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    TN2504N8 Search Results

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    TN2504N8 Price and Stock

    Microchip Technology Inc TN2504N8-G

    MOSFET N-CH 40V 890MA TO243AA
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    DigiKey TN2504N8-G Digi-Reel 11,851 1
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    TN2504N8-G Cut Tape 11,851 1
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    TN2504N8-G Reel 10,000 2,000
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    Verical TN2504N8-G 2,000 500
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    Onlinecomponents.com TN2504N8
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    Supertex Inc TN2504N8

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    Bristol Electronics TN2504N8 1,760 3
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    Quest Components TN2504N8 1,408
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    ComSIT USA TN2504N8 555
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    Supertex Inc TN2504N8-G

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    TN2504N8 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN2504N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2504N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TN2504N8-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 0.89A SOT89-3 Original PDF

    TN2504N8 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TN2504

    Abstract: TN2504N8 TN2504ND TO-243AA
    Text: TN2504 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die† 40V 1.0Ω 1.6V 4.0A TN2504N8 TN2504ND *Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


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    TN2504 O-243AA* TN2504N8 TN2504ND OT-89. O-243AA: 125pF TN2504 TN2504N8 TN2504ND TO-243AA PDF

    tn5l

    Abstract: TN2504 TN2504N8 TN2504ND
    Text: TN2504 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die† 40V 1.0Ω 1.6V 4.0A TN2504N8 TN2504ND *Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


    Original
    TN2504 O-243AA* TN2504N8 TN2504ND OT-89. O-243AA: 125pF tn5l TN2504 TN2504N8 TN2504ND PDF

    TN2504

    Abstract: TN2504N8 TN2504ND
    Text: TN2504 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* Die† 40V 1.0Ω 1.6V 4.0A TN2504N8 TN2504ND *Same as SOT-89. Product supplied on 2000 piece carrier tape reels.


    Original
    TN2504 O-243AA* TN2504N8 TN2504ND OT-89. TN2504 TN2504N8 TN2504ND PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN2504 125pF DSFP-TN2504 A091208 PDF

    TO243AA

    Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
    Text: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G


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    2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G TO243AA TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB PDF

    fet sot-89 marking code

    Abstract: FET SOT-89 N-Channel tn5l fet sot-89 product marking MARKING CODE BV sot-89 TN2504
    Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN2504 125pF DSFP-TN2504 A012409 fet sot-89 marking code FET SOT-89 N-Channel tn5l fet sot-89 product marking MARKING CODE BV sot-89 TN2504 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    DN2540N5

    Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
    Text: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5


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    2N7000 2N7002 2N7008 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5 DN2540N5 HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3 PDF

    TN2504

    Abstract: SOT89 FET marking TN5LW
    Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


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    TN2504 125pF TN2504 O-243AA OT-89) O-243, DSFP-TN2504 A122707 SOT89 FET marking TN5LW PDF

    TN0602N3

    Abstract: TN2504N8 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT rechargeable battery charging efficiency 007C 1N4001 LM393N 500mAH LM393N battery "lead acid"
    Text: TN06 Series Application Note AN–D9 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction cells in series, is being charged with a current set by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly


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    TN2504N8) TN0602N3) TN0602N3 TN2504N8 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT rechargeable battery charging efficiency 007C 1N4001 LM393N 500mAH LM393N battery "lead acid" PDF

    TN0602N3

    Abstract: BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT diode 1N4001 voltage limitations 1n4001 family INTRINSIC SAFE CIRCUIT 2k resistor 2 watt datasheet 6.8V lead gel battery 007C 1N4001
    Text: TN06 Series Application Note AN–D9 3 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction cells in series, is being charged with a current set by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly


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    TN2504N8) TN0602N3) TN0602N3 BATTERY CHARGE DISCHARGE INDICATOR CIRCUIT diode 1N4001 voltage limitations 1n4001 family INTRINSIC SAFE CIRCUIT 2k resistor 2 watt datasheet 6.8V lead gel battery 007C 1N4001 PDF

    PLCC-6 5050

    Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
    Text: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case


    Original
    SA146RS PLCC-6 5050 P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage


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    TN2504 125pF DSFP-TN2504 A012409 PDF

