Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT4800 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
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Original
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UT4800
UT4800
UT4800L-S08-R
UT4800G-S08-R
UT4800L-S08-T
UT4800G-S08-T
QW-R105-001
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT4800 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
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Original
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UT4800
UT4800
UT4800G-S08-R
QW-R105-001
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PDF
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ut4800-s08-r
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT4800 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
|
Original
|
UT4800
UT4800
UT4800L
UT4800-S08-R
UT4800L-S08-R
UT4800-S08-T
UT4800L-S08-T
QW-R502-174
ut4800-s08-r
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UT4800 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UT4800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in
|
Original
|
UT4800
UT4800
UT4800L-S08-R
UT4800G-S08-R
UT4800L-S08-T
UT4800G-S08-T
QW-R105-001
|
PDF
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