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    SIZ340DT Search Results

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    SIZ340DT Price and Stock

    Vishay Siliconix SIZ340DT-T1-GE3

    MOSFET 2N-CH 30V 30A/40A 8PWR33
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIZ340DT-T1-GE3 Digi-Reel 7,696 1
    • 1 $1.44
    • 10 $0.907
    • 100 $1.44
    • 1000 $0.42911
    • 10000 $0.42911
    		Buy Now
    SIZ340DT-T1-GE3 Cut Tape 7,696 1
    • 1 $1.44
    • 10 $0.907
    • 100 $1.44
    • 1000 $0.42911
    • 10000 $0.42911
    		Buy Now
    SIZ340DT-T1-GE3 Reel 6,000 3,000
    • 1 -
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    • 10000 $0.37562
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    New Advantage Corporation SIZ340DT-T1-GE3 6,000 1
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.4267
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    Vishay Intertechnologies SIZ340DT-T1-GE3

    DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIZ340DT-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIZ340DT-T1-GE3 Reel 17 Weeks 3,000
    • 1 -
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    • 10000 $0.32718
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    SIZ340DT-T1-GE3 Reel 17 Weeks 6,000
    • 1 -
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    • 100 -
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    • 10000 $0.3325
    		Buy Now
    Mouser Electronics SIZ340DT-T1-GE3 5,800
    • 1 $1.11
    • 10 $0.757
    • 100 $0.542
    • 1000 $0.403
    • 10000 $0.332
    		Buy Now
    Verical SIZ340DT-T1-GE3 5,400 17
    • 1 -
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    • 100 $0.4848
    • 1000 $0.3841
    • 10000 $0.3571
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    Arrow Electronics SIZ340DT-T1-GE3 Cut Strips 5,400 17 Weeks 1
    • 1 $0.7937
    • 10 $0.592
    • 100 $0.4848
    • 1000 $0.3841
    • 10000 $0.3571
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    Newark SIZ340DT-T1-GE3 Cut Tape 6,293 1
    • 1 $0.89
    • 10 $0.716
    • 100 $0.565
    • 1000 $0.565
    • 10000 $0.565
    		Buy Now
    SIZ340DT-T1-GE3 Reel 6,000
    • 1 -
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    • 10000 $0.354
    		Buy Now
    Bristol Electronics SIZ340DT-T1-GE3 2,579
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    Quest Components SIZ340DT-T1-GE3 2,063
    • 1 $1.33
    • 10 $1.33
    • 100 $1.33
    • 1000 $0.532
    • 10000 $0.4655
    		Buy Now
    TTI SIZ340DT-T1-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $0.339
    		Buy Now
    TME SIZ340DT-T1-GE3 3,000
    • 1 -
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    • 10000 $0.412
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    Avnet Asia SIZ340DT-T1-GE3 22 Weeks 6,000
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    EBV Elektronik SIZ340DT-T1-GE3 3,000 21 Weeks 3,000
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    Vishay Huntington SIZ340DT-T1-GE3

    MOSFET 2N-CH 30V 30A SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIZ340DT-T1-GE3 303,666
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.2739
    • 10000 $0.263
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    SIZ340DT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIZ340DT-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 30A SOT-23 Original PDF

    SIZ340DT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiZ340DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0095 at VGS = 10 V 30 a 0.0137 at VGS = 4.5 V 22 0.0051 at VGS = 10 V 40 a 0.0070 at VGS = 4.5 V


    Original     		PDF SiZ340DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: 2014 Super 12 Products SiZ340DT Integrated MOSFET Power Stage in 3 mm x 3 mm Package SiZ340DT Lowest Low-Side On-Resistance at VGS = 4.5 V Among Devices with Compatible Footprints • Features • 5 % efficiency improvement from previous generation – TrenchFET Gen IV technology reduces RDS ON of low-side MOSFET by 60 %


    Original     		PDF SiZ340DT SiZ300DT

    Untitled

    Abstract: No abstract text available
    Text: SiZ340DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () MAX. ID (A) 0.0095 at VGS = 10 V 30a 0.0137 at VGS = 4.5 V 22 0.0051 at VGS = 10 V 40a 0.0070 at VGS = 4.5 V


    Original     		PDF SiZ340DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiZ340DT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiZ340DT AN609, MOD87 21-Oct-14

    Untitled

    Abstract: No abstract text available
    Text: 2014 Vishay Intertechnology, Inc. SUPER 12 Featured Products www.vishay.com/ref/2014s12 S12 Super 12 Featured Products Table of Contents 1 2 WSLP High-Power Surface-Mount Power Metal Strip Current Sensing Resistor TMBS® in SMPA Trench MOS Barrier Schottky Rectifiers in


    Original     		PDF com/ref/2014s12 TCPT1350X01 TCUT1350X01 SiZ340DT VMN-MS6834-1312

    QUAD HIFREQ

    Abstract: No abstract text available
    Text: 2014 Vishay Intertechnology, Inc. Super 12 Featured Products www.vishay.com/ref/2014s12 S12 Super 12 Featured Products Table of Contents 1 WSLp 2 SmpAパッケージのTmBS 3 prAhT 4 高電力表面実装型Power Metal Strip 電流検出抵抗器 薄型SMPA パッケージのTrench MOSバリア・ショットキー


    Original     		PDF com/ref/2014s12 TCpT1350X01 TCuT1350X01 SiZ340DT VMN-MS6882-1403 QUAD HIFREQ

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		PDF SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P owerPAIR MOSFET s PowerPAIR 3 x 3 Provides Best Efficiency in the Industry in Compatible 3 x 3 Footprints PowerPAIR 6 x 3.7 26 % Smaller with Comparable Performance to a 6 x 5 mm2 Device PowerPAIR 6 x 5 Achieves High Efficiency in


    Original     		PDF SiZ340DT SiZ342DT VMN-MS6927-1406

    sir158

    Abstract: q113 SiZ340DT SiR158DP N3X3
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - High- and Low-Side MOSFETs in One Compact Package AND TEC I INNOVAT O L OGY PowerPAIR N HN POWER MOSFETs O 19 62-2012 Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes KEY BENEFITS


    Original     		PDF SiZ790DT SiZ914DT VMN-PT0182-1209 sir158 q113 SiZ340DT SiR158DP N3X3

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one


    Original     		PDF SiZ790DT SiZ914DT VMN-PT0182-1402