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Vishay Siliconix SIHF23N60E-GE3 MOSFET N-CH 600V 23A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF23N60E-GE3	Reel			1,000	1 - 10 - 100 - 1000 $1.56144 10000 $1.52825	Buy Now
Vishay Intertechnologies SIHF23N60E-GE3 N-CHANNEL 600V - Tape and Reel (Alt: SIHF23N60E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHF23N60E-GE3	Reel		19 Weeks	1,000	1 - 10 - 100 - 1000 $1.52825 10000 $1.43835	Buy Now
Mouser Electronics	SIHF23N60E-GE3					1 $3.27 10 $2.74 100 $2.22 1000 $1.56 10000 $1.52	Get Quote
TME	SIHF23N60E-GE3				1	1 $3.11 10 $2.79 100 $2.23 1000 $2.07 10000 $2.07	Get Quote
EBV Elektronik	SIHF23N60E-GE3			20 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIHF23N60E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHF23N60E-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 23A TO-220		Original	PDF

SIHF23N60E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses	Original	SiHF23N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced switching and conduction losses	Original	SiHF23N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHF23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses	Original	SiHF23N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHF23N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHF23N60E AN609, 4220u 2602m 6200m 5226m 02-Apr-13	PDF