Untitled
Abstract: No abstract text available
Text: New Product Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V 14.1 12.2 20 18.9 VDS (V) Channel-1
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Si4340CDY
SO-14
08-Apr-05
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rc 4709
Abstract: 9947-n AN609
Text: Si4340CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When
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Si4340CDY
AN609,
CONF0212
22-Apr-08
rc 4709
9947-n
AN609
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SI4340CDY
Abstract: No abstract text available
Text: SPICE Device Model Si4340CDY Vishay Siliconix Dual N-Channel 20 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4340CDY
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.1 12.2 20
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Si4340CDY
2002/95/EC
SO-14
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.1 12.2 20
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Si4340CDY
SO-14
18-Jul-08
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si4340cdy
Abstract: Si4340DY Si4340DY-T1 Si4340DY-T1-E3
Text: Specification Comparison Vishay Siliconix Si4340CDY vs. Si4340DY Description: Package: Pin Out: Dual N-Channel, 20-V D-S MOSFET with Schottky Diode SO-14 Identical Part Number Replacements: Si4340CDY-T1-E3 replaces Si4340DY-T1-E3 Si4340CDY-T1-E3 replaces Si4340DY-T1
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Si4340CDY
Si4340DY
SO-14
Si4340CDY-T1-E3
Si4340DY-T1-E3
Si4340DY-T1
15-Jul-09
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Untitled
Abstract: No abstract text available
Text: New Product Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V 14.1 12.2 20 18.9 VDS (V) Channel-1
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Si4340CDY
SO-14
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.1 12.2 20
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Si4340CDY
SO-14
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4340CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) (Ω) 0.0094 at VGS = 10 V 0.0125 at VGS = 4.5 V 0.008 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 14.1 12.2 20
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Si4340CDY
2002/95/EC
SO-14
11-Mar-11
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
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