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    X2816BM Search Results

    X2816BM Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    X2816BM Xicor 16K Military 2048 x 8-Bit EEPROM Scan PDF
    X2816BM-25 Xicor 16K Military 2048 x 8-Bit EEPROM Scan PDF

    X2816BM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TMS27256

    Abstract: M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32
    Text: Device List by Manufacturer . 2716 2716BDC 2732 2732A 2764 Am27C64 Am2864AE Am2864BE 27128 Am27C128 27256 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 Am27H010 Am27LV010 Am27LV010B Am27C020 Am27LV020 Am27LV020B Am27C040 Am27C080 AT28C04 AT28C16 AT28C17 AT28HC16 AT28HC16L AT27HC64


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    PDF 2716BDC Am27C64 Am2864AE Am2864BE Am27C128 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 TMS27256 M27512FI TC571000D-15 et2732 TC571001D-15 4827128 27c1001a Toshiba TC571000D-20 28C256 27c32

    x2816

    Abstract: X2816B
    Text: XICOR 9941743 X IC O R INCT5 De I ^ 4 1 7 4 3 DGD14TD 95D 014 90 IN C G |~ D T-M-/3-27 PRELIMINARY INFORMATION 16K Military 2048 x 8 Bit X2816BM Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times


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    PDF DGD14TD T-M-/3-27 X2816BM 16-Byte X2816BM x2816 X2816B

    X2816B

    Abstract: No abstract text available
    Text: X ra PRELIMINARY in f o r m a t io n 16K Military X2816BM 2048 x 8B Electrically Erasable PROM features DESCRIPTION • 250 ns Access Tim« • High Performance Advanced NMOS Technology « Fast Write Cycle Times - 16-Byte Page Write Operation —Byte or Page Write Cycle: 5 ma Typical


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    PDF X2816BM X2616 X2816B X2616B 16-byte

    X2816BMB

    Abstract: X2816BM X2816B
    Text: Xiar. D ATA S H EET S U P PLEM EN T 16K Mil-Std-883C X2816BMB 2 04 8 x8 Bit Electrically Erasable PROM With the exception of V q e . all device A.C. and D.C. pa­ rameters are the same as those for normal operation. A.C. AND D.C. REQUIREMENTS FOR CHIP ERASE


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    PDF X2816BMB MilStd-883C Mil-Std-883C X2816BM X2816B

    X2816B

    Abstract: X2816BM X2816BMB WE VQE 11 E X2816BM-25
    Text: JÜHK PR ELIM IN A R Y IN FO R M A TIO N 16K Military X2816BM 2 0 4 8 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical


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    PDF X2816BM 16-Byte X2816B Mil-Std-883C X2816BMB WE VQE 11 E X2816BM-25

    Untitled

    Abstract: No abstract text available
    Text: Usar PRELIMINARY INFORMATION 16K Military X2816BM 2048 x 8 Bit Electrically Erasable PROM FEATURES • 250 ns Access Time • High Performance Advanced NMOS Technology • Fast Write Cycle Times — 16-Byte Page Write Operation — Byte or Page Write Cycle: 5 ms Typical


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    PDF X2816BM 16-Byte X2816B ilStd-883C

    0G015

    Abstract: X2816BMB
    Text: XICOR INC TS 99 41 74 3 X I C O R 1^1^41743 0G015D0 □ 95D INC T - ¥4 -/3 -27 DATA SHEET SUPPLEMENT Mil-Std-883C 16K 01500 D W i 2048 x 8 Bit X2816BMB Electrically Erasable PROM With the exception of Voe . a11device A.C. and D.C. pa­ rameters are the same as those for normal operation.


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    PDF 0G015D0 Mil-Std-883C X2816BMB X2816BMB MilStd-883C 0G015