Untitled
Abstract: No abstract text available
Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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TGF2819-FL
TGF2819-FL
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HK1608
Abstract: NJG1105F DCS1800 GRM36 HK1005
Text: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and
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NJG1105F
NJG1105F
DCS1800,
1860MHz
1960MHz
2140MHz
1860/1960/2140MHz
HK1608
DCS1800
GRM36
HK1005
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FS
T1G4020036-FS
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FL
T1G4020036-FL
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MC13821
Abstract: QFN-12
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: MC13821 Rev. 1.5, 09/2009 MC13821 Package Information Plastic Package Case 1345 QFN–12 MC13821 Low Noise Amplifier with Bypass Switch 1 Introduction The MC13821 is a high gain LNA with extremely low
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MC13821
MC13821
QFN-12
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LLV1005FB10NJ
Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
Text: RMPA5251-251 Raytheon RF Components 4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics1 The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with
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RMPA5251-251
RMPA5251-251
LLV1005FB10NJ
RAYTHEON
GRM21BR60J106K
LLV1005FB15NJ
RMPA5251
grm39
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MP4T243
Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages
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MP4T243
MP4T24300
MP4T24335
Bipolar Transistor
ma4t24335
Transistor 35 MICRO-X
MP4T24335
S21E
S22E
Silicon Bipolar Transistor MICRO-X
low noise transistors microwave
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SUF-4000
Abstract: 15 GHz high power amplifier
Text: Preliminary SUF-4000 Product Description Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from
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SUF-4000
SUF-4000
EDS-105418
15 GHz high power amplifier
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spf-5122
Abstract: SPF-5122Z spf 51z SPF 188 SPF5122z SPF512 MSL-1 MCH185A101JK spf5122 EVB1
Text: Preliminary Information SPF-5122Z 100-4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 100-4000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.
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SPF-5122Z
SPF-5122Z
SPF-5122Z-EVB1
EDS-105470
spf-5122
spf 51z
SPF 188
SPF5122z
SPF512
MSL-1
MCH185A101JK
spf5122
EVB1
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Amplifier Research rf power amplifier schematic
Abstract: design of multi section directional coupler Spiral Inductor technology 10 ghz driver amplifier mmic distributed amplifier c-band 50 Watt power amplifier c-Band mmic core chip pin diode limiter 3 ghz 1 watt directional coupler chip 8 GHz
Text: TECHNICAL FEATURE HIGH PERFORMANCE WIDEBAND MSAG GAIN BLOCK/DRIVER AMPLIFIER MMICS USING MLP TECHNOLOGY The multi-level plating MLP process has been used to develop a family of wideband, low noise, generic gain block and driver amplifier MMICs operating
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HP MMIC
Abstract: MSA-0670
Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0670 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 19.5␣ dB Typical at 0.5 GHz • Low Noise Figure:
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MSA-0670
MSA-0670
HP MMIC
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AWL9555
Abstract: 802.11a whdi AWL9555RS35P8 802.11a Amplifier
Text: AWL9555 802.11a/n WLAN Power Amplifier Data Sheet - Rev 2.1 FEATURES • -33 dB Dynamic EVM @ POUT = +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 220 mA Supply Current @ +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 29 dB of Linear Power Gain
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AWL9555
11a/n
11a/n
AWL9555
802.11a
whdi
AWL9555RS35P8
802.11a Amplifier
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ofdm transceiver 900mhz
Abstract: 433 mhz rf power amplifier module efficiency 04023J2R2BBS
Text: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure
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TQP8M9013
24-pin
TQP8M9013
ofdm transceiver 900mhz
433 mhz rf power amplifier module efficiency
04023J2R2BBS
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AP561-PCB2500
Abstract: AP561 AP561-F JESD22-A114
