SiHFI9640G
Abstract: No abstract text available
Text: IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9640G,
SiHFI9640G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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SiHFI9640G
Abstract: IRFI9640G SiHFI9640G-E3
Text: IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9640G,
SiHFI9640G
O-220
18-Jul-08
IRFI9640G
SiHFI9640G-E3
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PDF
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SiHFI9640G
Abstract: No abstract text available
Text: IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9640G,
SiHFI9640G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SiHFI9640G
Abstract: IRFI9640G SiHFI9640G-E3
Text: IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9640G,
SiHFI9640G
O-220
11-Mar-11
IRFI9640G
SiHFI9640G-E3
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PDF
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SiHFI9640G
Abstract: No abstract text available
Text: IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9640G,
SiHFI9640G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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AN609
Abstract: IRFI9640G SiHFI9640G
Text: IRFI9640G_RC, SiHFI9640G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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IRFI9640G
SiHFI9640G
AN609,
11-May-10
AN609
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PDF
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SiHFI9640G
Abstract: IRFI9640G SiHFI9640G-E3
Text: IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9640G,
SiHFI9640G
O-220
18-Jul-08
IRFI9640G
SiHFI9640G-E3
|
PDF
|
SiHFI9640G
Abstract: No abstract text available
Text: IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9640G,
SiHFI9640G
O-220
12-Mar-07
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PDF
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SiHFI9640G
Abstract: No abstract text available
Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
|
IRFI9610G,
SiHFI9610G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SiHFI9640G
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PDF
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IRFI9610G
Abstract: SiHFI9640G IRFI9640G SiHFI9640G-E3
Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9610G,
SiHFI9610G
O-220
18-Jul-08
IRFI9610G
SiHFI9640G
IRFI9640G
SiHFI9640G-E3
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PDF
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SiHFI9640G
Abstract: No abstract text available
Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9610G,
SiHFI9610G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SiHFI9640G
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PDF
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SiHFI9640G
Abstract: IRFI9610G IRFI9640G SiHFI9640G-E3
Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9610G,
SiHFI9610G
O-220
18-Jul-08
SiHFI9640G
IRFI9610G
IRFI9640G
SiHFI9640G-E3
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PDF
|
SiHFI9640G
Abstract: No abstract text available
Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
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IRFI9610G,
SiHFI9610G
O-220
12-Mar-07
SiHFI9640G
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PDF
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SiHFI9640G
Abstract: No abstract text available
Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance
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Original
|
IRFI9610G,
SiHFI9610G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SiHFI9640G
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PDF
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