IRFP22N60K
Abstract: irfp22n60 91208 SiHFP22N60K
Text: IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.24 Qg (Max.) (nC) 150 Qgs (nC) 45 Qgd (nC) 76 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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IRFP22N60K,
SiHFP22N60K
O-247
18-Jul-08
IRFP22N60K
irfp22n60
91208
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PDF
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irfp22n60k
Abstract: 91208 SiHFP22N60K mosfet IRFP22N60K
Text: IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Hard Switching Primary or PFS Switch 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Low Gate Charge Qg Results in Simple Drive Requirement 0.24 150 Qgs (nC) • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFP22N60K,
SiHFP22N60K
O-247
18-Jul-08
irfp22n60k
91208
mosfet IRFP22N60K
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.24 Qg (Max.) (nC) 150 Qgs (nC) 45 Qgd (nC) 76 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFP22N60K,
SiHFP22N60K
2002/95/EC
O-247AC
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.24 Qg (Max.) (nC) 150 Qgs (nC) 45 Qgd (nC) 76 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFP22N60K,
SiHFP22N60K
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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irf*2n60
Abstract: No abstract text available
Text: IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.24 Qg (Max.) (nC) 150 Qgs (nC) 45 Qgd (nC) 76 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFP22N60K,
SiHFP22N60K
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irf*2n60
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Hard Switching Primary or PFS Switch 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Low Gate Charge Qg Results in Simple Drive Requirement 0.24 150 Qgs (nC) • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFP22N60K,
SiHFP22N60K
O-247
O-247
12-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.24 Qg (Max.) (nC) 150 Qgs (nC) 45 Qgd (nC) 76 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFP22N60K,
SiHFP22N60K
2002/95/EC
O-247AC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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AN609
Abstract: IRFP22N60K SiHFP22N60K
Text: IRFP22N60K_RC, SiHFP22N60K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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Original
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IRFP22N60K
SiHFP22N60K
AN609,
08-Jun-10
AN609
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V 0.24 Qg (Max.) (nC) 150 Qgs (nC) 45 Qgd (nC) 76 Configuration • Improved Gate, Avalanche and Dynamic dV/dt
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Original
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IRFP22N60K,
SiHFP22N60K
2002/95/EC
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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1N4007 MINI MELF
Abstract: No abstract text available
Text: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4
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250ns
DO-220AA
V-540V;
V-440V;
DO-204AL
DO-41)
DO-204AC
1N4007 MINI MELF
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