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    A 12-15 GHZ HIGH GAIN AMPLIFIER Search Results

    A 12-15 GHZ HIGH GAIN AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    A 12-15 GHZ HIGH GAIN AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet The SST13LP05 is a fully matched, dual-band power amplifier module PAM based on the highly-reliable InGaP/GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable power detectors, and low-current analog on/


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    PDF SST13LP05 SST13LP05 11a/b/g GHz10/ DS75032A

    HMC455LP3

    Abstract: No abstract text available
    Text: HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB


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    PDF HMC455LP3 HMC455LP3

    Untitled

    Abstract: No abstract text available
    Text: HMC490LP5 / 490LP5E v04.0213 LOW NOISE AMPLIFIER - SMT GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Typical Applications Features The HMC490LP5 E is ideal for: Noise Figure: 2.5 dB • Point-to-Point Radios P1dB Output Power: +25 dBm • Point-to-Multi-Point Radios


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    PDF HMC490LP5 490LP5E

    HMC490LP5

    Abstract: No abstract text available
    Text: HMC490LP5 v00.0404 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC490LP5 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2.5 dB • Point-to-Point Radios


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    PDF HMC490LP5 HMC490LP5

    tx 2G

    Abstract: TX-2G SP3T, SURFACE MOUNT AWL9565 power amplifier 5 ghz
    Text: AWL9565 802.11a/n Power Amplifier & Switch with 802.11 b/g/n RX/TX/ Bluetooth Switch Data Sheet - Rev 2.0 FEATURES • • • • • • • • • • • • • 3% Dynamic EVM @ Pout = +18 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps 30 dB of Linear Power Gain


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    PDF 11a/n AWL9565 tx 2G TX-2G SP3T, SURFACE MOUNT AWL9565 power amplifier 5 ghz

    Untitled

    Abstract: No abstract text available
    Text: ASL563 High Gain, Low Noise Amplifier Description Features  33 dB Gain at 900 MHz  1.0 dB NF at 900 MHz  Two-stage LNA  Two power supplies in Type 2 ASL563 is a two-stage LNA for GPS, GLONASS, Galileo, Compass, DMB, and satellite receiver low noise blocks. It has a low noise, high gain, and high


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    PDF ASL563 ASL563 OT363 OT363 100GHz 800GHz)

    Rogers 4350

    Abstract: HMC454ST89
    Text: HMC454ST89 v02.0404 MICROWAVE CORPORATION InGaP HBT ½ WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC454ST89 is ideal for applications requiring a high dynamic range amplifier: Output IP3: +40 to +42 dBm • GSM, GPRS & EDGE


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    PDF HMC454ST89 HMC454ST89 Rogers 4350

    AMMP-6222-BLKG

    Abstract: A004R AMMP6222 AMMP-6222 AMMP-6222-TR1G AMMP-6222-TR2G RO4350 mmic 18b
    Text: AMMP-6222 7 to 21 GHz GaAs High Linearity LNA in SMT Package Data Sheet Description Features Avago Technologies’ AMMP-6222 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier in a surface mount package. The wide band and unconditionally stable performance makes this MMIC


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    PDF AMMP-6222 AMMP-6222 120mA RO4350, AV01-0441EN AV02-0493EN AMMP-6222-BLKG A004R AMMP6222 AMMP-6222-TR1G AMMP-6222-TR2G RO4350 mmic 18b

    Untitled

    Abstract: No abstract text available
    Text: HMC490 v03.0213 LOW NOISE AMPLIFIER - CHIP GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz Typical Applications Features The HMC490 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios Gain: 27 dB


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    PDF HMC490 HMC490

    HMC455LP3

    Abstract: HMC461LP3 hmc - 020
    Text: HMC461LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain


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    PDF HMC461LP3 HMC461LP3 HMC455LP3 HMC455LP3 hmc - 020

    HMC-C026

    Abstract: amplifier 10 GHz sma
    Text: HMC-C026 v00.1005 WIDEBAND HIGH GAIN POWER AMPLIFIER MODULE, 2 - 20 GHz AMPLIFIERS - CONNECTORIZED MODULES 9 Features Gain: 30 dB @ 8 GHz P1dB Output Power: +26 dBm @ 8 GHz Noise Figure: 2.5 dB @ 8 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing


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    PDF HMC-C026 HMC-C026 amplifier 10 GHz sma

    HMC490

    Abstract: HMC-490
    Text: HMC490 v01.1003 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC490 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios


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    PDF HMC490 HMC490 HMC-490

    AH128-89PCB900

    Abstract: ah128g aclr ip3
    Text: AH128 ¼W High Linearity InGaP HBT Amplifier Product Features • 60 – 3500 MHz • +25 dBm P1dB • +40 dBm Output IP3 • 16.9 dB Gain @ 2140 MHz • 115 mA current draw • +5V Single Supply • MTTF > 100 Years • Lead-free/Green/RoHS-compliant SOT-89 Package


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    PDF AH128 AH128 OT-89 AH128-89PCB900 ah128g aclr ip3

    MRD 532

    Abstract: video transmitter 2.4 GHz JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K 5805
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Features: • High Gain: – Typically 27-28 dB gain across 2.4-2.5 GHz – Typically 30-34 dB gain across 4.9-5.8 GHz


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    PDF SST13LP02 SST13LP022 S71304-01-000 MRD 532 video transmitter 2.4 GHz JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K 5805

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF TGF2819-FS TGF2819-FS

    DCS-1800MHz

    Abstract: No abstract text available
    Text: RF2417 Preliminary TRI-BAND LOW NOISE AMPLIFIER Typical Applications • Tri-Band EGSM/DCS/PCS Handsets • Dual-Band EGSM/DCS Handsets Product Description The RF2417 is a highly-integrated, low-power and lowcost tri-band LNA for EGSM-based multi-band handset


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    PDF RF2417 RF2417 16-pin -35dBm, 940MHz 1845MHz 1960MHz DCS-1800MHz

    12-Contact

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15B Data Sheet The SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency


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    PDF SST12LP15B SST12LP15B 16-contact 12-contact DS75029A

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF TGF2819-FL TGF2819-FL

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF T1G4020036-FS T1G4020036-FS

    HK1608

    Abstract: NJG1105F DCS1800 GRM36 HK1005
    Text: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and


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    PDF NJG1105F NJG1105F DCS1800, 1860MHz 1960MHz 2140MHz 1860/1960/2140MHz HK1608 DCS1800 GRM36 HK1005

    Untitled

    Abstract: No abstract text available
    Text: AST54S High Gain, Low Noise Amplifier Features Description 19.0 dB Gain at 900 MHz 0.4 dB NF at 900 MHz 30 dBm OIP3 at 900 MHz 18 dBm P1dB at 900 MHz One-stage LNA AST54S is a one-stage LNA which has a low noise, high gain, and high linearity over a wide range of


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    PDF AST54S AST54S OT343 OT343 23x13

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF T1G4020036-FL T1G4020036-FL

    AN-081

    Abstract: BGA619
    Text: Application Note No. 081 Discrete Semiconductors The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features • Easy-to-use LNA MMIC in 70 GHz ft SiGe technology • Tiny „Green“ P-TSLP-7-1 package no Lead or Halogen


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    PDF BGA619 AN081 AN-081

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF T1G4020036-FS T1G4020036-FS