Vishay BLH SI2369DS-T1-GE3

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    Bristol Electronics SI2369DS-T1-GE3 80 9
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    Vishay Huntington SI2369DS-T1-GE3

    MOSFET P-CH 30V 7.6A TO-236
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    Win Source Electronics SI2369DS-T1-GE3 48,000
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    SI2369DS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2369DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 7.6A TO-236 Original PDF

    SI2369DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2369DS www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2369DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI2369DS

    Abstract: No abstract text available
    Text: Si2369DS Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A)a


    Original     		PDF Si2369DS O-236 OT-23) Si2369DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A