Untitled
Abstract: No abstract text available
Text: TPC8302 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI TPC8302 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications 2.5-V Gate drive Small footprint due to small and thin package
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TPC8302
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Untitled
Abstract: No abstract text available
Text: TPC8302 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI TPC8302 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l 2.5 V Gate drive l Small footprint due to small and thin package l Low drain−source ON resistance: RDS (ON) = 100 mΩ (typ.)
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TPC8302
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Untitled
Abstract: No abstract text available
Text: TPC8302 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI TPC8302 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm 2.5 V Gate drive Low drain−source ON resistance: RDS (ON) = 100 mΩ (typ.)
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TPC8302
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TPC8302
Abstract: No abstract text available
Text: TPC8302 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI TPC8302 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm 2.5 V Gate drive Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 100 mΩ (typ.)
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TPC8302
TPC8302
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TPC8302
Abstract: MARKING 3b
Text: TPC8302 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI TPC8302 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l 2.5 V Gate drive l Small footprint due to small and thin package l Low drain−source ON resistance: RDS (ON) = 100 mΩ (typ.)
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TPC8302
TPC8302
MARKING 3b
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TPC8302
Abstract: No abstract text available
Text: TPC8302 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI TPC8302 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm 2.5 V Gate drive Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 100 mΩ (typ.)
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TPC8302
TPC8302
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Untitled
Abstract: No abstract text available
Text: TPC8302 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI TPC8302 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z 2.5-V Gate drive z Small footprint due to small and thin package
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TPC8302
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Untitled
Abstract: No abstract text available
Text: TPC8302 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSVI TPC8302 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm 2.5 V Gate drive Low drain−source ON resistance: RDS (ON) = 100 mΩ (typ.)
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TPC8302
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3
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RFP6N50
RFD16N03LSM
RFP15N05L
RFP50N05
RFP15N05
RFP50N05L
RFD14N05L
RFD14N05LSM
RFD14N05SM
RFP14N05L
IRF540 complementary
IRFZ44N complementary
std2n52
TOSHIBA IRFZ44A datasheet
STP2NA60
SSH6N80
rfp60n06
ste38na50
IRF630 complementary
IRF3205 IR
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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2SK3566 equivalent
Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017E
S-167
BCE0017F
2SK3566 equivalent
2SK3562 equivalent
2SK3561 equivalent
2SK3878 equivalent
2SK3568 equivalent
2SK3911 equivalent
2SK941 equivalent
tpc8118 equivalent replacement
tpc8118
2SK3767 equivalent
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K2057
Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
Text: 2003-5 BCE0017A PRODUCT GUIDE Power MOSFETs 2003 http://www.semicon.toshiba.co.jp/eng 2 C 1 2 3 4 O N T E N Features and Structure New Power MOSFET Products Selection Guide Power MOSFET Characteristics 1. SOP-8 Series 2. VS-6 / 8 Series, PS-8 Series 3. TFP Thin Flat Package Series
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BCE0017A
2SK2610)
2SK794)
K2057
toshiba k2057
tpc8107 equivalent
2SK2313 equivalent
2SK794
2sK2750 equivalent
2SK2996 equivalent
2SK1379
2SK2610 equivalent
2SK3662
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2SK2056
Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
Text: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII
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2SJ147
O-220IS
2SJ183
2SJ200
2SJ201
2SJ224
O-220FL/SM
2SJ238
2SJ239
2SJ240
2SK2056
2SK1603
2SK1723
2sk1377
transistor 2SK1603
2SK2146
2SK2351
MOSFET 2sk1357
transistor 2sk1213
2SK2402
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2sk4110
Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
Text: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3
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BCE0017D
S-167
BCE0017E
2sk4110
2SK4106
2SK4111
2SK3561 equivalent
2sk3797 equivalent
2SK2996 equivalent
2SK2843 equivalent
2sK2961 equivalent
2SK4112
2SK3799 equivalent
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : RDS(ON) = 100m n (Typ.)
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TPC8302
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 RUHR" 2.5V Gate Drive. Low Drain-Source ON Resistance m O
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TPC8302
--20V)
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BYD 24
Abstract: No abstract text available
Text: TOSHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : Rd S (ON) - lOOmO (Typ.)
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TPC8302
20kil)
--16V,
BYD 24
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Untitled
Abstract: No abstract text available
Text: TO SH IB A TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V G ate Drive. Low D rain-Source ON Resistance : R d S (O N )= lOOmO (Typ.)
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TPC8302
200/iA)
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TPC8302
Abstract: Marking jf 2i
Text: TO SH IBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC SOP-8 PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : RßS (ON) = 100 mH (Typ.)
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TPC8302
TPC8302
Marking jf 2i
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : Rd S (ON) - lOOmO (Typ.)
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TPC8302
--20V)
20kil)
--16V,
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M05 TYPE L2- tt-MOSVI TPf«ift7 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : R d S (ON)= lOOmO (Typ.)
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TPC8302
----16V,
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