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    TPC8403 Search Results

    TPC8403 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TPC8403 Toshiba Metal oxide N/P-channel field effect transistor enh. Original PDF
    TPC8403 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    TPC8403 Toshiba Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) Original PDF
    TPC8403 Toshiba Field Effect Transistor Silicon N, P Channel MOS Type (U-MOS II) Scan PDF

    TPC8403 Datasheets Context Search

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    tpc8403

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Unit: mm Portable Equipment Applications • • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403 tpc8403

    TPC8403

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools Unit: mm • P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.)


    Original     		PDF TPC8403 TPC8403

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Unit: mm Portable Equipment Applications • • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403

    TPC8403

    Abstract: 5106a
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools Unit: mm • P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.) High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.)


    Original     		PDF TPC8403 TPC8403 5106a

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Portable Equipment Applications • Unit: mm Low drain-source ON resistance: • P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.)


    Original     		PDF TPC8403

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools • • Industrial Applications Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Drive Applications Notebook PC Applications Unit: mm Portable Equipment Applications • • Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)


    Original     		PDF TPC8403

    Untitled

    Abstract: No abstract text available
    Text: TPC8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSII/N Channel U-MOSII TPC8403 Motor Dreive Notebook PC Portable Machines and Tools • Unit: mm Low drain-source ON resistance: • P Channel RDS (ON) = 45 mΩ (typ.) N Channel RDS (ON) = 25 mΩ (typ.)


    Original     		PDF TPC8403

    tpc8107

    Abstract: tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002
    Text: Power MOSFETs TPC Series PRODUCT GUIDE Toshiba Power Compact Series devices have been developed for use in high-speed switching applications and in various interfaces. Toshiba has developed this high-efficiency low ON-resistance series using processes specially formulated to ensure that the devices can be used in


    Original     		PDF 3525C-0209 tpc8107 tpc8107 mosfet TPC8107 application circuit 7179 TPCS8210 application TPC8110 tpc8107 equivalent US6 KEC MAX1717 TPC6002

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


    Original     		PDF BCE0017B 2SK2056 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


    Original     		PDF 2SK2963 2SK2962 2SJ508 2SJ509 2SK3670 2SJ313 2SJ338 2SK2013 2SK2162 2SJ360 2SK3878 equivalent 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718

    2SK1603

    Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
    Text: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1


    Original     		PDF BCE0017A 2SK1603 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078

    K2057

    Abstract: toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662
    Text: 2003-5 BCE0017A PRODUCT GUIDE Power MOSFETs 2003 http://www.semicon.toshiba.co.jp/eng 2 C 1 2 3 4 O N T E N Features and Structure New Power MOSFET Products Selection Guide Power MOSFET Characteristics 1. SOP-8 Series 2. VS-6 / 8 Series, PS-8 Series 3. TFP Thin Flat Package Series


    Original     		PDF BCE0017A 2SK2610) 2SK794) K2057 toshiba k2057 tpc8107 equivalent 2SK2313 equivalent 2SK794 2sK2750 equivalent 2SK2996 equivalent 2SK1379 2SK2610 equivalent 2SK3662

    2sk4110

    Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
    Text: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3


    Original     		PDF BCE0017D S-167 BCE0017E 2sk4110 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    Power MOSFET, toshiba

    Abstract: toshiba f5d NPN S2e TOSHIBA "ULTRA HIGH SPEED" DIODE 1A TPCA8103 438B MOSFET TOSHIBA TPCP8402 Power MOSFET toshiba TPC6004
    Text: 2004-3 PRODUCT GUIDE Power MOSFETs TPC Series semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Power MOSFETs TPC Series CONTENTS 1. Overview. p.4-5 2. Features . p.6-15


    Original     		PDF BCE0019A BCE0019B Power MOSFET, toshiba toshiba f5d NPN S2e TOSHIBA "ULTRA HIGH SPEED" DIODE 1A TPCA8103 438B MOSFET TOSHIBA TPCP8402 Power MOSFET toshiba TPC6004

    2SK1603

    Abstract: 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855
    Text: Small-Signal MOSFETs Toshiba presents a range of small-signal MOSFET S-MOS devices developed for various switching and interface applications. The high-current S-MOS Family has been developed principally for high-current switching applications and has been added to the S-MOS product line. The devices which comprise this family exhibit ultra-low ON-resistance (RDS(ON) and


    Original     		PDF 3515C-0202 F-93561, 2SK1603 2SK2056 2SK1377 2SK1349 2sk2402 2SK1117 2SK1213 transistor 2SK1603 2SK423 2sk1855

    2sK2750 equivalent

    Abstract: equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238
    Text: 2004-3 PRODUCT GUIDE Power MOSFETs semiconductor 2004 http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structure .4 3. TFP Series .18 - 21


    Original     		PDF O-220SIS BCE0017A 2sK2750 equivalent equivalent 2sk2698 mosfet 2SK1603 2SK2996 equivalent 2SK3569 equivalent 2SK2056 2SK3565 equivalent MOSFET 2SK1358 Transistor Guide 2SK3567 equivalent 2SJ238

    tpc8403

    Abstract: No abstract text available
    Text: TOSHIBA TPC8403 TOSHIBA FIELD EFFECT TRANSISTOR MOTOR DRIVE NOTE BOOK PC PORTABLE DEVICES • • • • SILICON N, P CHANNEL MOS TYPE U-MOSII TPC8403 INDUSTRIAL APPLICATIONS Unit in mm SOP-8 Low Drain-Source ON Resistance : P CHANNEL Rj)g (QN) = mH (Typ.)


    OCR Scan     		PDF TPC8403 VDD-24V, tpc8403

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPC8403 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N, P CHANNEL MOS TYPE U -M O SII TPC8403 M OTOR DRIVE INDUSTRIAL APPLICATIONS U nit in mm NOTE BOOK PC SOP-8 PORTABLE DEVICES 8 • • 5 Hn HH Low Drain-Source ON Resistance : P CHANNEL R d S (ON) = 45


    OCR Scan     		PDF TPC8403

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TPC8403 TOSHIBA FIELD EFFECT TRANSISTOR MOTOR DRIVE NOTE BOOK PC PORTABLE DEVICES • • • • SILICON N, P CHANNEL MOS TYPE U-M OSII TPC8403 Low Drain-Source ON Resistance : P CHANNEL R n« rnivn = 45 mH (T vü .) N CHANNEL R d S (ON) = 25 mO (Typ.)


    OCR Scan     		PDF TPC8403