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    SI4684DY Price and Stock

    Vishay Siliconix SI4684DY-T1-E3

    MOSFET N-CH 30V 16A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4684DY-T1-E3 Reel 2,500
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    • 10000 $0.6
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    Vishay Siliconix SI4684DY-T1-GE3

    MOSFET N-CH 30V 16A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4684DY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6
    Buy Now

    Vishay Siliconix SI4684DYT1E3

    N-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 16A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI4684DYT1E3 2,500
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    SI4684DY Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4684DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4684DY-RC Vaishali Semiconductor R-C Thermal Model Parameters Original PDF
    SI4684DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16A 8-SOIC Original PDF
    SI4684DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16A 8-SOIC Original PDF

    SI4684DY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si4684DY-T1-GE3

    Abstract: Si4684DY Si4684DY-T1-E3
    Text: Si4684DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology


    Original
    Si4684DY 2002/95/EC Si4684DY-T1-E3 Si4684DY-T1-GE3 18-Jul-08 PDF

    SI4684DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4684DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4684DY S-50586Rev. 04-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4684DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) (Ω) ID (A) 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses


    Original
    Si4684DY 2002/95/EC Si4684DY-T1-E3 Si4684DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4684DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) (Ω) ID (A) 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses


    Original
    Si4684DY 2002/95/EC Si4684DY-T1-E3 Si4684DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4684DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) (Ω) ID (A) 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Low Switching Losses


    Original
    Si4684DY 2002/95/EC Si4684DY-T1-E3 Si4684DY-T1-GE3 11-Mar-11 PDF

    Si4684DY-T1-E3

    Abstract: Si4684DY
    Text: Si4684DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ) 14 nC • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET


    Original
    Si4684DY Si4684DY-T1-E3 S-61013-Rev. 12-Jun-06 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4684DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ) 14 nC • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET


    Original
    Si4684DY Si4684DY-T1-E3 18-Jul-08 PDF

    s61926

    Abstract: S-61926 Si4684DY
    Text: SPICE Device Model Si4684DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4684DY 18-Jul-08 s61926 S-61926 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4684DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ) 14 nC • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET


    Original
    Si4684DY Si4684DY-T1-E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4684DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology


    Original
    Si4684DY 2002/95/EC Si4684DY-T1-E3 Si4684DY-T1-GE3 11-Mar-11 PDF

    c 4161

    Abstract: AN609 Si4684DY
    Text: Si4684DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si4684DY AN609 14-Nov-05 c 4161 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4684DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology


    Original
    Si4684DY 2002/96/EC Si4684DY-T1-E3 Si4684DY-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4684DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0115 at VGS = 4.5 V 14 Qg (Typ.) 14 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology


    Original
    Si4684DY 2002/95/EC Si4684DY-T1-E3 Si4684DY-T1-GE3 11-Mar-11 PDF

    SI4684DY

    Abstract: No abstract text available
    Text: Si4684DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 (A)a ID rDS(on) (W) 0.0094 @ VGS = 10 V 16 0.0115 @ VGS = 4.5 V 14 Qg (Typ) 14 nC D Extremely Low Qgd WFETr Technology for Low Switching Losses D TrenchFETr Power MOSFET


    Original
    Si4684DY Si4684DY--E3 Si4684DY-T1--E3 08-Apr-05 PDF

    kb926

    Abstract: kb925 FBMA-L11-201209-221LMA30T compal Compal Electronics foxconn Compal Merom RT8203 mobile 478 SOCKET PIN VSS256
    Text: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Merom uFCPGA with Satna Rosa Platform 3 3 2007-07-24 REV:0.3 4 Compal Secret Data 2006/07/26 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original
    PDF

    foxconn g41

    Abstract: G781P8F foxconn bios flash header PCI8402 TPS2231 MBX 146 mbx 202 schematic kb3910 KB3910SF Foxconn MS01
    Text: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Title of Schematics Page Schematics Page Index Block Diagram Yonah(HOST BUS) 1/2


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    74AHC1G08GW 1R-0000102-J200 pin81 pin176 R519/R520 1R-0000220-F200 MS60-1-05 MBX-163) foxconn g41 G781P8F foxconn bios flash header PCI8402 TPS2231 MBX 146 mbx 202 schematic kb3910 KB3910SF Foxconn MS01 PDF

    Compal Electronics

    Abstract: compal smd sot23-3 W32 UFCBGA479 compal la LA-3342P DIODE T25-4 PLC1045P R3381 PR210
    Text: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Yonah uFCPGA with Intel Calistoga_GM/PM+ICH7-M core logic 3 3 2006-07-24 REV:1.0 4 4 Compal Secret Data Security Classification 2005/03/10 Issued Date 2006/03/10 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original
    WILM393DR Compal Electronics compal smd sot23-3 W32 UFCBGA479 compal la LA-3342P DIODE T25-4 PLC1045P R3381 PR210 PDF

