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    TC554161FTL Price and Stock

    Toshiba America Electronic Components TC554161FTL-85V

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    Bristol Electronics TC554161FTL-85V 224
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    Toshiba America Electronic Components TC554161FTL-70

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    Bristol Electronics TC554161FTL-70 8
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    Quest Components TC554161FTL-70 6
    • 1 $12.78
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    Toshiba America Electronic Components TC554161FTL-70V

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    Bristol Electronics TC554161FTL-70V 3
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    Toshiba America Electronic Components TC554161FTL-10L

    IC,SRAM,256KX16,CMOS,TSOP,54PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC554161FTL-10L 80
    • 1 $35.658
    • 10 $35.658
    • 100 $28.5264
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    Toshiba America Electronic Components TC554161FTL-70L

    IC,SRAM,256KX16,CMOS,TSOP,54PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC554161FTL-70L 16
    • 1 $23.96
    • 10 $23.96
    • 100 $22.762
    • 1000 $22.762
    • 10000 $22.762
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    TC554161FTL Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC554161FTL Toshiba 262,144-Word BY 16-BIT STATIC RAM Scan PDF
    TC554161FTL-10 Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161FTL-10 Toshiba 262, 144-word by 16 bit static RAM, access time 100ns Scan PDF
    TC554161FTL-10L Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161FTL-10L Toshiba 262, 144-word by 16 bit static RAM, access time 100ns Scan PDF
    TC554161FTL-10V Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161FTL-10V Toshiba 262,144-Word BY 16-BIT STATIC RAM Scan PDF
    TC554161FTL-70 Toshiba 262, 144-word by 16 bit static RAM, access time 70ns Scan PDF
    TC554161FTL-70 Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161FTL-70L Toshiba 262, 144-word by 16 bit static RAM, access time 70ns Scan PDF
    TC554161FTL-70L Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161FTL-70V Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161FTL-70V Toshiba 262,144-Word BY 16-BIT STATIC RAM Scan PDF
    TC554161FTL-85 Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161FTL-85 Toshiba 262, 144-word by 16 bit static RAM, access time 85ns Scan PDF
    TC554161FTL-85L Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161FTL-85L Toshiba 262, 144-word by 16 bit static RAM, access time 85ns Scan PDF
    TC554161FTL-85V Toshiba 262,144 Word by 16 Bit Static RAM Scan PDF
    TC554161FTL-85V Toshiba 262,144-Word BY 16-BIT STATIC RAM Scan PDF

    TC554161FTL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC554161FTL-85L

    Abstract: TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90
    Text: Index n INDEX TC551001CF-55 TC551001CF-55L TC551001CF-70 TC551001CF-70L TC551001CF-85 TC551001CF-85L TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC551001CFI-85L TC551001CFT-55 TC551001CFT-55L TC551001CFT-70 TC551001CFT-70L TC551001CFT-85 TC551001CFT-85L


    Original     		PDF TC551001CSRI-85L TC551001CST-55 TC551001CST-55L TC551001CST-70 TC551001CST-70L TC551001CST-85 TC551001CST-85L TC551001CSTI-70 TC551001CSTI-70L TC551001CSTI-85 TC554161FTL-85L TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90

    74HC08

    Abstract: 74HC04 application note 74HC04 74HC04 NOT GATE datasheet FREESCALE date code table TC55416FTL MC68EZ328 TC554161FTL TC554161FTL-85
    Text: Freescale Semiconductor, Inc. ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by TBD Date: 11/12/98 DragonBall Operation Application Note 16bit SRAM Interface ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc.


    Original     		PDF 16bit MC68EZ328) EZ68328ADS TC554161FTL-85 TC554161FTL fff104 fff114 fff116 74HC08 74HC04 application note 74HC04 74HC04 NOT GATE datasheet FREESCALE date code table TC55416FTL MC68EZ328

    74HC08

    Abstract: 74HC04 application note 74HC04 NOT GATE datasheet 74HC04 74HC04 Toshiba MC68EZ328 a5d5 yc 428 TC554161FTL TC554161FTL-85
    Text: Order this document by TBD Date: 11/12/98 DragonBall Operation Preliminary Application Note 16bit SRAM Interface INTRODUCTION This note describes the method of interfacing a 16bit SRAM to DragonBall-EZ MC68EZ328 . The interface is simply constructed by discrete logic gates.


    Original     		PDF 16bit MC68EZ328) EZ68328ADS TC554161FTL-85 TC554161FTL fff104 fff114 fff116 74HC08 74HC04 application note 74HC04 NOT GATE datasheet 74HC04 74HC04 Toshiba MC68EZ328 a5d5 yc 428

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC554161 FTL-70V TC554161 FTL-85V TC554161 FTL-10V SILICON GATE CMOS DATA 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION TENTATIVE DATA The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		PDF TC554161 FTL-70V FTL-85V FTL-10V 144-WORD 16-BIT TC554161FTL 304-bit

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A T C 55 4161 FTL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


    OCR Scan     		PDF FTL-70 144-WORD 16-BIT TC554161FTL 304-bit 54-P-400-0

    TC554161FTL

    Abstract: No abstract text available
    Text: TOSHIBA TC554161 FTL-70#-85#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


    OCR Scan     		PDF TC554161 FTL-70 144-WORD 16-BIT TC554161FTL 304-bit

    TC554161FTL

    Abstract: No abstract text available
    Text: TOSHIBA TC554161 FTL-70V#-85V#-1OV TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 3 to


    OCR Scan     		PDF TC554161 FTL-70V 144-WORD 16-BIT TC554161FTL 304-bit

    TC554161FTL

    Abstract: FTL-70L
    Text: TOSHIBA TC554161 FTL-70L#-85L#-1OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


