SIJ484DP Search Results

SIJ484DP Price and Stock

Filter by Manufacturer


Vishay Siliconix SIJ484DP-T1-GE3 MOSFET N-CH 30V 35A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIJ484DP-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIS402DN-T1-GE3 MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SIS402DN-T1-GE3	Reel	12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.609	Buy Now

SIJ484DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIJ484DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35A PPAK SO-8L		Original	PDF

SIJ484DP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21	Original	PDF	SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21	Original	PDF	SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21	Original	PDF	SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SPICE Device Model SiJ484DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiJ484DP 18-Jul-08
7513 Abstract: 7937 AN609 Cauer 9836-1 Text: SiJ484DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	SiJ484DP AN609, 31-Mar-09 7513 7937 AN609 Cauer 9836-1
Untitled Abstract: No abstract text available Text: New Product SiJ484DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0063 at VGS = 10 V 35g 0.0082 at VGS = 4.5 V 35g VDS (V) 30 Qg (Typ.) 13.7 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21	Original	PDF	SiJ484DP 2002/95/EC SiJ484DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12