    LA-4082P

    Abstract: G6179 XDR 1 NVIDIA schematics kb926 tps51125 Compal Electronics la-6121P Montevina compal notebook schematics FBMA-L11-201209-221LMA30T TPS2231
    Text: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_PM+ICH9-M core logic 3 3 LA-4082P Vader Discrete NB9P-GS,NB9M-GE 2009-01-07 Rev 1.0_2F 4 4 2006/02/13 Issued Date Compal Electronics, Inc. Compal Secret Data


    Original
    LA-4082P A4082 G6179 XDR 1 NVIDIA schematics kb926 tps51125 Compal Electronics la-6121P Montevina compal notebook schematics FBMA-L11-201209-221LMA30T TPS2231 PDF

    JBK00 LA4092P

    Abstract: LA-4092P JBK00 KB926 tps51125 JBK00 LA4092P 1.0 FBMA-L11-201209-221LMA30T kb926qf RT8204 LA-4111P
    Text: A B C D E 1 1 Compal confidential 2 2 JBK00 LA-4092P Schematics Document Mobile AMD S1G2 CPU with ATI RX781 & SB700 core logic with M82-S 3 3 2008-02-20 REV:0.4 4 4 Compal Secret Data Security Classification 2007/08/02 Issued Date 2008/08/02 Deciphered Date


    Original
    JBK00 LA-4092P RX781 SB700 M82-S JBK00 LA4092P KB926 tps51125 JBK00 LA4092P 1.0 FBMA-L11-201209-221LMA30T kb926qf RT8204 LA-4111P PDF

    compal

    Abstract: Compal Electronics isl6260 PLC1045P MOBILE INTEL CALISTOGA isl6227caz ISL6260CRZ PJP18 PCBGA1466 MC910
    Text: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Yonah uFCPGA with Intel Calistoga_GM/PM+ICH7-M core logic 3 3 2006-05-19 REV:0.1 4 4 Compal Secret Data Security Classification 2005/03/10 Issued Date 2006/03/10 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original
    LM393DR compal Compal Electronics isl6260 PLC1045P MOBILE INTEL CALISTOGA isl6227caz ISL6260CRZ PJP18 PCBGA1466 MC910 PDF

    la2841

    Abstract: ICS9LP306 compal TPS2231 PLC1045P mini pcie connector 52 pin vertical Socket AM2 Compal Electronics G993 samsung electronics ba41
    Text: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Yonah uFCPGA with Intel Calistoga_GM/PM+ICH7-M core logic 3 3 2005-12-15 REV:1.0 4 4 Compal Secret Data Security Classification 2005/03/10 Issued Date 2006/03/10 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original
    LA-2841 la2841 ICS9LP306 compal TPS2231 PLC1045P mini pcie connector 52 pin vertical Socket AM2 Compal Electronics G993 samsung electronics ba41 PDF

    ultrasonic sensor 200khz

    Abstract: 110 volt output smps design datasheet PCB layout Ultrasonic SWITCH 24v 5a smps computer smps circuit diagram max17031e SMPS CIRCUIT DIAGRAM USING TRANSISTORS T2444-3 irf P-Channel MOSFET audio LDO low drop out
    Text: 19-4305; Rev 0; 10/08 KIT ATION EVALU E L B A IL AVA Dual Quick-PWM Step-Down Controller with LowPower LDO and RTC Regulator for MAIN Supplies ♦ Dual Quick-PWM ♦ Preset 5V and 3.3V Outputs ♦ Internal 100mA, 5V Linear Regulator ♦ Internal OUT1 LDO5 Bypass Switch


    Original
    100mA, MAX17031ETG+ T2444-3 ultrasonic sensor 200khz 110 volt output smps design datasheet PCB layout Ultrasonic SWITCH 24v 5a smps computer smps circuit diagram max17031e SMPS CIRCUIT DIAGRAM USING TRANSISTORS T2444-3 irf P-Channel MOSFET audio LDO low drop out PDF

    Si4830

    Abstract: Fast Switching mosfet SI3433B smd diode 615
    Text: Notebook Table of Contents POWER MANAGEMENT, Charger Power. 3 POWER MANAGEMENT, CPU Power. 6


    Original
    4110ppm 400ppm Q-101 BZX384 OD323 Si4830 Fast Switching mosfet SI3433B smd diode 615 PDF

    KB926

    Abstract: JBK00 LA4092P JBK00 LA4092P 1.0 JBK00 LA-4092P PC613 PC614 tps51125 RX781 FBMA-L11-201209-221LMA30T
    Text: A B C D E 1 1 Compal confidential 2 2 JBK00 LA-4092P Schematics Document Mobile AMD S1G2 CPU with ATI RX781 & SB700 core logic with M82-S 3 3 2008-05-13 REV:1.0 4 4 Compal Secret Data Security Classification 2007/08/02 Issued Date 2008/08/02 Deciphered Date


    Original
    JBK00 LA-4092P RX781 SB700 M82-S KB926 JBK00 LA4092P JBK00 LA4092P 1.0 PC613 PC614 tps51125 RX781 FBMA-L11-201209-221LMA30T PDF