Untitled
Abstract: No abstract text available
Text: New Product SiR798DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a 0.00205 at VGS = 10 V 60 0.00300 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 41.6 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
SiR798DP
2002/95/EC
SiR798DP-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: New Product SiR798DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a 0.00205 at VGS = 10 V 60 0.00300 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 41.6 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
SiR798DP
2002/95/EC
SiR798DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiR798DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a 0.00205 at VGS = 10 V 60 0.00300 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 41.6 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
SiR798DP
2002/95/EC
SiR798DP-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: New Product SiR798DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a 0.00205 at VGS = 10 V 60 0.00300 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 41.6 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
SiR798DP
2002/95/EC
SiR798DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiR798DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a 0.00205 at VGS = 10 V 60 0.00300 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 41.6 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
SiR798DP
2002/95/EC
SiR798DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR798DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
|
Original
|
PDF
|
SiR798DP
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - Save Space, Increase Performance SkyFET Integrated MOSFET and Schottky Diode Solution Key Benefits • • • • Increases efficiency for DC/DC converter applications Reduces space and solution cost by eliminating external Schottky diodes
|
Original
|
PDF
|
SiS778DN
SiS782DN
SiS780DN
SiZ914DT
VMN-PT0104-1302
|
si4776
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Save Space, Increase Performance AND TEC I INNOVAT O L OGY SkyFET N HN POWER MOSFETs O 19 62-2012 Integrated MOSFET and Schottky Diode Solution KEY BENEFITS • • • • Increases efficiency for DC/DC converter applications
|
Original
|
PDF
|
SiR788DP
Si7774DP
Si7748DP
Si7772DP
Si4628DY
Si4752DY
Si4774DY
Si4712DY
Si4714DY
Si4776DY
si4776
|
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
|
Original
|
PDF
|
Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
|