    "lead acid" battery monitor

    Abstract: lead gel battery BATTERY AA discharge test blown fuse indicator
    Text: TN06 Series Application Note AN–D9 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction The simple battery backup circuit shown in Figure 1 utilizes Supertex low threshold DMOS devices to achieve excellent efficiency. cells in series, is being charged with a current set by R8 and the


    Original
    PDF

    INTRINSIC SAFE CIRCUIT

    Abstract: lead gel battery 007C 1N4001 LM393N TN0604N3 TN2504N8
    Text: TN06 Series Application Note AN–D9 Battery Back-Up Utilizes Low Threshold MOSFETs Introduction The simple battery backup circuit shown in Figure 1 utilizes Supertex low threshold DMOS devices to achieve excellent efficiency. cells in series, is being charged with a current set by R8 and the


    Original
    PDF

    HV50530PG

    Abstract: hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3
    Text: SUPERTEX INC - OBSOLETE PRODUCT LISTING [JANUARY 2011] Obsolete Part Number 2N6659 2N7007 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3 DN2624N3 DN2625K6-G DN2635N3 DN2640N3 HV110K4-G HV111K4 HV1516P HV1616P HV1616PJ HV1816P HV1816PJ HV20220GA HV20220P


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    2N6659 2N7007 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3 DN2624N3 DN2625K6-G HV50530PG hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3 PDF

    tn2504n8-g

    Abstract: tn5lw
    Text: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original
    TN2504 125pF DSFP-TN2504 A111908 tn2504n8-g tn5lw PDF

    diode 1N4001 voltage limitations

    Abstract: lead gel battery 007C 1N4001 LM393N TN0604N3 TN2504N8 AN-D09 INTRINSIC SAFE CIRCUIT AA battery R6
    Text: AN-D09 Application Note Battery Back-Up Utilizing Low Threshold MOSFETs Introduction by R8 and the intrinsic drain to source diode of Q2. For fully discharged batteries, there will be a high charge current for a few seconds, rapidly decaying to a slow charge.


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    AN-D09 diode 1N4001 voltage limitations lead gel battery 007C 1N4001 LM393N TN0604N3 TN2504N8 AN-D09 INTRINSIC SAFE CIRCUIT AA battery R6 PDF

    TN25L

    Abstract: No abstract text available
    Text: ^ Supertex me. T N 25 L Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B Vdss / ^DS O N ^G S fth ) • d (ON) b v dgs (max) (max) (min) 20V 1.0Q 1.6V 4.0 A 40V 1.0CÌ 1.6V 4.0A Order Number / Package TO-243AA*TN2504N8


    OCR Scan
    O-243AA* TN2502ND TN2504ND TN2504N8 OT-89. TN25L PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2504 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON VGS(th) ' d (ON) BVoos (max) (max) (min) TO-243AA* Diet 40V i.o n 1.6V 4.0A TN2504N8 TN2504ND 'S a m e as SOT-89. Product supplied on 2000 piece ca rrier tape reels.


    OCR Scan
    TN2504 O-243AA* TN2504N8 TN2504ND OT-89. 125pF PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2504 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet 40V 1.0& 1.6V 4.0A TN2504N8 TN2504ND *S am e as SO T-89. P roduct supplied on 2000 piece ca rrie r tape reels.


    OCR Scan
    TN2504 O-243AA* TN2504N8 TN2504ND 125pF PDF

    VP1304N2

    Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
    Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND


    OCR Scan
    2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ TN2502 Supertex ine. TN2504 Low T hresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ ^D S O N ^ G S (th | I d (ON) b v dgs (max) (max) (min) TO-243AA* DICEt 20V 1.0Q 1.6V 4.0A — TN2502ND 40V 1.0Q


    OCR Scan
    TN2502 O-243AA* TN2504N8 TN2502ND TN2504ND OT-89. struc10 TN2502/TN2504 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ TN25L Supertex inc. Low T hre sho ld P re lim in a ry N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information T Order Number / Package b v dss / ^DS ON V g S(Ui) ^D(ON) b v dgs (max) (max) (min) TO-243AA* DICEt 20V i.on 1.6V 4.0A — TN2502ND


    OCR Scan
    TN25L O-243AA* TN2504N8 TN2502ND TN2504ND OT-89. 500mA. 300ms PDF