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    Toshiba America Electronic Components

    Toshiba America Electronic Components TC58512FTI

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    Bristol Electronics TC58512FTI 120
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    Quest Components TC58512FTI 63
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    TC58512FTI 54
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    TC58512FTI Datasheets (2)

    Part
    ECAD Model
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    Description
    Curated
    Datasheet Type
    PDF
    TC58512FTI Toshiba 512 MBit (64M x 8 Bit) CMOS NAND E2PROM Original PDF
    TC58512FTI(EL) Toshiba EEPROM Serial, 512Mbits Density, 3.3V Supply, Tape and Reel Original PDF

    TC58512FTI Datasheets Context Search

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    TC58512FTI

    Abstract: tc58512 DIN527
    Text: TC58512FTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 512-MBIT 64M x 8 BITS CMOS NAND E PROM DESCRIPTION The TC58512 is a single 3.3 V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte


    Original     		TC58512FTI 512-MBIT TC58512 528-byte 528-byte TC58512FTI DIN527 PDF

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION Function E2PROM CMOS Type J 1/1 E TC58512FTI Model AVIC-T1 NC 1 48 NC NC 2 47 NC NC 3 46 NC NC 4 45 NC NC 5 44 I/O8 GND 6 43 I/O7 RY/BY 7 42 I/O6 RE 8 CE 9 NC 10 NC 11 VCC 12 VSS 13 NC 14 NC 15 CLE I/O : Address, Data, Command input/output CE : Chip enable input


    Original     		TC58512FTI PDF