    OCR Scan     		PDF TC554161 FTL-70L 144-WORD 16-BIT TC554161FTL 304-bit enabC554161

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC554161 FTL-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


    OCR Scan     		PDF 144-WORD 16-BIT TC554161 FTL-70L TC554161FTL 304-bit 54-P-400-0 62MAX

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC554161 FTL-70V,-85V,-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 3 to


    OCR Scan     		PDF TC554161 FTL-70V 144-WORD 16-BIT TC554161FTL 304-bit 54-P-400-0 62MAX

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC554161FTL-70/85 PRELIMINARY SILICON GATE CMOS 262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL is a 4,194,304 bits static random access memory organized as 262,144 w ords by 16 bits using CMOS tech­ nology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features


    OCR Scan     		PDF TC554161FTL-70/85 TC554161FTL SR04010795 TSOP54-P-400

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC554161FTL-70L/85L PRELIMINARY SILICON GATE CMOS 262,144 WORD x 16 BIT STATIC RAM Description TC554161FTL is a 4,194,304 bit static random access memory organized as 262,144 words by 16 bits using CMOS technol­ ogy, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features


    OCR Scan     		PDF TC554161FTL-70L/85L TheTC554161FTL 10mA/MHz TC554161FTL SR04020795 TSOP54-P-400

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC554161 FTL-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


    OCR Scan     		PDF TC554161 FTL-70L 144-WORD 16-BIT TC554161FTL 304-bit 54-P-400-0

    TC554161FTL

    Abstract: 1014T
    Text: TOSHIBA TC 554161 FTL-70V#-8 5 V #-1 OV TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		PDF TC554161 FTL-70V 144-WORD 16-BIT TC554161FTL 304-bit 54-P-400-0 1014T

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE TC554161 FTL-70V,-85V,-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		PDF TC554161 FTL-70V 144-WORD 16-BIT TC554161FTL 304-bit 54-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC554161FTL-70/85 SILICON GATE CMOS PRELIMINARY 262,144 WORD x 16 BIT STATIC RAM Description TC554161FTL is a 4,194,304 bits static random access memory organized as 262,144 words by 16 bits using CMOS technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low


    OCR Scan     		PDF TC554161FTL-70/85 TheTC554161FTL 10mA/MHz TC554161FTL S0S724S SR04010795 TSOP54-P-400 SDS724Ã

    TC554161

    Abstract: TSOP-54P TSOP54-P-400 TC554161FTL-85L
    Text: INTEGRATED "OSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC554161 FTL-70L TC554161FTL-85L TC554161 FTL-10L DATA SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16


    OCR Scan     		PDF TC554161 FTL-70L TC554161FTL-85L FTL-10L TC554161FTL 304-bit TC554161FTL-L--8 TSOP-54P TSOP54-P-400 TC554161FTL-85L

    TC554161FTL

    Abstract: No abstract text available
    Text: TO SHIBA TC554161 FTL-70#-85#-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


    OCR Scan     		PDF TC554161 FTL-70 144-WORD 16-BIT TC554161FTL 304-bit

    TC554161FTL

    Abstract: TSOP 54 Package used in where
    Text: TOSHIBA TC554161 FTL-70L#-85L#-1OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 5 V


    OCR Scan     		PDF TC554161 FTL-70L 144-WORD 16-BIT TC554161FTL 304-bit TSOP 54 Package used in where

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC554161FTL/TRL-70/85/10 PRELIMINARY SILICON GATE CMOS 262,144 WORD x 16 BIT STATIC RAM Description T h e T C 5 5 4 1 6 1 FTL/TR L is a 4 ,1 9 4 ,3 0 4 bit C M O S static random acce ss m em ory organized as 2 6 2 ,1 4 4 w o rd s by 16 bits and operated from a single 5V p o w e r supply. A dvan ced circuit tech nique s provide b o th high speed and lo w p o w e r features w ith an


    OCR Scan     		PDF TC554161FTL/TRL-70/85/10 10OpA H724B

    Untitled

    Abstract: No abstract text available
    Text: TC554161FIL-70L/85L PRELIMINARY SILICON GATE CMOS Standard sMtir. RAM TOSHIBA 262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL is a 4,194,304 bit static random access memory organized as 262,144 words by 16 bits using C M O S technology, and operated from a single 5V power supply. Advanced circuit techniques provide both high_speed and low


    OCR Scan     		PDF TC554161FIL-70L/85L TC554161FTL 10mA/MHz TC554161

    Untitled

    Abstract: No abstract text available
    Text: TC554161FIL-70V/85V PRELIMINARY Standard SI it r. RAf.* TOSHIBA SILICON GATE CMOS 262,144 WORD x 16 BIT STATIC RAM Description TC554161FTL is a 4,194,304 bits static random access memory organized as 262,144 words by 16 bits a using CMOS technology, and operated from a single 3.0 ~ 5.5V power supply. Advanced circuit techniques provide both hig h _


    OCR Scan     		PDF TC554161FIL-70V/85V TheTC554161FTL 10mA/MHz TC554161FTL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC554161FIL/TRL-70/85/10 SILICON GATE CMOS PRELIMINARY 262,144 WORD x 16 BIT STATIC RAM Description TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an


    OCR Scan     		PDF TC554161FIL/TRL-70/85/10 TheTC554161FTL/TRL 10mA/MHz TC554161FTLTRL TC554161FTL/TRL-70/85/10

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC 554161FTL/TR L-70I785L/10L SILICON GATE CMOS PRELIMINARY 262,144 WORD x 16 BIT STATIC RAM Description TC554161FTLyTRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an


    OCR Scan     		PDF 554161FTL/TR L-70I785L/10L TheTC554161FTLyTRL 10mA/MHz TC554161FTL/TRL TC554161FTL/TRL-70L/85L/1OL