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    A 12-15 GHZ HIGH GAIN AMPLIFIER Search Results

    A 12-15 GHZ HIGH GAIN AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    A 12-15 GHZ HIGH GAIN AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF TGF2819-FL TGF2819-FL

    HK1608

    Abstract: NJG1105F DCS1800 GRM36 HK1005
    Text: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and


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    PDF NJG1105F NJG1105F DCS1800, 1860MHz 1960MHz 2140MHz 1860/1960/2140MHz HK1608 DCS1800 GRM36 HK1005

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF T1G4020036-FS T1G4020036-FS

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


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    PDF T1G4020036-FL T1G4020036-FL

    MC13821

    Abstract: QFN-12
    Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: MC13821 Rev. 1.5, 09/2009 MC13821 Package Information Plastic Package Case 1345 QFN–12 MC13821 Low Noise Amplifier with Bypass Switch 1 Introduction The MC13821 is a high gain LNA with extremely low


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    PDF MC13821 MC13821 QFN-12

    LLV1005FB10NJ

    Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
    Text: RMPA5251-251 Raytheon RF Components 4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics1 The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with


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    PDF RMPA5251-251 RMPA5251-251 LLV1005FB10NJ RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 grm39

    MP4T243

    Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages


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    PDF MP4T243 MP4T24300 MP4T24335 Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave

    SUF-4000

    Abstract: 15 GHz high power amplifier
    Text: Preliminary SUF-4000 Product Description Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from


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    PDF SUF-4000 SUF-4000 EDS-105418 15 GHz high power amplifier

    spf-5122

    Abstract: SPF-5122Z spf 51z SPF 188 SPF5122z SPF512 MSL-1 MCH185A101JK spf5122 EVB1
    Text: Preliminary Information SPF-5122Z 100-4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 100-4000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.


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    PDF SPF-5122Z SPF-5122Z SPF-5122Z-EVB1 EDS-105470 spf-5122 spf 51z SPF 188 SPF5122z SPF512 MSL-1 MCH185A101JK spf5122 EVB1

    Amplifier Research rf power amplifier schematic

    Abstract: design of multi section directional coupler Spiral Inductor technology 10 ghz driver amplifier mmic distributed amplifier c-band 50 Watt power amplifier c-Band mmic core chip pin diode limiter 3 ghz 1 watt directional coupler chip 8 GHz
    Text: TECHNICAL FEATURE HIGH PERFORMANCE WIDEBAND MSAG GAIN BLOCK/DRIVER AMPLIFIER MMICS USING MLP TECHNOLOGY The multi-level plating MLP process has been used to develop a family of wideband, low noise, generic gain block and driver amplifier MMICs operating


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    HP MMIC

    Abstract: MSA-0670
    Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0670 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 19.5␣ dB Typical at 0.5 GHz • Low Noise Figure:


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    PDF MSA-0670 MSA-0670 HP MMIC

    AWL9555

    Abstract: 802.11a whdi AWL9555RS35P8 802.11a Amplifier
    Text: AWL9555 802.11a/n WLAN Power Amplifier Data Sheet - Rev 2.1 FEATURES • -33 dB Dynamic EVM @ POUT = +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 220 mA Supply Current @ +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 29 dB of Linear Power Gain


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    PDF AWL9555 11a/n 11a/n AWL9555 802.11a whdi AWL9555RS35P8 802.11a Amplifier

    ofdm transceiver 900mhz

    Abstract: 433 mhz rf power amplifier module efficiency 04023J2R2BBS
    Text: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure


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    PDF TQP8M9013 24-pin TQP8M9013 ofdm transceiver 900mhz 433 mhz rf power amplifier module efficiency 04023J2R2BBS

    AP561-PCB2500

    Abstract: AP561 AP561-F JESD22-A114
    Text: AP561 2.3-2.9 GHz WiMAX 8W Power Amplifier Product Features Product Description • 2.3 – 2.9 GHz • +39 dBm P1dB • 13.8 dB Gain • 1.4% EVM @ 30 dBm Pout Functional Diagram The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage


