UN211M
Abstract: XP0111M
Text: Composite Transistors XP0111M Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN211M x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02
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XP0111M
UN211M
UN211M
XP0111M
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UN211M
Abstract: UNR211M XN0111M XN111M
Text: Composite Transistors XN0111M XN111M PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR211M(UN211M) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN0111M
XN111M)
UNR211M
UN211M)
UN211M
XN0111M
XN111M
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UN211M
Abstract: XP0111M
Text: Composite Transistors XP0111M Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN211M x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02
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XP0111M
UN211M
UN211M
XP0111M
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UN211M
Abstract: XN111M
Text: Composite Transistors XN111M PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN211M x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element 0.16 -0.06
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XN111M
UN211M
UN211M
XN111M
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unr211
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)
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2002/95/EC)
UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
unr211
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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UNR211M
Abstract: UN211M XN0111M XN111M
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111M (XN111M) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 5 2.8+0.2 –0.3 • Two elements incorporated into one package
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2002/95/EC)
XN0111M
XN111M)
UNR211M
UN211M
XN0111M
XN111M
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111M Silicon PNP epitaxial planar type Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP0111M
UNR211M
UN211M)
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UNR2110
Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud
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2002/95/EC)
UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
UNR2119
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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UNR2119
Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
Text: Transistors with built-in Resistor UNR211x Series UN211x Series Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2119
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111M (XN111M) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu
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XN0111M
XN111M)
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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UN211M
Abstract: UNR211M XN0111M XN111M
Text: Composite Transistors XN0111M XN111M PNP epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XN0111M
XN111M)
UNR211M
UN211M)
UN211M
XN0111M
XN111M
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UN2111
Abstract: ic 2115 ic 2114 UNR211N UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
Text: Transistors with built-in Resistor UNR21XX Series UN21XX Series Silicon PNP epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Costs can be reduced through downsizing of the equipment and
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UNR21XX
UN21XX
UN2111
ic 2115
ic 2114
UNR211N
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
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ic 2113
Abstract: UN2110 UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118
Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05
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E/211F/211H/211L/211M/211N/211T/211V/211Z
UN2111
UN2112
UN2113
UN2114
UN2115
UN2116
UN2117
UN2118
ic 2113
UN2110
UN2111
UN2112
UN2113
UN2114
UN2115
UN2116
UN2117
UN2118
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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UNR2110
Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and
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2002/95/EC)
UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
UNR2119
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0411M (XP411M) Silicon PNP epitaxial planar type 0.2±0.05 6 Unit: mm (0.425) For switching/digital circuits 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP0411M
XP411M)
UNR211M
UN211M)
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2-11d
Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou
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2002/95/EC)
UNR211x
UN211x
2-11d
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
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SC59A
Abstract: SC-59A RT1N441C RT1P441M RT1N434S RT1P441C RT1P441S UN111E UN111H UN112X
Text: - 336 - Ta=25t , *Ef][iTc=25‘ C) m z tt ICvDC) « (V) RT1P434S RT1P441C =m =M RT1P441M HS RTÌP441S H S UN111D UN211H ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ st ♦ST ♦ST ♦ST ♦ST ♦ST UN 2 i1L ft; UN211M UN111E U N I I IF
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RT1P134S
RT1P441C
T1P441M
RT1P441S
N111D
UN111E
SC-59A
UN212Y
47K/10K
UN211D
SC59A
RT1N441C
RT1P441M
RT1N434S
UN111E
UN111H
UN112X
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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OCR Scan
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1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
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UN7000
Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )
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UN1000
600mW
UN2000
200mW)
N2111
UN2112
UN2113
UN2114
UN2115
UN2116
UN7000
UN8000
UN9110
UNR921CJ
UN1219
un4115
un1211
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