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    Vishay Intertechnologies SIHL530STRR-GE3

    Transistor: N-MOSFET; unipolar; 100V; 11A; Idm: 60A; 88W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHL530STRR-GE3 1
    • 1 $0.96
    • 10 $0.87
    • 100 $0.69
    • 1000 $0.62
    • 10000 $0.62
    		Get Quote

    SIHL530 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRL530

    Abstract: SiHL530 SiHL530-E3
    Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL530, SiHL530 O-220 O-220 18-Jul-08 IRL530 SiHL530-E3

    Untitled

    Abstract: No abstract text available
    Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.16 Available Qg (Max.) (nC) 28 • Logic-Level Gate Drive Qgs (nC) 3.8 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRL530, SiHL530 O-220 O-220 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive


    Original     		PDF IRL530S, SiHL530S 2002/95/EC O-263) O-263hay 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL530, SiHL530 O-220AB 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN609

    Abstract: IRL530 SiHL530
    Text: IRL530_RC, SiHL530_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRL530 SiHL530 AN609, 4809m 1557m 8444m 8849m 8988m 9986m 3476m AN609

    IRL530

    Abstract: SiHL530 SiHL530-E3
    Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL530, SiHL530 O-220AB 2002/95/EC O-220AB 11-Mar-11 IRL530 SiHL530-E3

    irl530

    Abstract: No abstract text available
    Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL530, SiHL530 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A irl530

    Untitled

    Abstract: No abstract text available
    Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL530, SiHL530 O-220AB 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    AN609

    Abstract: IRL530S SiHL530S
    Text: IRL530S_RC, SiHL530S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRL530S SiHL530S AN609, 7554m 1954m 2375m 1812m 9643m 1123m 3468m AN609

    IRL530

    Abstract: IRL530S SiHL530S 91342
    Text: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D D2PAK Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL530S, SiHL530S O-263) 18-Jul-08 IRL530 IRL530S 91342

    Untitled

    Abstract: No abstract text available
    Text: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL530S, SiHL530S SMD-220 18-Jul-08

    930 diode smd

    Abstract: No abstract text available
    Text: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL530S, SiHL530S SMD-220 18-Jul-08 930 diode smd

    Untitled

    Abstract: No abstract text available
    Text: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D D2PAK DESCRIPTION (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL530S, SiHL530S 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.16 Available Qg (Max.) (nC) 28 • Logic-Level Gate Drive Qgs (nC) 3.8 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		PDF IRL530, SiHL530 O-220 O-220 12-Mar-07

    IRL530S

    Abstract: SiHL530S 91342 irl530st
    Text: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D D2PAK DESCRIPTION (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL530S, SiHL530S O-263) 2002/95/EC 11-Mar-11 IRL530S 91342 irl530st

    Untitled

    Abstract: No abstract text available
    Text: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive


    Original     		PDF IRL530S, SiHL530S 2002/95/EC O-263) O-263hay 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic Level Gate Drive


    Original     		PDF IRL530S, SiHL530S 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    irl530

    Abstract: No abstract text available
    Text: IRL530, SiHL530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 5.0 V 0.16 Qg (Max.) (nC) 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL530, SiHL530 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irl530