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    STMicroelectronics TN3015H-6I

    SCR 600V 30A TO220AB
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    Diotec Semiconductor AG MMFTN3018W

    MOSFET SOT323 N 30V 8OHM 150C
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    STMicroelectronics TN3015H-6T

    SCR 600V 30A TO220AB
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    Newark TN3015H-6T Bulk 1
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    Rochester Electronics TN3015H-6T 2,000 1
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    Avnet Silica TN3015H-6T 4,000 16 Weeks 50
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    STMicroelectronics TN3015H-6G

    SCR 600MV 30A D2PAK
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    DigiKey TN3015H-6G Tube 262 1
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    Mouser Electronics TN3015H-6G 689
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    STMicroelectronics TN3015H-6G 689 1
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    TME TN3015H-6G 62 1
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    Avnet Silica TN3015H-6G 1,000 16 Weeks 50
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    Rochester Electronics LLC TN3019A

    TRANS NPN 80V 1A TO226-3
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    DigiKey TN3019A Bulk 2,049
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    TN301 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN301 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    TN3012L Vishay Siliconix MOSFETs Original PDF
    TN3012L-TR1 Vishay Transistor Mosfet N-CH 300V 0.18A 3TO-226AA T/R Original PDF
    TN3015H-6G STMicroelectronics SCR 600MV 30A D2PAK Original PDF
    TN3015H-6I STMicroelectronics SCR 600MV 30A TO220AB Original PDF
    TN3015H-6T STMicroelectronics SCR 600MV 30A TO220AB Original PDF
    TN3019 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    TN3019 Central Semiconductor Power Transistors TO-237 Case Scan PDF
    TN3019 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    TN3019 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    TN3019 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    TN3019 Micro Electronics Semiconductor Device Data Book Scan PDF
    TN3019 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    TN3019 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    TN3019 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    TN3019 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    TN3019 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TN3019 National Semiconductor General Purpose Amplifiers and Switches Scan PDF
    TN3019 National Semiconductor Transistors Scan PDF
    TN3019 National Semiconductor NPN Medium Power Transistors Scan PDF

    TN301 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode 27c

    Abstract: TN3012L b0704
    Text: TN3012L Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary V BR DSS Min (V) rDS(on) Max (W) 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V VGS(th) (V) ID (A) 0.8 to 3 0.18 Features Benefits Applications D D D D D D D D D D D HighĆVoltage Drivers: Relays, Solenoids,


    Original
    TN3012L O226AA O226AA) P-37409--Rev. diode 27c TN3012L b0704 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original
    BC337-16 BC337-25 BC337-16 TN3019A PDF

    TN3012L

    Abstract: 70206
    Text: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,


    Original
    TN3012L O-226AA O-226AA) S-04279--Rev. 16-Jul-01 TN3012L 70206 PDF

    CEB120

    Abstract: No abstract text available
    Text: TN3019A TN3019A C B TO-226 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*


    Original
    TN3019A O-226 CEB120 PDF

    transistor TD-100 le

    Abstract: pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box
    Text: TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*


    Original
    TN3019A O-226 transistor TD-100 le pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box PDF

    OF TRANSISTOR BC337

    Abstract: TRANSISTOR BC337-25 transistor 33725 TN3019A bc337 m transistor BC337-16 BC337-16 BC337-25 CBVK741B019 F63TNR
    Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original
    BC337-16 BC337-25 BC337-16 TN3019A OF TRANSISTOR BC337 TRANSISTOR BC337-25 transistor 33725 bc337 m transistor BC337-16 BC337-25 CBVK741B019 F63TNR PDF

    Untitled

    Abstract: No abstract text available
    Text: TN3012 / SN3012 Amplifier Performance Datasheet Cross Reference Guide TN3012 / SN3012* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 200.0 - 450.0 MHz Gain 22.0 dB Typical 21.0 dB Min Noise Figure 3.2 dB Typical


    Original
    TN3012 SN3012 SN3012* M3012 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original
    BC337-16 BC337-25 BC337-16 TN3019A PDF

    Untitled

    Abstract: No abstract text available
    Text: TN3012 / SN3012 Amplifier Performance Datasheet Cross Reference Guide TN3012 / SN3012* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 200.0 - 450.0 MHz Gain 22.0 dB Typical 21.0 dB Min Noise Figure 3.2 dB Typical


    Original
    TN3012 SN3012 SN3012* TM3012 PDF

    to-226aa

    Abstract: TN3012L
    Text: TN3012L N-Channel Enhancement-Mode MOS Transistors Product Summary V BR DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V VGS(th) (V) ID (A) 0.8 to 3 0.18 20 @ VGS = 4.5 V Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,


    Original
    TN3012L O-226AA O-226AA) P-37409--Rev. 04-Jul-94 to-226aa TN3012L PDF

