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    A 12-15 GHZ HIGH GAIN AMPLIFIER Search Results

    A 12-15 GHZ HIGH GAIN AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    A 12-15 GHZ HIGH GAIN AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet The SST13LP05 is a fully matched, dual-band power amplifier module PAM based on the highly-reliable InGaP/GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable power detectors, and low-current analog on/


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    PDF SST13LP05 SST13LP05 11a/b/g GHz10/ DS75032A

    HMC455LP3

    Abstract: No abstract text available
    Text: HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB


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    PDF HMC455LP3 HMC455LP3

    HMC490LP5

    Abstract: No abstract text available
    Text: HMC490LP5 v00.0404 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC490LP5 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2.5 dB • Point-to-Point Radios


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    PDF HMC490LP5 HMC490LP5

    Untitled

    Abstract: No abstract text available
    Text: ASL563 High Gain, Low Noise Amplifier Description Features  33 dB Gain at 900 MHz  1.0 dB NF at 900 MHz  Two-stage LNA  Two power supplies in Type 2 ASL563 is a two-stage LNA for GPS, GLONASS, Galileo, Compass, DMB, and satellite receiver low noise blocks. It has a low noise, high gain, and high


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    PDF ASL563 ASL563 OT363 OT363 100GHz 800GHz)

    AMMP-6222-BLKG

    Abstract: A004R AMMP6222 AMMP-6222 AMMP-6222-TR1G AMMP-6222-TR2G RO4350 mmic 18b
    Text: AMMP-6222 7 to 21 GHz GaAs High Linearity LNA in SMT Package Data Sheet Description Features Avago Technologies’ AMMP-6222 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier in a surface mount package. The wide band and unconditionally stable performance makes this MMIC


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    PDF AMMP-6222 AMMP-6222 120mA RO4350, AV01-0441EN AV02-0493EN AMMP-6222-BLKG A004R AMMP6222 AMMP-6222-TR1G AMMP-6222-TR2G RO4350 mmic 18b

    Untitled

    Abstract: No abstract text available
    Text: HMC490 v03.0213 LOW NOISE AMPLIFIER - CHIP GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz Typical Applications Features The HMC490 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios Gain: 27 dB


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    PDF HMC490 HMC490

    HMC455LP3

    Abstract: HMC461LP3 hmc - 020
    Text: HMC461LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain


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    PDF HMC461LP3 HMC461LP3 HMC455LP3 HMC455LP3 hmc - 020

    HMC-C026

    Abstract: amplifier 10 GHz sma
    Text: HMC-C026 v00.1005 WIDEBAND HIGH GAIN POWER AMPLIFIER MODULE, 2 - 20 GHz AMPLIFIERS - CONNECTORIZED MODULES 9 Features Gain: 30 dB @ 8 GHz P1dB Output Power: +26 dBm @ 8 GHz Noise Figure: 2.5 dB @ 8 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing


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    PDF HMC-C026 HMC-C026 amplifier 10 GHz sma

    HMC490

    Abstract: HMC-490
    Text: HMC490 v01.1003 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC490 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios


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    PDF HMC490 HMC490 HMC-490

    MRD 532

    Abstract: video transmitter 2.4 GHz JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K 5805
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Features: • High Gain: – Typically 27-28 dB gain across 2.4-2.5 GHz – Typically 30-34 dB gain across 4.9-5.8 GHz


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    PDF SST13LP02 SST13LP022 S71304-01-000 MRD 532 video transmitter 2.4 GHz JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K 5805

    MRD 532

    Abstract: 24-wqfn-4x4-QD-1 JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K SST13LP022
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier SST13LP02 Preliminary Specifications SST13LP022.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Features: • High Gain: – Typically 27-28 dB gain across 2.4-2.5 GHz – Typically 30-34 dB gain across 4.9-5.8 GHz


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    PDF SST13LP02 SST13LP022 S71304-01-000 MRD 532 24-wqfn-4x4-QD-1 JEP95 SST13LP02 SST13LP02-QDF SST13LP02-QDF-K

    DCS-1800MHz

    Abstract: No abstract text available
    Text: RF2417 Preliminary TRI-BAND LOW NOISE AMPLIFIER Typical Applications • Tri-Band EGSM/DCS/PCS Handsets • Dual-Band EGSM/DCS Handsets Product Description The RF2417 is a highly-integrated, low-power and lowcost tri-band LNA for EGSM-based multi-band handset


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    PDF RF2417 RF2417 16-pin -35dBm, 940MHz 1845MHz 1960MHz DCS-1800MHz

    12-Contact

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15B Data Sheet The SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency


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    PDF SST12LP15B SST12LP15B 16-contact 12-contact DS75029A

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF TGF2819-FL TGF2819-FL

    Untitled

    Abstract: No abstract text available
    Text: AST54S High Gain, Low Noise Amplifier Features Description 19.0 dB Gain at 900 MHz 0.4 dB NF at 900 MHz 30 dBm OIP3 at 900 MHz 18 dBm P1dB at 900 MHz One-stage LNA AST54S is a one-stage LNA which has a low noise, high gain, and high linearity over a wide range of


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    PDF AST54S AST54S OT343 OT343 23x13

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF T1G4020036-FL T1G4020036-FL

    AN-081

    Abstract: BGA619
    Text: Application Note No. 081 Discrete Semiconductors The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features • Easy-to-use LNA MMIC in 70 GHz ft SiGe technology • Tiny „Green“ P-TSLP-7-1 package no Lead or Halogen


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    PDF BGA619 AN081 AN-081

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF T1G4020036-FS T1G4020036-FS

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF T1G4020036-FL T1G4020036-FL

    MC13821

    Abstract: QFN-12
    Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: MC13821 Rev. 1.5, 09/2009 MC13821 Package Information Plastic Package Case 1345 QFN–12 MC13821 Low Noise Amplifier with Bypass Switch 1 Introduction The MC13821 is a high gain LNA with extremely low


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    PDF MC13821 MC13821 QFN-12

    HMC485MS8G

    Abstract: No abstract text available
    Text: HMC485MS8G v00.0503 MICROWAVE CORPORATION HIGH IP3 GaAs MMIC MIXER with INTEGRATED LO AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features High Dynamic Range Infrastructure: +34 dBm Input IP3 • GSM, GPRS & EDGE Conversion Loss: 9 dB • CDMA & W-CDMA Low LO Drive: -2 to +4 dBm


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    PDF HMC485MS8G HMC485MS8G

    SPF-5122Z

    Abstract: SPF5122 spf 51z
    Text: Preliminary Information SPF-5122Z 100-4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 100-4000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.


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    PDF SPF-5122Z SPF-5122Z SPF-5122Z-EVB1 EDS-105470 SPF5122 spf 51z

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: MC13821 Rev. 1.5, 09/2009 MC13821 Package Information Plastic Package Case 1345 QFN–12 MC13821 Low Noise Amplifier with Bypass Switch 1 Introduction The MC13821 is a high gain LNA with extremely low


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    PDF MC13821 MC13821 QFN-12

    EVM7

    Abstract: No abstract text available
    Text: RMPA5251 4.90–5.85 GHz InGaP HBT Linear Power Amplifier General Description Features The RMPA5251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and


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    PDF RMPA5251 RMPA5251 26dBm EVM7