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    A 12-15 GHZ HIGH GAIN AMPLIFIER Search Results

    A 12-15 GHZ HIGH GAIN AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    A 12-15 GHZ HIGH GAIN AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLM18HD182SN1D

    Abstract: RC0402FR-07300RL YAGEO RC0402FR NXP MARKING 11* 3PIN marking code 6w LQG15HS3N9S02D
    Text: SO T8 9 BGA3012 1 GHz 12 dB gain wideband amplifier MMIC Rev. 2 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency


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    PDF BGA3012 BGA3012 BLM18HD182SN1D RC0402FR-07300RL YAGEO RC0402FR NXP MARKING 11* 3PIN marking code 6w LQG15HS3N9S02D

    CFA0301-A

    Abstract: CF003-01 CFB0301-B CFB0301
    Text: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon


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    PDF CF003-01 15-Jul-08 CF003-01 CF003-01-000X CFA0301-A CFB0301-B CFB0301

    Untitled

    Abstract: No abstract text available
    Text: 43 dB Gain, 1 Watt, 12 GHz to 18 GHz, Broadband High Gain Amplifier, 39 dBm IP3, 6 dB NF, SMA TECHNICAL DATA SHEET PE15A3507 PE15A3507 is a 1W wideband coaxial power amplifier operating in the 12 to 18 GHz frequency range. The amplifier offers 30 dBm min of P1db and high 43 dB typical small signal gain with the gain flatness of ±1.5dB max and an outstanding output


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    PDF PE15A3507 PE15A3507 -high-gain-amplifier-6-db-sma-pe15a3507-p

    Untitled

    Abstract: No abstract text available
    Text: 41 dB Gain, 1 Watt, 8 GHz to 12 GHz, Medium Power High Gain Amplifier, 3.5 dB NF, SMA TECHNICAL DATA SHEET PE15A4008 PE15A4008 is a 1 W X-band high gain coaxial power amplifier in the 8 to 12 GHz frequency range. The amplifier offers 30 dBm of P1db min and 41 dB (min) small signal gain with the excellent gain flatness of ±1.0 dB. This performance is achieved


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    PDF PE15A4008 PE15A4008 power-high-gain-amplifier-sma-pe15a4008-p

    Untitled

    Abstract: No abstract text available
    Text: HMC625LP5 / 625LP5E v08.0210 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC625LP5 625LP5E 25mm2

    Untitled

    Abstract: No abstract text available
    Text: HMC926LP5E v00.0810 0.5 dB LSB 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 700 - 2700 MHz Typical Applications Features The HMC926LP5E is ideal for: Gain Control Range in 0.5 dB Steps : @ 900 MHz, +6.5 to +38 dB @ 1900 MHz, +1 to +32.5 dB @ 2600 MHz, -4 to +27.5 dB


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    PDF HMC926LP5E HMC926LP5E

    Untitled

    Abstract: No abstract text available
    Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC625LP5 625LP5E 25mm2

    LNA at 15 GHZ with Ultra high sensitivity

    Abstract: MSOP-10 bluetooth transceiver hmc-28 2.4 ghz transmitter radio controlled with seven HBT MMIC Amplifier sot-86 HMC308 HMC310MS8G HMC315 HMC318MS8G
    Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION AUTUMN INSIDE. *12 NEW 2000 AMPLIFIERS Hittite HBT Amplifier Product Line Announced! RELEASED!. HBT MMICs Combine High Performance Design Expertise With InGaP GaAs Technology. Hittite has introduced five new InGaP HBT amplifiers


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    PDF HMC313 LNA at 15 GHZ with Ultra high sensitivity MSOP-10 bluetooth transceiver hmc-28 2.4 ghz transmitter radio controlled with seven HBT MMIC Amplifier sot-86 HMC308 HMC310MS8G HMC315 HMC318MS8G

    HMC926LP5E

    Abstract: H926
    Text: HMC926LP5E v00.0810 0.5 dB LSB 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 700 - 2700 MHz Typical Applications Features The HMC926LP5E is ideal for: Gain Control Range in 0.5 dB Steps : • Cellular Infrastructure • WiBro, WiMAX and LTE/4G • Microwave Radio & VSAT


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    PDF HMC926LP5E HMC926LP5E H926

    H625

    Abstract: HMC625LP5 HMC625LP5E
    Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC625LP5 625LP5E 25mm2 H625 HMC625LP5E

    Untitled

    Abstract: No abstract text available
    Text: HMC743LP6C / 743LP6CE v05.1011 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Designer’s Kit Available Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure


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    PDF HMC743LP6C 743LP6CE HMC743LP6

    HMC743LP6C

    Abstract: No abstract text available
    Text: HMC743LP6C / 743LP6CE v05.1011 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Designer’s Kit Available Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure


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    PDF HMC743LP6C 743LP6CE

    HMC743

    Abstract: ACG12 h743 HMC743LP6
    Text: HMC743LP6C / 743LP6CE v03.0810 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC743LP6C 743LP6CE 36mm2 HMC743 ACG12 h743 HMC743LP6

    Untitled

    Abstract: No abstract text available
    Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC625LP5 625LP5E 25mm2

    Untitled

    Abstract: No abstract text available
    Text: HMC743LP6C / 743LP6CE v02.0709 0.5 dB LSB GaAs MMIC 12-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC743LP6C 743LP6CE 12-BIT 36mm2

    Untitled

    Abstract: No abstract text available
    Text: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC627LP5 627LP5E 25mm2

    Untitled

    Abstract: No abstract text available
    Text: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC627LP5 627LP5E 25mm2

    HMC627LP5E

    Abstract: HMC627LP5
    Text: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC627LP5 627LP5E 25mm2 HMC627LP5E

    Untitled

    Abstract: No abstract text available
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Preliminary Specifications SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz


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    PDF SST13LP05 SST13LP052 S71318-00-000

    SST13LP05

    Abstract: SST13LP05-MLCF SST13LP05-MLCF-K
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Preliminary Specifications SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz


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    PDF SST13LP05 SST13LP052 80Taipei S71318-00-000 SST13LP05 SST13LP05-MLCF SST13LP05-MLCF-K

    Untitled

    Abstract: No abstract text available
    Text: SBBA-180-43-01-SMA DATA SHEET 12 GHz to 18 GHz, 43 dB Gain Broadband High Gain Amplifier with 1 Watt and SMA SBBA-180-43-01-SMA is a 1W wideband coaxial power amplifier operating in the 12 to 18 GHz frequency range. The amplifier offers 30 dBm min of P1db


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    PDF SBBA-180-43-01-SMA SBBA-180-43-01-SMA -high-gain-amplifier-sbba-180-43-01-sma-p

    tt 18934

    Abstract: 30i sot23 5140 SN 74500
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z


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    PDF IS21El2 IS21EI2 NE686 NE68618-T1 NE68619-T1 NE68630-T1 NE68633-T1 tt 18934 30i sot23 5140 SN 74500

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos - 3 V, IDS = 10 m A LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 21 7.5 dB typical at 12 GHz 18 ffl 15 < a La s 0.3 |im, Wo = 280 jun LOW COST PLASTIC PACKAGING


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    PDF NE76038 NE76038 reliab121 NE76038-T1

    LTA 703 S

    Abstract: EM 408 gps beta e 555
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:


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    PDF NE721S01 NE721S01 24-Hour LTA 703 S EM 408 gps beta e 555