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    Vishay Siliconix SIS496EDNT-T1-GE3

    MOSFET N-CH 30V 50A PPAK1212-8
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    DigiKey SIS496EDNT-T1-GE3 Reel
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    Vishay Intertechnologies SIS496EDNT-T1-GE3

    Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK 1212 EP T/R
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    Arrow Electronics SIS496EDNT-T1-GE3 Cut Strips 198 60 Weeks 1
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    Bristol Electronics SIS496EDNT-T1-GE3 5,899
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    Quest Components SIS496EDNT-T1-GE3 4,719
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    SIS496EDNT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS496EDNT-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A POWERPAK1212 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V


    Original     		SiS496EDNT SiS496EDNT-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V


    Original     		SiS496EDNT SiS496EDNT-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS496EDNT-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiS496EDNT-GE3 AN609, 8275m 3444u 7413m 2543m 8535m 1282m 6387m 18-Jun-13 PDF