Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51 V17800B.HY51 V16800B 2Mx8, Fast Page mode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 2 ,0 9 7 ,1 5 2 x 8 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is
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HY51V17800B
V16800B
A0-A11)
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MSM51V17800
Abstract: J00j
Text: O K I Semiconductor MSM5 1 V17800_ 2,097,152-Word x 8-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The V17800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the V17800 is OKI's CMOS silicon gate process technology.
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MSM51V17800_
152-Word
MSM51V17800
cycles/32ms
51V17800
GD174Ã
MSM51V17800
J00j
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V17800 A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The V17800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V17800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The V17800A is
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MSM51V17800A
152-Word
MSM51V17800A
28-pin
cycles/32
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MSM51V17800DSL
Abstract: No abstract text available
Text: E2G0127-17-61 Semiconductor O KI M V17800D/DSL 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51 V17800D/DSL is a 2,097,152-word x 8-bit dynamicRAM fabricated in Oki's silicon-gate CMOS technology. The V17800D/DSL achieves high integration, high-speed operation,
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E2G0127-17-61
MSM51V17800D/DSL
152-Word
MSM51VI7800D
MSM51V17800D/DSL
28-pin
MSM51V17800DSL
MSM51V17800DSL
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MSM51V17800
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V17800 _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The V17800 is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V17800 achieves high integration, high-speed operation, and low-power
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MSM51V17800
152-Word
MSM51V17800
28-pin
cycles/32
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msm51v17800a
Abstract: MSM51V17800
Text: \ O K I Semiconductor MSM51 V17800 A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T he M SM V17800A is a 2,097,152-word x 8-bit d yn am ic R A M fab ricated in O K I's C M O S silico n gate technolog y. The M SM V17800A ach ieves h ig h in teg ratio n , high-speed o p eratio n, an d low p o w er consum ption d ue to q u ad ru p le p o lysilico n double m etal C M O S. T he M SM V17800A is
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MSM51V17800A
152-Word
MSM51V17800A
28-pin
cycles/32
MSM51V17800
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81v1
Abstract: No abstract text available
Text: PRELIMINARY - - August 1996 Edition 3.0 FUJITSU PRODUCT PROFILE SHEET MB 81 V1 7800A-60/70/60L/70L CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dy na m ic RAM The Fujitsu M V17800A is a fully decoded CM OS Dynamic RAM DRAM that contains
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800A-60/70/60L/70L
B81V17800A
024-bits
DS05-10169-2E
81v1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 V 1 7 8 0 0 A J ,T P ,R T - 6 ,-7 ,-8 ,-6 S ,- 7 S ,- 8 S FAST PAGE MODE 16777216-BIT 2097152-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 2097152-word by 8-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal
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16777216-BIT
2097152-WORD
2K/32ms>
M5M4V17800AJ
2097152-WQRD
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TC5118160
Abstract: c51v tc5118180
Text: X6 Capacity Type No. Max. Access Time ns Min. Cyde Power Organization Time(ns) Supply (V) Max. Powat Dis»ip»tk>n(rciW) Active *T C 5 1 16800ANJ/ANT-60 60 15 30 110 523 *T C 5 1 16800ANJ/ANT-70 70 20 35 130 440 *TC5117800ANJ/ANT-60 60 15 30 110 743 2097152
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16800ANJ/ANT-60
16800ANJ/ANT-70
TC5117800ANJ/ANT-60
17800ANJ/ANT-70
TC51V16800AN
J/ANT-70
V17800ANJ/ANT-70
TC5116900AJ/AFT-60
16900AJ/AFT-70
17900AJ/AFT-60
TC5118160
c51v
tc5118180
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA S H E E T D S 0 5 - 1 0 1 6 9 - 2 E MEMORY CMOS 2 M x 8 BIT FAST PAGE MODE DYNAMI C RAM V17800A - 6 0 /-7 0 CMOS 2,097,152 x 8BIT Fast Page Mode Dy nam ic RAM • ABSOLUTE MAXIMUM R A T I N G S see N O T E T h e F u jit s u M B 8 1 V 1 7 8 0 0 A is a fu lly d e c o d e d C M O S D y n a m i c R A M ( D R A M ) t h a t c o n t a i n s 1 6 , 7 7 7 ,2 1 6 m e m o r y c e ll s a c c e s s i b l e in 8 - bit i n c r e m e n t s .
