IRFB9N65
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFB9N65
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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IRFB9N65A applications
Abstract: IRFB9N65A SiHFIB5N65A SiHFB9N65A SiHFB9N65A-E3 smps power
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*
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Original
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IRFB9N65A,
SiHFB9N65A
O-220
18-Jul-08
IRFB9N65A applications
IRFB9N65A
SiHFIB5N65A
SiHFB9N65A-E3
smps power
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRFB9N65A
Abstract: SiHFB9N65A SiHFB9N65A-E3 SiHFIB5N65A IRFB9N65
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
11-Mar-11
IRFB9N65A
SiHFB9N65A-E3
SiHFIB5N65A
IRFB9N65
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PDF
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s-81243
Abstract: SiHFIB5N65A
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*
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Original
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IRFB9N65A,
SiHFB9N65A
O-220
O-220
IRFB9N65APbFmerchantability,
12-Mar-07
s-81243
SiHFIB5N65A
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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AN609
Abstract: IRFB9N65A SiHFB9N65A
Text: IRFB9N65A_RC, SiHFB9N65A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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IRFB9N65A
SiHFB9N65A
AN609,
16-Apr-10
AN609
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFB9N65A,
SiHFB9N65A
2002/95/EC
O-220AB
11-Mar-11
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PDF
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