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    PDF AP561 AP561 JESD22-A114 JESD22-C101 J-STD-020 1-800-WJ1-4401 AP561-PCB2500 AP561-F JESD22-A114

    HP MMIC

    Abstract: MSA-0170
    Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0170 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.3 GHz • High Gain: 18.5 dB Typical at 0.5 GHz • Unconditionally Stable k>1 • Hermetic Gold-ceramic Microstrip Package


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    PDF MSA-0170 MSA-0170 HP MMIC

    OFDM transceiver 800mhz

    Abstract: No abstract text available
    Text: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure


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    PDF TQP8M9013 24-pin TQP8M9013 OFDM transceiver 800mhz

    MSA-0170

    Abstract: No abstract text available
    Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0170 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.3 GHz • High Gain: 18.5 dB Typical at 0.5 GHz • Unconditionally Stable k>1 • Hermetic Gold-ceramic Microstrip Package


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    PDF MSA-0170 MSA-0170 5965-9692E 5966-4955E

    ina 333 amplifier

    Abstract: INA-02170
    Text: Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02170 Features • Cascadable 50 Ω Gain Block • Low Noise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz • 3 dB Bandwidth:


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    PDF INA-02170 INA-02170 5965-9674E 5966-4957E ina 333 amplifier

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information January 12, 2005 4 Watt 802.11a Packaged Amplifier TGA2921-EPU-SG Key Features • • • • • • • 4.9 - 6 GHz Application Frequency Range 11 dB Nominal Gain @ 8V 800mA 36 dBm Nominal P1dB @ 8V 800mA IMD3 -50dBc @ 24dBm SCL, Typical


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    PDF TGA2921-EPU-SG 800mA -50dBc 24dBm TGA2921-SG TGA2921 TGA2921-EPU-SG

    FR4 Prepreg

    Abstract: FR4 Prepreg for RF 06 layer PCB S2254 S2528
    Text: DATA SHEET SKY67002-396LF: 1.6-2.1 GHz High Linearity, Active Bias Low-Noise Amplifier Applications • GSM, CDMA, WCDMA, TD-SCDMA cellular infrastructure • Ultra low-noise systems • Balanced, single-ended low-noise amplifier designs RF_IN Features VBIAS


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    PDF SKY67002-396LF: J-STD-020) 201442B FR4 Prepreg FR4 Prepreg for RF 06 layer PCB S2254 S2528

    2.45 GHz single chip transmitter

    Abstract: JEP95 SST12LP14C SST12LP14C-QVCE SST12LP14C-QVCE-K S71353
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:


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    PDF SST12LP14C SST-GP1214A2 11b/g S71353-00-000 2.45 GHz single chip transmitter JEP95 SST12LP14C SST12LP14C-QVCE SST12LP14C-QVCE-K S71353

    HP MMIC

    Abstract: MODELS 248, 249 MSA-0104 msa 0104
    Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0104 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 0.8 GHz • High Gain: 17.0 dB Typical at 0.5 GHz • Unconditionally Stable k>1 • Low Cost Plastic Package Description


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    PDF MSA-0104 MSA-0104 HP MMIC MODELS 248, 249 msa 0104

    AP1046

    Abstract: No abstract text available
    Text: AP1046 RFIC Technology Corporation www.rfintc.com 2.4~2.5 GHz High Power Amplifier Rev. 002 AP1046 is a linear, three-stages power amplifier MMIC with super high output power in 2.4GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers 22dBm


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    PDF AP1046 AP1046 22dBm 54Mbps IEEE802 26dBm 155mA 64QAM

    MSA-1110

    Abstract: No abstract text available
    Text: d a ta sh e et HA» *892 Q avantek MSA-1110 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek 100 mil Package Features • • • • • • High Dynamic Range Cascadable 50 Q or 75 Q Gain Block


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    PDF MSA-1110 MSA-1110