BLM18HD182SN1D
Abstract: RC0402FR-07300RL YAGEO RC0402FR NXP MARKING 11* 3PIN marking code 6w LQG15HS3N9S02D
Text: SO T8 9 BGA3012 1 GHz 12 dB gain wideband amplifier MMIC Rev. 2 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency
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BGA3012
BGA3012
BLM18HD182SN1D
RC0402FR-07300RL
YAGEO RC0402FR
NXP MARKING 11* 3PIN
marking code 6w
LQG15HS3N9S02D
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CFA0301-A
Abstract: CF003-01 CFB0301-B CFB0301
Text: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon
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CF003-01
15-Jul-08
CF003-01
CF003-01-000X
CFA0301-A
CFB0301-B
CFB0301
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Untitled
Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v08.0210 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: HMC926LP5E v00.0810 0.5 dB LSB 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 700 - 2700 MHz Typical Applications Features The HMC926LP5E is ideal for: Gain Control Range in 0.5 dB Steps : @ 900 MHz, +6.5 to +38 dB @ 1900 MHz, +1 to +32.5 dB @ 2600 MHz, -4 to +27.5 dB
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HMC926LP5E
HMC926LP5E
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Untitled
Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: HMC743LP6C / 743LP6CE v05.1011 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Designer’s Kit Available Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure
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HMC743LP6C
743LP6CE
HMC743LP6
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HMC743LP6C
Abstract: No abstract text available
Text: HMC743LP6C / 743LP6CE v05.1011 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Designer’s Kit Available Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure
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HMC743LP6C
743LP6CE
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Untitled
Abstract: No abstract text available
Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC625LP5
625LP5E
25mm2
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H743
Abstract: No abstract text available
Text: HMC743LP6C / 743LP6CE v04.0311 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC743LP6C
743LP6CE
H743
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Untitled
Abstract: No abstract text available
Text: HMC743LP6C / 743LP6CE v02.0709 0.5 dB LSB GaAs MMIC 12-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC743LP6C
743LP6CE
12-BIT
36mm2
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Untitled
Abstract: No abstract text available
Text: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC627LP5
627LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection
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HMC627LP5
627LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Preliminary Specifications SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz
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SST13LP05
SST13LP052
S71318-00-000
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SST13LP05
Abstract: SST13LP05-MLCF SST13LP05-MLCF-K
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Preliminary Specifications SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz
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SST13LP05
SST13LP052
80Taipei
S71318-00-000
SST13LP05
SST13LP05-MLCF
SST13LP05-MLCF-K
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variable frequency circuit diagram
Abstract: No abstract text available
Text: HMC681LP5 / 681LP5E v02.0510 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER w/ SERIAL CONTROL, DC - 1 GHz Typical Applications Features The HMC681LP5 E is ideal for: +13.5 dB to +45 dB Gain Control in 0.5 dB Steps • IF & RF Applications High Output IP3: +36 dBm
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HMC681LP5
681LP5E
25mm2
variable frequency circuit diagram
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Untitled
Abstract: No abstract text available
Text: MECX10W-3 X-Band GaAs pHEMT High Power Amplifier Main Features VG VD 0.25µm GaAs pHEMT Technology 8.5 – 11.1 GHz full performances Frequency Range Saturated Output Power ≥ 11W PAE = 35% - 44% VG VD Small Signal Gain > 27 dB Bias: Vd = 8V, Id = 2.5A, Vg = -0.45V Typ.
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MECX10W-3
MECX10W-3
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Untitled
Abstract: No abstract text available
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet The SST13LP05 is a fully matched, dual-band power amplifier module PAM based on the highly-reliable InGaP/GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable power detectors, and low-current analog on/
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SST13LP05
SST13LP05
11a/b/g
GHz10/
DS75032A
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Untitled
Abstract: No abstract text available
Text: HMC681LP5 / 681LP5E v02.0510 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER w/ SERIAL CONTROL, DC - 1 GHz Typical Applications Features The HMC681LP5 E is ideal for: +13.5 dB to +45 dB Gain Control in 0.5 dB Steps • IF & RF Applications High Output IP3: +36 dBm
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HMC681LP5
681LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: HMC681LP5 / 681LP5E v03.1010 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER w/ SERIAL CONTROL, DC - 1 GHz Typical Applications Features the HmC681lp5 e is ideal for: +13.5 db to +45 db gain Control in 0.5 db steps • if & rf applications High Output ip3: +36 dbm
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HMC681LP5
681LP5E
25mm2
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Untitled
Abstract: No abstract text available
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz
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SST13LP05
SST13LP052
16F-6,
S71318-02-000
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MICROWAVE TRANSISTOR
Abstract: No abstract text available
Text: HMC455LP3 v00.1102 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB
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HMC455LP3
HMC455LP3
MICROWAVE TRANSISTOR
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SST13LP05
Abstract: SST13LP05-MLCF SST13LP05-MLCF-K
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz
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SST13LP05
SST13LP052
16F-6,
S71318-02-000
SST13LP05
SST13LP05-MLCF
SST13LP05-MLCF-K
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Untitled
Abstract: No abstract text available
Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos - 3 V, IDS = 10 m A LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 21 7.5 dB typical at 12 GHz 18 ffl 15 < a La s 0.3 |im, Wo = 280 jun LOW COST PLASTIC PACKAGING
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NE76038
NE76038
reliab121
NE76038-T1
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LTA 703 S
Abstract: EM 408 gps beta e 555
Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:
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NE721S01
NE721S01
24-Hour
LTA 703 S
EM 408 gps
beta e 555
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