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    UPA835TF Search Results

    UPA835TF Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPA835TF NEC Twin transistors equipped with different model chips(6P small MM) Original PDF
    uPA835TF NEC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PA Original PDF
    UPA835TF-T1 NEC NPN silicon epitaxial twin transistor. Original PDF
    UPA835TF-T1 NEC Twin transistors equipped with different model chips(6P small MM) Original PDF
    uPA835TF-T1 NEC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PA Original PDF

    UPA835TF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL UPA835TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 6e-16 MJC 0.34 0.55 BF 109 120 XCJC 0.3 NF 1 0.98 CJS 0.75 VAF 15 10 VJS 0.75 IKF 0.19 0.08 MJS ISE 7.9e-13 32e-16 FC 0.5 0.5 12e-12 NE 2.19 1.93 TF 2.5e-12


    Original     		UPA835TF 7e-16 9e-13 4e-12 18e-12 6e-16 32e-16 96e-4 8e-12 1e-12 PDF

    7483 IC

    Abstract: NE685 NE68530 NE856 NE85630 S21E UPA832TF UPA832TF-T1 UPA835TF IC 566 vco
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA


    Original     		UPA832TF NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 24-Hour 7483 IC NE685 NE68530 NE856 NE85630 S21E UPA832TF-T1 IC 566 vco PDF

    transistors ON 4673

    Abstract: NE685 NE68530 NE856 NE85630 S21E UPA832TF UPA835TF UPA835TF-T1 pin IC 7479
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 (Top View) 2.1 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA


    Original     		UPA835TF NE685, NE856) UPA835TF UPA835TF-T1 NE68530 NE85630 UPA832TF 24-Hour transistors ON 4673 NE685 NE68530 NE856 NE85630 S21E UPA835TF-T1 pin IC 7479 PDF

    SM 3119 N

    Abstract: 6681 - 250
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA835TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA 2.1 ± 0.1 Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA


    OCR Scan     		UPA835TF NE685, NE856) UPA835TF PA835TF-T1 24-Hour SM 3119 N 6681 - 250 PDF

    ta 8653 n

    Abstract: ha 1452 Amplifiers" ha 1452 Amplifiers IC 8208 HA 12045 ic MAX 8997
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA835TF OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA — Q2.NF = 1.2 dB TYP at f = 1 GHz, Vce = 3 V, Ic = 7 mA


    OCR Scan     		UPA835TF NE685, NE856) UPA835TF NE68530 NE85630 UPA835TF-T1 UPA832TF ta 8653 n ha 1452 Amplifiers" ha 1452 Amplifiers IC 8208 HA 12045 ic MAX 8997 PDF

    ka 2843

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA835TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: P a ckage O u tlin e TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA 2.1 ± 0 .1 Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA


    OCR Scan     		UPA835TF NE685, NE856) NE68530 NE85630 UPA835TF-T1 24-Hour ka 2843 PDF

    k 2611 transistor 3pin

    Abstract: tp 4058 kf 203 e 011 transistor PA835
    Text: PRELIMINARY DATA SHEET UPA835TF NPN SILICON EPITAXIAL TWIN TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: P ackage O u tlin e TS06 (T o p View) Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA Q 2:N F = 1.2 dB T Y P at f = 1 G Hz, V c e = 3 V, Ic = 7 mA


    OCR Scan     		UPA835TF NE685, NE856) NE68530 NE85630 UPA835TF-T1 24-Hour k 2611 transistor 3pin tp 4058 kf 203 e 011 transistor PA835 PDF

    transistor d 13009

    Abstract: 9622 transistor t 3866 power transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA832TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.2 dB TYP at f = 1 GHz, V ce = 3 V, Ic = 7 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA


    OCR Scan     		UPA832TF NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 24-Hour transistor d 13009 9622 transistor t 3866 power transistor PDF

    transistor d 13009

    Abstract: IC 566 vco transistor j 13009 IC 8085 pin
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA 2.1 ±0.1 j'•*— 1.25 ± 0.1 -*■


    OCR Scan     		UPA832TF 1S21EI2 NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 transistor d 13009 IC 566 vco transistor j 13009 IC 8085 pin PDF

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan     		UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685 PDF

    sem 5025

    Abstract: ic 4440 for audio amplification pe 5571 NEC 9736
    Text: PRELIMINARY DATA SHEET S ilico n T ransistor uPA835TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ¿iPA835TF has two different built-in transistors (Q1


    OCR Scan     		uPA835TF iPA835TF 2SC4959, 2SC4226) sem 5025 ic 4440 for audio amplification pe 5571 NEC 9736 PDF

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan     		UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363 PDF