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MB81V17800A
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Untitled
Abstract: No abstract text available
Text: MEMORY WÊStÈllÊÊÊÎlÊ^^^^^^^^^^M M — 1— M CMOS 2,097,152 x 8 BITS Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V17800A is a fully decoded CMOS Dynamic RAM ^DRAM^ihat contains 16,777,216 memory cells accessible in 8-bit increments. The V17800A features a^asfrpage^m ode of operation whereby high
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MB81V17800A
024-bits
F9704
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2U97
Abstract: M5M4V17800 5105 GE M5M4V17800CJ
Text: MITSUBISHI LSIs V17800CJ,TP-5,-6,-7, -5S,-6S,-7S FAST PAGE MODE 16777216-BIT 2097152-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 2097152-word by 8-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high speed, low power
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M5M4V17800CJ
16777216-BIT
2097152-WORD
2097152-WQRD
16777216-BtT
2U97
M5M4V17800
5105 GE
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARYApril 1996 Edition 2.2 _ PRODUCT PROFILE SHEET - C P - FUJITSU V17800A-60/-70 CMOS 2M X 8BIT FAST PAGE MODE DYNAMIC RAM CMOS 2,097,152 x 8BIT Fast Page Mode Dynamic RAM The Fujitsu V17800A is a fully decoded CMOS Dynamic RAM DRAM that contains
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MB81V17800A-60/-70
MB81V17800A
024-bits
37MT7Sb
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Untitled
Abstract: No abstract text available
Text: v ^ s v ^ 's " - ” M 5 M 4 V 1 7 8 0 0 A J ,T P ,R T - 6 ,- 7 ,- 8 ,- 6 S r S 's ,- 7 3 ,- 8 8 FAST PAGE MODE 16777216-BIT 2097152-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) (3.3V) Vcc E DQi U FEATURES RAS Type name CAS acseta
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16777216-BIT
2097152-WORD
2K/32m
7800AJ
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M5M4V17800
Abstract: No abstract text available
Text: MITSUBISHI LSIs « ,» m n A * y f M 5 M 4 V 1 7 8 0 0 C J , T • "" P - 5 S - 5 , - 6 , - 7 , , - 6 S , - 7 S FAST PAGE MODE 16777216-BIT 2097152-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 2097152-w o rd by 8-bit dynamic RAMs, fabricated with the high performance C M OS process, and is ideal
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16777216-BIT
2097152-WORD
2097152-w
M5M4V17800CJ
2097152-WQRD
M5M4V17800
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Untitled
Abstract: No abstract text available
Text: DRAM 5 i DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, Ta=0°C to +706C Organization (Wxb) Part Number Access Time max. (ns) Cycle Time min. (ns) Power Consumption max. (mW) Packages Standby Operating V17800A-60 60[15¡'1 110[40]*3 432 M B81V 17800A-70
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MB81V17800A-60
7800A-70
B81V17800A-60L
MB81V17800A-70L
V17800B-50
MB81V17800B-60
MB81V17800B-50I
MB81V17800B-60L
MB81V17805A-60
MB81V17805A-70
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pj 25
Abstract: No abstract text available
Text: MEMORY 2 M x 8 BIT FAST PAGE MODE DYNAMIC V17800B-50/-60/-50L/-60L CMOS 2,097,152 x 8 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu V17800B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The V17800B features a “fast page” mode of operation whereby high
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MB81V17800B-50/-60/-50L/-60L
MB81V17800B
F9712
pj 25
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 2 M x 8 BITS FAST PAGE MODE DYNAMIC RAM V17800A-60/60L/-70/70L CMOS 2,097,152 x 8 BITS Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V17800A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The V17800A features a ’’fast page” mode of operation whereby high
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MB81V17800A-60/60L/-70/70L
MB81V17800A
024-bits
C28058S-2C
28-LEAD
FPT-28P-M14)
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m5m4v17800dj
Abstract: M5M4V17800
Text: R e v -1 0 MITSUBISHI LSIs V17800DJJP -5r 6r 7r 5Sr 6Sr 7S FAST PAGE MODE 16777216-BIT ( 2097152-WORD BY 8-BIT ) DYNAMIC RAM DESCRIPTION This is a fam ily of 2097152-word by 8-bit dynam ic RAMs, fabricated with the high perform ance CM OS process,and is
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M5M4V17800DJJP
16777216-BIT
2097152-WORD
m5m4v17800dj
M5M4V17800
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