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Vishay Siliconix SIRA36DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIRA36DP-T1-GE3	Cut Tape	2,924		1	1 $2.04 10 $1.3 100 $2.04 1000 $0.64084 10000 $0.64084	Buy Now
	SIRA36DP-T1-GE3	Digi-Reel	2,924		1	1 $2.04 10 $1.3 100 $2.04 1000 $0.64084 10000 $0.64084	Buy Now
	SIRA36DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.53838	Buy Now
Vishay Intertechnologies SIRA36DP-T1-GE3 Trans MOSFET N-CH 30V 28.5A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA36DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIRA36DP-T1-GE3	Reel		21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.52977	Buy Now
Bristol Electronics	SIRA36DP-T1-GE3		1,190			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SIRA36DP-T1-GE3		952			1 $2.156 10 $2.156 100 $2.156 1000 $0.7546 10000 $0.7546	Buy Now
TTI	SIRA36DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.538	Buy Now
TME	SIRA36DP-T1-GE3				1	1 $0.746 10 $0.46 100 $0.366 1000 $0.329 10000 $0.329	Get Quote

EBV Elektronik	SIRA36DP-T1-GE3			22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIRA36DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIRA36DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A SO-8		Original	PDF

SIRA36DP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiRA36DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	SiRA36DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiRA36DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0028 at VGS = 10 V 40 0.0042 at VGS = 4.5 V 40 Qg (Typ.) 17.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 S 6.15 mm	Original	SiRA36DP SiRA36DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402	PDF
N-Channel MOSFETs Abstract: No abstract text available Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in	Original	SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs	PDF