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    SIHD3N50D Search Results

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    SIHD3N50D Price and Stock

    Vishay Siliconix SIHD3N50D-GE3

    MOSFET N-CH 500V 3A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD3N50D-GE3 Tube 2,980 1
    • 1 $1.31
    • 10 $0.825
    • 100 $1.31
    • 1000 $0.38612
    • 10000 $0.38612
    		Buy Now

    Vishay Siliconix SIHD3N50D-E3

    MOSFET N-CH 500V 3A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD3N50D-E3 Tube 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.337
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    Vishay Siliconix SIHD3N50D-BE3

    MOSFET N-CH 500V 3A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD3N50D-BE3 Tube 3,000
    • 1 -
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    • 10000 $0.337
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    Vishay Siliconix SIHD3N50DT1-GE3

    MOSFET N-CH 500V 3A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD3N50DT1-GE3 Reel 2,000
    • 1 -
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    • 10000 $0.2966
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    Vishay Siliconix SIHD3N50DT4-GE3

    MOSFET N-CH 500V 3A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD3N50DT4-GE3 Tube 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.337
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    Find more SIHD3N50D price and stock on Findchips.com

    SIHD3N50D Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHD3N50D-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO252 DPAK Original PDF
    SIHD3N50D-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 3A TO252 DPAK Original PDF
    SIHD3N50DT1-GE3 Vishay Siliconix MOSFET N-CH 500V 3A DPAK Original PDF
    SIHD3N50DT4-GE3 Vishay Siliconix MOSFET N-CH 500V 3A DPAK Original PDF
    SIHD3N50DT5-GE3 Vishay Siliconix MOSFET N-CH 500V 3A DPAK Original PDF

    SIHD3N50D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHD3N50DA_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHD3N50DA AN609, 8755u 6698m 8998m 7460m 09-Jan-14

    Untitled

    Abstract: No abstract text available
    Text: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness


    Original     		PDF SiHD3N50DA O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHD3N50D O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHD3N50D O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sihd3n50

    Abstract: SIHD3N50D-GE3
    Text: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		PDF SiHD3N50D O-252) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihd3n50 SIHD3N50D-GE3

    Untitled

    Abstract: No abstract text available
    Text: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		PDF SiHD3N50D O-252) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original     		PDF O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836