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    TE215N10E

    Abstract: te215n10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's D ata S h ee t M TE215N10E ISOTOP™ TM O S E -FE T ™ P o w er Field E ffe c t Tran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is ad v a n c e d high v o lta g e TM O S E -F E T is d e sig n e d to


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    55L Power Mosfet

    Abstract: AN569 MTE215N10E transistor mj 1503 motorola
    Text: MOTOROLA Order this document by TE215N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TE215N10E ISOTOP™ TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to


    OCR Scan     		PDF MTE215N10E/D OT-227B 55L Power Mosfet AN569 MTE215N10E transistor mj 1503 motorola