Untitled
Abstract: No abstract text available
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet The SST13LP05 is a fully matched, dual-band power amplifier module PAM based on the highly-reliable InGaP/GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable power detectors, and low-current analog on/
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SST13LP05
SST13LP05
11a/b/g
GHz10/
DS75032A
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HMC455LP3
Abstract: No abstract text available
Text: HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB
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HMC455LP3
HMC455LP3
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Untitled
Abstract: No abstract text available
Text: HMC490LP5 / 490LP5E v04.0213 LOW NOISE AMPLIFIER - SMT GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz Typical Applications Features The HMC490LP5 E is ideal for: Noise Figure: 2.5 dB • Point-to-Point Radios P1dB Output Power: +25 dBm • Point-to-Multi-Point Radios
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HMC490LP5
490LP5E
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HMC490LP5
Abstract: No abstract text available
Text: HMC490LP5 v00.0404 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC490LP5 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2.5 dB • Point-to-Point Radios
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HMC490LP5
HMC490LP5
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tx 2G
Abstract: TX-2G SP3T, SURFACE MOUNT AWL9565 power amplifier 5 ghz
Text: AWL9565 802.11a/n Power Amplifier & Switch with 802.11 b/g/n RX/TX/ Bluetooth Switch Data Sheet - Rev 2.0 FEATURES • • • • • • • • • • • • • 3% Dynamic EVM @ Pout = +18 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps 30 dB of Linear Power Gain
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11a/n
AWL9565
tx 2G
TX-2G
SP3T, SURFACE MOUNT
AWL9565
power amplifier 5 ghz
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Untitled
Abstract: No abstract text available
Text: ASL563 High Gain, Low Noise Amplifier Description Features 33 dB Gain at 900 MHz 1.0 dB NF at 900 MHz Two-stage LNA Two power supplies in Type 2 ASL563 is a two-stage LNA for GPS, GLONASS, Galileo, Compass, DMB, and satellite receiver low noise blocks. It has a low noise, high gain, and high
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ASL563
ASL563
OT363
OT363
100GHz
800GHz)
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Rogers 4350
Abstract: HMC454ST89
Text: HMC454ST89 v02.0404 MICROWAVE CORPORATION InGaP HBT ½ WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC454ST89 is ideal for applications requiring a high dynamic range amplifier: Output IP3: +40 to +42 dBm • GSM, GPRS & EDGE
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HMC454ST89
HMC454ST89
Rogers 4350
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AMMP-6222-BLKG
Abstract: A004R AMMP6222 AMMP-6222 AMMP-6222-TR1G AMMP-6222-TR2G RO4350 mmic 18b
Text: AMMP-6222 7 to 21 GHz GaAs High Linearity LNA in SMT Package Data Sheet Description Features Avago Technologies’ AMMP-6222 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier in a surface mount package. The wide band and unconditionally stable performance makes this MMIC
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AMMP-6222
AMMP-6222
120mA
RO4350,
AV01-0441EN
AV02-0493EN
AMMP-6222-BLKG
A004R
AMMP6222
AMMP-6222-TR1G
AMMP-6222-TR2G
RO4350
mmic 18b
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Untitled
Abstract: No abstract text available
Text: HMC490 v03.0213 LOW NOISE AMPLIFIER - CHIP GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz Typical Applications Features The HMC490 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios Gain: 27 dB
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HMC490
HMC490
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HMC455LP3
Abstract: HMC461LP3 hmc - 020
Text: HMC461LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain
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HMC461LP3
HMC461LP3
HMC455LP3
HMC455LP3
hmc - 020
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HMC-C026
Abstract: amplifier 10 GHz sma
Text: HMC-C026 v00.1005 WIDEBAND HIGH GAIN POWER AMPLIFIER MODULE, 2 - 20 GHz AMPLIFIERS - CONNECTORIZED MODULES 9 Features Gain: 30 dB @ 8 GHz P1dB Output Power: +26 dBm @ 8 GHz Noise Figure: 2.5 dB @ 8 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing
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HMC-C026
HMC-C026
amplifier 10 GHz sma
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HMC490
Abstract: HMC-490
Text: HMC490 v01.1003 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC490 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios
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HMC490
HMC490
HMC-490
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AH128-89PCB900
Abstract: ah128g aclr ip3
Text: AH128 ¼W High Linearity InGaP HBT Amplifier Product Features • 60 – 3500 MHz • +25 dBm P1dB • +40 dBm Output IP3 • 16.9 dB Gain @ 2140 MHz • 115 mA current draw • +5V Single Supply • MTTF > 100 Years • Lead-free/Green/RoHS-compliant SOT-89 Package
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AH128
AH128
OT-89
AH128-89PCB900
ah128g
aclr ip3
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MRD 532
Abstract: video transmitter 2.4 GHz JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K 5805
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Features: • High Gain: – Typically 27-28 dB gain across 2.4-2.5 GHz – Typically 30-34 dB gain across 4.9-5.8 GHz
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SST13LP02
SST13LP022
S71304-01-000
MRD 532
video transmitter 2.4 GHz
JEP95
SST13LP02
SST13LP02-QDF
SST13LP02-QDF-K
5805
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Untitled
Abstract: No abstract text available
Text: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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TGF2819-FS
TGF2819-FS
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DCS-1800MHz
Abstract: No abstract text available
Text: RF2417 Preliminary TRI-BAND LOW NOISE AMPLIFIER Typical Applications • Tri-Band EGSM/DCS/PCS Handsets • Dual-Band EGSM/DCS Handsets Product Description The RF2417 is a highly-integrated, low-power and lowcost tri-band LNA for EGSM-based multi-band handset
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RF2417
RF2417
16-pin
-35dBm,
940MHz
1845MHz
1960MHz
DCS-1800MHz
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12-Contact
Abstract: No abstract text available
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15B Data Sheet The SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency
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SST12LP15B
SST12LP15B
16-contact
12-contact
DS75029A
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Untitled
Abstract: No abstract text available
Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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TGF2819-FL
TGF2819-FL
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FS
T1G4020036-FS
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HK1608
Abstract: NJG1105F DCS1800 GRM36 HK1005
Text: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and
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NJG1105F
NJG1105F
DCS1800,
1860MHz
1960MHz
2140MHz
1860/1960/2140MHz
HK1608
DCS1800
GRM36
HK1005
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Untitled
Abstract: No abstract text available
Text: AST54S High Gain, Low Noise Amplifier Features Description 19.0 dB Gain at 900 MHz 0.4 dB NF at 900 MHz 30 dBm OIP3 at 900 MHz 18 dBm P1dB at 900 MHz One-stage LNA AST54S is a one-stage LNA which has a low noise, high gain, and high linearity over a wide range of
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AST54S
AST54S
OT343
OT343
23x13
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FL
T1G4020036-FL
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AN-081
Abstract: BGA619
Text: Application Note No. 081 Discrete Semiconductors The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features • Easy-to-use LNA MMIC in 70 GHz ft SiGe technology • Tiny „Green“ P-TSLP-7-1 package no Lead or Halogen
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BGA619
AN081
AN-081
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FS
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