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    UES1301 Price and Stock

    Microchip Technology Inc UES1301

    DIODE GEN PURP 50V 6A B AXIAL
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    Microchip Technology Inc UES1301 398 24 Weeks
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    NAC UES1301 15
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    Microchip Technology Inc UES1301SM

    DIODE GEN PURP 50V 8A D-5B
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    Microchip Technology Inc UES1301SM 24 Weeks
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    NAC UES1301SM 9
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    Microchip Technology Inc UES1301-TR

    DIODE GEN PURP 50V 6A B AXIAL
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    Microchip Technology Inc UES1301SM-TR

    DIODE GEN PURP 50V 8A D-5B
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    DigiKey UES1301SM-TR Reel 100
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    Microchip Technology Inc UES1301SM/TR

    Diode Ultra Fast Recovery 50V 6A 2-Pin Case B T/R - Tape and Reel (Alt: UES1301SM/TR)
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    NAC UES1301SM/TR 9
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    Find more UES1301 price and stock on Findchips.com

    UES1301 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UES1301 BKC International 6 Amp Voidless Fast Switching Rectifiers Scan PDF
    UES1301 Microsemi Rectifiers, High Efficiency, 3.5A Scan PDF
    UES1301 Microsemi Rectifier Scan PDF
    UES1301 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    UES1301 Unitrode International Semiconductor Data Book 1981 Scan PDF

    UES1301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS UES1301-UES1303 HIGH EFFICIENCY RECTIFIERS 3.5 AMP MAXIMUM RATINGS Characteristics Symbol UES1301 UES1302 UES1303 Peak inverse voltage VR 50V 100V 150V Maximum average DC output at TL = 75°C, L = ⅜” IO 6.0A Non-repetitive surge current at 8.3ms


    Original     		PDF UES1301-UES1303 UES1301 UES1302 UES1303 MIL-PRF-19500,

    Untitled

    Abstract: No abstract text available
    Text: UES1301 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current6.0 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time30n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage925m @I(FM) (A) (Test Condition)6.0


    Original     		PDF UES1301 Voltage50 Time30n Voltage925m Current150u

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    1N5811

    Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
    Text: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization


    Original     		PDF CPD18 1N5807 1N5811 UES1301 UES1306 UES1401 UES1403 CUDD8-02 24-August 1N5811 CPD18 UES1306 UES1403

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    1N5811

    Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
    Text: PROCESS CPD18 Central Ultra Fast Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization


    Original     		PDF CPD18 1N5807 1N5811 UES1301 UES1306 UES1401 UES1403 CUDD8-02 19-September 1N5811 CPD18 UES1306 UES1403

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    1N5807

    Abstract: 1N5811 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
    Text: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 100 x 100 MILS Die Thickness 14 MILS Anode Bonding Pad Area 78 x 78 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization


    Original     		PDF CPD18 1N5807 1N5811 UES1301 UES1306 UES1401 UES1403 CUDD8-02 22-March 1N5811 CPD18 UES1306 UES1403

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    CTX12SL

    Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4


    Original     		PDF 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 CTX12SL CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200

    BKC Semiconductors

    Abstract: UES1303 UES1301 UES1302 DSAIH000251
    Text: 5 Amp Voidless Fast Switching Rectifiers UES1301 thru LI UES1303 V- Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. A fast high power, high voltage rectifier for industrial use with military reliability These parts are at home equally in satellite or heavy industrial power supplies


    OCR Scan     		PDF UES1301 UES1303 UES1301 UES1303 UES1306 BKC Semiconductors UES1302 DSAIH000251

    Untitled

    Abstract: No abstract text available
    Text: RECTIFIERS UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 High Efficiency, 3.5A FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are


    OCR Scan     		PDF UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 UES1301

    UES1301

    Abstract: UES1302 UES1303 FSM 12.5 BKC Semiconductors
    Text: 6 Amp Voidless Fast Applications Switching Rectifiers UES1301 thru UES1303 Hard Glass Tungsten For use in hostile environments such as military and aerospace. high power rectifier for i^u stifal use with military reliability, •■piiese parts ai« attiortia e^uaS^ Ih S a M te or heavy in^ystrial p^wer supplies.


    OCR Scan     		PDF UES1301 UES1303 UES1301 UES1302 UES1303 FSM 12.5 BKC Semiconductors

    ec66

    Abstract: 100-C UES1301 UES1302 UES1303 ec-66 ues1301-1303
    Text: RECTIFIERS UES1301-UES1303 High Efficiency, 6A DESCRIPTION Now power rectifiers in axial leaded package to meet the most demanding switching applications. An industrial product with military reliability. FEATURES • Very Low Forward Voltage • Very Fast Recovery Times


    OCR Scan     		PDF UES1301-UES1303 UES1301 UES1302 UES1303 10/xs 100ms ec66 100-C UES1301 UES1302 UES1303 ec-66 ues1301-1303

    UES1303

    Abstract: UESI301 6A, 100v fast recovery diode
    Text: RECTIFIERS UES1301 BYV28-50 UES1302 BYV28-100 LIES1303 BYV28-150 High Efficiency, 3.5A DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are required. FEATURES


    OCR Scan     		PDF UES1301 BYV28-50 UES1302 BYV28-100 LIES1303 BYV28-150 UES1303 BYV28-50 BYV28-100 UESI301 6A, 100v fast recovery diode

    6A, 100v fast recovery diode

    Abstract: UES1303 byv28 UES1300 BYV28-50 100-C BYV28-100 BYV28-150 UES1301 UES1302
    Text: UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 RECTIFIERS High Efficiency, 3.5A FEATU RES DESCRIPTION • • • • An axial leaded power rectifier useful in m any sw itching applications. Particu larly suited where very fast recovery and low forward voltage are


    OCR Scan     		PDF UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 6A, 100v fast recovery diode byv28 UES1300 100-C BYV28-150

    byv28

    Abstract: BYV28-50
    Text: RECTIFIERS UES1301 BYV28-50 U ES1302 BYV28-100 UES1303 BYV28-150 High Efficiency, 3.5A FEATURES DESCRIPTION • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package An axial leaded power rectifier useful in many switching applications.


    OCR Scan     		PDF UES1301 BYV28-50 ES1302 BYV28-100 UES1303 BYV28-150 UES1302 byv28

    Untitled

    Abstract: No abstract text available
    Text: SURFACE MOUNT RECTIFIERS UES1301SM UES1302SM UES1303SM High Efficiency, 8A FEATURES DESCRIPTION • Small Convenient Surface Mount Package The UES1301SM series are power rectifiers in reliable hermetic surface mount packages designed to meet the most demanding switching applications when reducing


    OCR Scan     		PDF UES1301SM UES1302SM UES1303SM UES1301SM 30nSec) UES1301SM.

    Untitled

    Abstract: No abstract text available
    Text: UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 RECTIFIERS High Efficiency, 3.5A FEATU RES DESCRIPTION • • • • An axial leaded power rectifier useful in m any sw itching applications. Particu larly suited where very fast recovery and low forward voltage are


    OCR Scan     		PDF UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 UES1301 UES1302 YV28-50

    BKC Semiconductors

    Abstract: No abstract text available
    Text: 6 Amp Voidless Fast Applications Switching Rectifiers UES1301 thru UES1303 Hard Glass Tungsten For use in hostile environments such as military and aerospace. A fast high power rectifier for industrial use with military reliability. These parts are at home equally in satellite or heavy industrial power supplies.


    OCR Scan     		PDF UES1301 UES1303 Abs02 UES1302 BKC Semiconductors