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    XP01507 Search Results

    XP01507 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    XP01507 Panasonic Silicon NPN Epitaxial Planar Type Composite Transistor Original PDF
    XP01507 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    XP01507 Panasonic Composite Transistors Original PDF

    XP01507 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC2631

    Abstract: XP01507 XP1507
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planar type Unit: mm (0.425) For high breakdown voltage and low-noise amplification 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors)


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    XP01507 XP1507) 2SC2631 XP01507 XP1507 PDF

    2SD0814

    Abstract: 2SD814 XP01507 XP1507
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planer transistor ● 5 4 Features 0.2±0.1 Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 5° ● 0.20±0.05


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    XP01507 XP1507) 2SD0814 2SD814) 2SD814 XP01507 XP1507 PDF

    2SC2631

    Abstract: XP01507 XP1507
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planar type Unit: mm (0.425) For high breakdown voltage and low-noise amplification 0.20±0.05 4 M Di ain sc te on na tin nc ue e/ d 5 0.12+0.05 –0.02 1 5˚ ue pl d in an c se ed lud pl vi an m m es


    Original
    XP01507 XP1507) 2SC2631 XP01507 XP1507 PDF

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planar type Unit: mm (0.425) For high breakdown voltage and low-noise amplification 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors)


    Original
    XP01507 XP1507) PDF

    2SD0814

    Abstract: 2SD814 XP01507 XP1507
    Text: Composite Transistors XP01507 XP1507 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 High breakdown voltage and for low noise amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD0814(2SD814) x 2 elements 0 to 0.1 ● 0.7±0.1


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    XP01507 XP1507) 2SD0814 2SD814) 2SD814 XP01507 XP1507 PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF