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    A 12-15 GHZ HIGH GAIN AMPLIFIER Search Results

    A 12-15 GHZ HIGH GAIN AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    A 12-15 GHZ HIGH GAIN AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet The SST13LP05 is a fully matched, dual-band power amplifier module PAM based on the highly-reliable InGaP/GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable power detectors, and low-current analog on/


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    PDF SST13LP05 SST13LP05 11a/b/g GHz10/ DS75032A

    HMC490LP5

    Abstract: No abstract text available
    Text: HMC490LP5 v00.0404 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC490LP5 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2.5 dB • Point-to-Point Radios


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    PDF HMC490LP5 HMC490LP5

    Untitled

    Abstract: No abstract text available
    Text: HMC490 v03.0213 LOW NOISE AMPLIFIER - CHIP GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz Typical Applications Features The HMC490 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios Gain: 27 dB


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    PDF HMC490 HMC490

    HMC455LP3

    Abstract: HMC461LP3 hmc - 020
    Text: HMC461LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain


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    PDF HMC461LP3 HMC461LP3 HMC455LP3 HMC455LP3 hmc - 020

    HMC-C026

    Abstract: amplifier 10 GHz sma
    Text: HMC-C026 v00.1005 WIDEBAND HIGH GAIN POWER AMPLIFIER MODULE, 2 - 20 GHz AMPLIFIERS - CONNECTORIZED MODULES 9 Features Gain: 30 dB @ 8 GHz P1dB Output Power: +26 dBm @ 8 GHz Noise Figure: 2.5 dB @ 8 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing


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    PDF HMC-C026 HMC-C026 amplifier 10 GHz sma

    HMC490

    Abstract: HMC-490
    Text: HMC490 v01.1003 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC490 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios


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    PDF HMC490 HMC490 HMC-490

    DCS-1800MHz

    Abstract: No abstract text available
    Text: RF2417 Preliminary TRI-BAND LOW NOISE AMPLIFIER Typical Applications • Tri-Band EGSM/DCS/PCS Handsets • Dual-Band EGSM/DCS Handsets Product Description The RF2417 is a highly-integrated, low-power and lowcost tri-band LNA for EGSM-based multi-band handset


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    PDF RF2417 RF2417 16-pin -35dBm, 940MHz 1845MHz 1960MHz DCS-1800MHz

    12-Contact

    Abstract: No abstract text available
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15B Data Sheet The SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency


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    PDF SST12LP15B SST12LP15B 16-contact 12-contact DS75029A

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF TGF2819-FL TGF2819-FL

    HK1608

    Abstract: NJG1105F DCS1800 GRM36 HK1005
    Text: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and


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    PDF NJG1105F NJG1105F DCS1800, 1860MHz 1960MHz 2140MHz 1860/1960/2140MHz HK1608 DCS1800 GRM36 HK1005

    Untitled

    Abstract: No abstract text available
    Text: AST54S High Gain, Low Noise Amplifier Features Description 19.0 dB Gain at 900 MHz 0.4 dB NF at 900 MHz 30 dBm OIP3 at 900 MHz 18 dBm P1dB at 900 MHz One-stage LNA AST54S is a one-stage LNA which has a low noise, high gain, and high linearity over a wide range of


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    PDF AST54S AST54S OT343 OT343 23x13

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF T1G4020036-FS T1G4020036-FS

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF T1G4020036-FL T1G4020036-FL

    MC13821

    Abstract: QFN-12
    Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: MC13821 Rev. 1.5, 09/2009 MC13821 Package Information Plastic Package Case 1345 QFN–12 MC13821 Low Noise Amplifier with Bypass Switch 1 Introduction The MC13821 is a high gain LNA with extremely low


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    PDF MC13821 MC13821 QFN-12

    EVM7

    Abstract: No abstract text available
    Text: RMPA5251 4.90–5.85 GHz InGaP HBT Linear Power Amplifier General Description Features The RMPA5251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and


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    PDF RMPA5251 RMPA5251 26dBm EVM7

    LLV1005FB10NJ

    Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
    Text: RMPA5251-251 Raytheon RF Components 4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics1 The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with


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    PDF RMPA5251-251 RMPA5251-251 LLV1005FB10NJ RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 grm39

    MP4T243

    Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages


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    PDF MP4T243 MP4T24300 MP4T24335 Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave

    SUF-4000

    Abstract: 15 GHz high power amplifier
    Text: Preliminary SUF-4000 Product Description Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from


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    PDF SUF-4000 SUF-4000 EDS-105418 15 GHz high power amplifier

    spf-5122

    Abstract: SPF-5122Z spf 51z SPF 188 SPF5122z SPF512 MSL-1 MCH185A101JK spf5122 EVB1
    Text: Preliminary Information SPF-5122Z 100-4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 100-4000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.


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    PDF SPF-5122Z SPF-5122Z SPF-5122Z-EVB1 EDS-105470 spf-5122 spf 51z SPF 188 SPF5122z SPF512 MSL-1 MCH185A101JK spf5122 EVB1

    HMC453QS16G

    Abstract: No abstract text available
    Text: HMC453QS16G v00.0504 MICROWAVE CORPORATION AMPLIFIERS - SMT 8 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Features Typical Applications The HMC453QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +50 dBm • GSM, GPRS & EDGE


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    PDF HMC453QS16G HMC453QS16G CDMA2000 QSOP16G

    Amplifier Research rf power amplifier schematic

    Abstract: design of multi section directional coupler Spiral Inductor technology 10 ghz driver amplifier mmic distributed amplifier c-band 50 Watt power amplifier c-Band mmic core chip pin diode limiter 3 ghz 1 watt directional coupler chip 8 GHz
    Text: TECHNICAL FEATURE HIGH PERFORMANCE WIDEBAND MSAG GAIN BLOCK/DRIVER AMPLIFIER MMICS USING MLP TECHNOLOGY The multi-level plating MLP process has been used to develop a family of wideband, low noise, generic gain block and driver amplifier MMICs operating


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    CGB8001-SC

    Abstract: No abstract text available
    Text: DC-2.8 GHz InGaP HBT Matched Gain Block Amplifier July 2008 - Rev 16-Jul-08 CGB8001-SC Features Functional Block Diagram SOT-89 18 dBm Linear Power @ 2140 MHz 15.5 dB Gain @ 2140 MHz 12 dB Gain @ 2700 MHz 27 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature


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    PDF 16-Jul-08 CGB8001-SC OT-89

    HP MMIC

    Abstract: MSA-0670
    Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0670 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 19.5␣ dB Typical at 0.5 GHz • Low Noise Figure:


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    PDF MSA-0670 MSA-0670 HP MMIC

    AWL9555

    Abstract: 802.11a whdi AWL9555RS35P8 802.11a Amplifier
    Text: AWL9555 802.11a/n WLAN Power Amplifier Data Sheet - Rev 2.1 FEATURES • -33 dB Dynamic EVM @ POUT = +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 220 mA Supply Current @ +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 29 dB of Linear Power Gain


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    PDF AWL9555 11a/n 11a/n AWL9555 802.11a whdi AWL9555RS35P8 802.11a Amplifier