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    TN3012 Price and Stock

    TAIYO YUDEN RM04FTN3012

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    Bristol Electronics RM04FTN3012 10,001
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    Others TN3012L

    INSTOCK
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    Chip 1 Exchange TN3012L 1,240
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    VENKEL LTD HPTF1206-TN-3012DT

    High Power Thin Film CR;1206;1/4W;�10PPM;30.1K;�0.5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. HPTF1206-TN-3012DT Reel 5 Weeks, 5 Days 5,000
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    VENKEL LTD HPTF1206-TN-3012UT

    High Power Thin Film CR;1206;1/4W;�10PPM;30.1K;�0.01%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. HPTF1206-TN-3012UT Reel 5 Weeks, 5 Days 5,000
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    VENKEL LTD HPTF1206-TN-3012BT

    High Power Thin Film CR;1206;1/4W;�10PPM;30.1K;�0.1%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Venkel Ltd. HPTF1206-TN-3012BT Reel 5 Weeks, 5 Days 5,000
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    TN3012 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN3012L Vishay Siliconix MOSFETs Original PDF
    TN3012L-TR1 Vishay Transistor Mosfet N-CH 300V 0.18A 3TO-226AA T/R Original PDF

    TN3012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode 27c

    Abstract: TN3012L b0704
    Text: TN3012L Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary V BR DSS Min (V) rDS(on) Max (W) 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V VGS(th) (V) ID (A) 0.8 to 3 0.18 Features Benefits Applications D D D D D D D D D D D HighĆVoltage Drivers: Relays, Solenoids,


    Original     		PDF TN3012L O226AA O226AA) P-37409--Rev. diode 27c TN3012L b0704

    TN3012L

    Abstract: 70206
    Text: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,


    Original     		PDF TN3012L O-226AA O-226AA) S-04279--Rev. 16-Jul-01 TN3012L 70206

    Untitled

    Abstract: No abstract text available
    Text: TN3012 / SN3012 Amplifier Performance Datasheet Cross Reference Guide TN3012 / SN3012* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 200.0 - 450.0 MHz Gain 22.0 dB Typical 21.0 dB Min Noise Figure 3.2 dB Typical


    Original     		PDF TN3012 SN3012 SN3012* M3012

    Untitled

    Abstract: No abstract text available
    Text: TN3012 / SN3012 Amplifier Performance Datasheet Cross Reference Guide TN3012 / SN3012* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 200.0 - 450.0 MHz Gain 22.0 dB Typical 21.0 dB Min Noise Figure 3.2 dB Typical


    Original     		PDF TN3012 SN3012 SN3012* TM3012

    to-226aa

    Abstract: TN3012L
    Text: TN3012L N-Channel Enhancement-Mode MOS Transistors Product Summary V BR DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V VGS(th) (V) ID (A) 0.8 to 3 0.18 20 @ VGS = 4.5 V Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,


    Original     		PDF TN3012L O-226AA O-226AA) P-37409--Rev. 04-Jul-94 to-226aa TN3012L

    TN3012L

    Abstract: No abstract text available
    Text: TN3012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V VGS(th) (V) ID (A) 0 8 to 3 0.8 0 18 0.18 20 @ VGS = 4.5 V Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,


    Original     		PDF TN3012L O-226AA O-226AA) P-37409--Rev. 04-Jul-94 TN3012L

    TN3012L

    Abstract: No abstract text available
    Text: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,


    Original     		PDF TN3012L O-226AA 08-Apr-05 TN3012L

    Untitled

    Abstract: No abstract text available
    Text: RF AMPLIFIER MODEL TM3012 Available as: TM3012, 4 Pin TO-8 T4 TN3012, 4 Pin Surface Mount (SM3) FP3012, 4 Pin Flatpack (FP4) BX3012, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C „High Gain: 22 dB Typical „Output Power: +14 dBm Typical


    Original     		PDF TM3012 MIL-STD-883 TM3012, TN3012, FP3012, BX3012, ----S11---Mag ----S21---Mag ----S12---Mag ----S22---Mag

    TN3012L

    Abstract: No abstract text available
    Text: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,


    Original     		PDF TN3012L O-226AA 18-Jul-08 TN3012L

    TN3012L

    Abstract: No abstract text available
    Text: TN3012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V VGS(th) (V) ID (A) 0.8 to 3 0.18 20 @ VGS = 4.5 V Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,


    Original     		PDF TN3012L O-226AA O-226AA) P-37409--Rev. 04-Jul-94 TN3012L

    One-chip telephone IC

    Abstract: telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU
    Text: TEMIC Semiconductors Communication Segment Digital Networks Wireless Communication Wired Communication Communication We’ve been supporting advances in communications industry for decades. Today, we continue to offer the best combination of applications knowledge and leading-edge solutions required by the


    Original     		PDF 29C93A 102/V V25bis) PQFP44 29C93A 29C921 80C51 One-chip telephone IC telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    TM3012

    Abstract: FP3012
    Text: RF AMPLIFIER MODEL TM3012 Available as: Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point.+43 dBm Typ. Second Order Two Tone Intercept Point.+36 dBm (Typ.) Third Order Two Tone Intercept Point.+27 dBm (Typ.)


    Original     		PDF TM3012 MIL-STD-883 TM3012, TN3012, FP3012, BX3012, ----S11---Mag ----S21---Mag ----S12---Mag ----S22---Mag TM3012 FP3012

    Untitled

    Abstract: No abstract text available
    Text: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS M in (v ) fDSion) Max (Q ) 12 0 V q s 300 20 a Vqs = 4.5 V Id (A) 0.8 to 3 0.18 BENEFITS FEATURES • • • • • VGS(.h)(V) = 1OV APPLICATIONS Low On-Resistance: 9 Q • Low Offset Voltage


    OCR Scan     		PDF TN3012L O-226AA S-04279-- 16-Jul-01 O-226AA)

    Untitled

    Abstract: No abstract text available
    Text: Tem ic TN3012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS M in (V) r DS<on) M a x (Q ) ^GSrth) (V) I d (A) 0.8 to 3 0.18 12@ V GS= 1 0 V 300 20 @ VGS * 4.5 V Features Benefits • • • • • •


    OCR Scan     		PDF TN3012L -226A P-37409--Rev. 04-Jul-94

    Untitled

    Abstract: No abstract text available
    Text: T e m ic TN3012L_ Siliconix N-Channel Enhancement-Mode MOSFET Product Summary V BR DSS Min (V) Max (£2) 12 @ VGS = 10 V 20 @ VGs = 4.5 V rDS(on) 300 Features • • • • • Low On-Resistance: 9 Q Secondary Breakdown Free: 320 V Low Power/Voltage Driven


    OCR Scan     		PDF TN3012L_ O-226AA 37409--Rev. TN3012L P-37409--Rev.

    pj 89 diode

    Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
    Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­


    OCR Scan     		PDF O-220 O-243 OT-89) OT-23 20-Terminal pj 89 diode LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89