Text: AP561 2.3-2.9 GHz WiMAX 8W Power Amplifier Product Features Product Description • 2.3 – 2.9 GHz • +39 dBm P1dB • 13.8 dB Gain • 1.4% EVM @ 30 dBm Pout Functional Diagram The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage
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AP561
AP561
JESD22-A114
JESD22-C101
J-STD-020
1-800-WJ1-4401
AP561-PCB2500
AP561-F
JESD22-A114
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HP MMIC
Abstract: MSA-0170
Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0170 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.3 GHz • High Gain: 18.5 dB Typical at 0.5 GHz • Unconditionally Stable k>1 • Hermetic Gold-ceramic Microstrip Package
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MSA-0170
MSA-0170
HP MMIC
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OFDM transceiver 800mhz
Abstract: No abstract text available
Text: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure
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TQP8M9013
24-pin
TQP8M9013
OFDM transceiver 800mhz
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MSA-0170
Abstract: No abstract text available
Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0170 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.3 GHz • High Gain: 18.5 dB Typical at 0.5 GHz • Unconditionally Stable k>1 • Hermetic Gold-ceramic Microstrip Package
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MSA-0170
MSA-0170
5965-9692E
5966-4955E
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ina 333 amplifier
Abstract: INA-02170
Text: Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02170 Features • Cascadable 50 Ω Gain Block • Low Noise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz • 3 dB Bandwidth:
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INA-02170
INA-02170
5965-9674E
5966-4957E
ina 333 amplifier
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Untitled
Abstract: No abstract text available
Text: Advance Product Information January 12, 2005 4 Watt 802.11a Packaged Amplifier TGA2921-EPU-SG Key Features • • • • • • • 4.9 - 6 GHz Application Frequency Range 11 dB Nominal Gain @ 8V 800mA 36 dBm Nominal P1dB @ 8V 800mA IMD3 -50dBc @ 24dBm SCL, Typical
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TGA2921-EPU-SG
800mA
-50dBc
24dBm
TGA2921-SG
TGA2921
TGA2921-EPU-SG
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FR4 Prepreg
Abstract: FR4 Prepreg for RF 06 layer PCB S2254 S2528
Text: DATA SHEET SKY67002-396LF: 1.6-2.1 GHz High Linearity, Active Bias Low-Noise Amplifier Applications • GSM, CDMA, WCDMA, TD-SCDMA cellular infrastructure • Ultra low-noise systems • Balanced, single-ended low-noise amplifier designs RF_IN Features VBIAS
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SKY67002-396LF:
J-STD-020)
201442B
FR4 Prepreg
FR4 Prepreg for RF 06 layer PCB
S2254
S2528
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2.45 GHz single chip transmitter
Abstract: JEP95 SST12LP14C SST12LP14C-QVCE SST12LP14C-QVCE-K S71353
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:
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SST12LP14C
SST-GP1214A2
11b/g
S71353-00-000
2.45 GHz single chip transmitter
JEP95
SST12LP14C
SST12LP14C-QVCE
SST12LP14C-QVCE-K
S71353
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HP MMIC
Abstract: MODELS 248, 249 MSA-0104 msa 0104
Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0104 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 0.8 GHz • High Gain: 17.0 dB Typical at 0.5 GHz • Unconditionally Stable k>1 • Low Cost Plastic Package Description
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MSA-0104
MSA-0104
HP MMIC
MODELS 248, 249
msa 0104
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AP1046
Abstract: No abstract text available
Text: AP1046 RFIC Technology Corporation www.rfintc.com 2.4~2.5 GHz High Power Amplifier Rev. 002 AP1046 is a linear, three-stages power amplifier MMIC with super high output power in 2.4GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers 22dBm
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AP1046
AP1046
22dBm
54Mbps
IEEE802
26dBm
155mA
64QAM
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MSA-1110
Abstract: No abstract text available
Text: d a ta sh e et HA» *892 Q avantek MSA-1110 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek 100 mil Package Features • • • • • • High Dynamic Range Cascadable 50 Q or 75 Q Gain Block
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MSA-1110
MSA-1110
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