Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR774DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR774DP
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiR774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)a 0.0026 at VGS = 10 V 40 0.0034 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 28.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • VRM, POL, Server
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SiR774DP
2002/95/EC
SiR774DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiR774DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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SiR774DP
AN609,
2536m
9642m
1390m
4012m
9573m
3029m
2700m
6566m
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Untitled
Abstract: No abstract text available
Text: New Product SiR774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)a 0.0026 at VGS = 10 V 40 0.0034 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 28.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • VRM, POL, Server
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SiR774DP
2002/95/EC
SiR774DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0026 at VGS = 10 V 40 0.0034 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 28.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • VRM, POL, Server
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Original
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SiR774DP
2002/95/EC
SiR774DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiR774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)a 0.0026 at VGS = 10 V 40 0.0034 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 28.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • VRM, POL, Server
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Original
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PDF
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SiR774DP
2002/95/EC
SiR774DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiR774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0026 at VGS = 10 V 40 0.0034 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 28.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • VRM, POL, Server
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SiR774DP
2002/95/EC
SiR774DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - Save Space, Increase Performance SkyFET Integrated MOSFET and Schottky Diode Solution Key Benefits • • • • Increases efficiency for DC/DC converter applications Reduces space and solution cost by eliminating external Schottky diodes
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SiS778DN
SiS782DN
SiS780DN
SiZ914DT
VMN-PT0104-1302
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si4776
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Save Space, Increase Performance AND TEC I INNOVAT O L OGY SkyFET N HN POWER MOSFETs O 19 62-2012 Integrated MOSFET and Schottky Diode Solution KEY BENEFITS • • • • Increases efficiency for DC/DC converter applications
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SiR788DP
Si7774DP
Si7748DP
Si7772DP
Si4628DY
Si4752DY
Si4774DY
Si4712DY
Si4714DY
Si4776DY
si4776
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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