    TN3012L

    Abstract: No abstract text available
    Text: TN3012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V VGS(th) (V) ID (A) 0 8 to 3 0.8 0 18 0.18 20 @ VGS = 4.5 V Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,


    Original
    TN3012L O-226AA O-226AA) P-37409--Rev. 04-Jul-94 TN3012L PDF

    TN3019A

    Abstract: No abstract text available
    Text: TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*


    Original
    TN3019A O-226 TN3019A PDF

    FP3011

    Abstract: No abstract text available
    Text: Available as: RF AMPLIFIER MODEL TM3011 TM3011, 4 Pin TO-8 T4 TN3011, 4 Pin Surface Mount (SM3) FP3011, 4 Pin Flatpack (FP4) BX3011, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +49 dBm (Typ.)


    Original
    TM3011 TM3011, TN3011, FP3011, BX3011, FP3011 PDF

    bc337 cross-reference

    Abstract: bc337-16 bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross
    Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*


    Original
    BC337-16 BC337-25 TN3019A BC337 BC33716TA BC33716BU bc337 cross-reference bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross PDF

    Untitled

    Abstract: No abstract text available
    Text: TN3010 / SN3010 Amplifier Performance Datasheet Cross Reference Guide TN3010 / SN3010* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 5.0 - 500.0 MHz Gain 30.0 dB Typical 28.0 dB Min Noise Figure 3.5 dB Typical


    Original
    TN3010 SN3010* PDF

    TN3019A

    Abstract: No abstract text available
    Text: TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*


    Original
    TN3019A O-226 TN3019A PDF

    Untitled

    Abstract: No abstract text available
    Text: RF AMPLIFIER MODEL TM3012 Available as: TM3012, 4 Pin TO-8 T4 TN3012, 4 Pin Surface Mount (SM3) FP3012, 4 Pin Flatpack (FP4) BX3012, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C „High Gain: 22 dB Typical „Output Power: +14 dBm Typical


    Original
    TM3012 MIL-STD-883 TM3012, TN3012, FP3012, BX3012, ----S11---Mag ----S21---Mag ----S12---Mag ----S22---Mag PDF

    TN3012L

    Abstract: No abstract text available
    Text: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,


    Original
    TN3012L O-226AA 18-Jul-08 TN3012L PDF

    Untitled

    Abstract: No abstract text available
    Text: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS M in (v ) fDSion) Max (Q ) 12 0 V q s 300 20 a Vqs = 4.5 V Id (A) 0.8 to 3 0.18 BENEFITS FEATURES • • • • • VGS(.h)(V) = 1OV APPLICATIONS Low On-Resistance: 9 Q • Low Offset Voltage


    OCR Scan
    TN3012L O-226AA S-04279-- 16-Jul-01 O-226AA) PDF

    mpsa06 539

    Abstract: No abstract text available
    Text: ¿2h STtiGhGG O E T ia ^ I NPN Transistors a Discrete POWER & Signal Technologies National NPN Medium Power ¡'«icond.cor- V Device No. Case Style PN3568 TO-92 92 TN3019A TO-226 (99) MPS80S CBO VCEO V EBO (V) Min (V) Min (V) Min 80 60 5 140 80 7 <nA)@ "


    OCR Scan
    PN3568 MPS80S MPSA05 MPSA06 TN5320A TN3440A TN6714A O-226 mpsa06 539 PDF

    Untitled

    Abstract: No abstract text available
    Text: Tem ic TN3012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS M in (V) r DS<on) M a x (Q ) ^GSrth) (V) I d (A) 0.8 to 3 0.18 12@ V GS= 1 0 V 300 20 @ VGS * 4.5 V Features Benefits • • • • • •


    OCR Scan
    TN3012L -226A P-37409--Rev. 04-Jul-94 PDF

    TN3019

    Abstract: 2N3019
    Text: 2N3019/TN3019 National Semiconductor 2N3019 TN3019 NPN General Purpose Amplifier Electrical Characteristics T a = 25°C unless otherw ise noted Symbol Min Parameter Max Units OFF CHARACTERISTICS V BR CEO C ollector-E m itter Breakdow n Voltage, (N ote 1) (lc = 30 mAdc, lB = 0)


    OCR Scan
    2N3019/TN3019 2N3019 TN3019 TN3019 2N3019 PDF

    si167

    Abstract: No abstract text available
    Text: ggM C O N O U C TO R TN3019A NPN General Purpose Amplifier This device is designed for general purpose medium power am plifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. AbSOlUtG Maximum RâtinÇjS


    OCR Scan
    TN3019A si167 PDF

    Untitled

    Abstract: No abstract text available
    Text: H E M iQ Q N P U S T O R TN3019A TO-226 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum RatinQS


    OCR Scan
    TN3019A O-226 PDF