Untitled
Abstract: No abstract text available
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet The SST13LP05 is a fully matched, dual-band power amplifier module PAM based on the highly-reliable InGaP/GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable power detectors, and low-current analog on/
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SST13LP05
SST13LP05
11a/b/g
GHz10/
DS75032A
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HMC490LP5
Abstract: No abstract text available
Text: HMC490LP5 v00.0404 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 16 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC490LP5 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2.5 dB • Point-to-Point Radios
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HMC490LP5
HMC490LP5
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Untitled
Abstract: No abstract text available
Text: HMC490 v03.0213 LOW NOISE AMPLIFIER - CHIP GaAs pHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz Typical Applications Features The HMC490 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios Gain: 27 dB
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HMC490
HMC490
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HMC455LP3
Abstract: HMC461LP3 hmc - 020
Text: HMC461LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain
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HMC461LP3
HMC461LP3
HMC455LP3
HMC455LP3
hmc - 020
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HMC-C026
Abstract: amplifier 10 GHz sma
Text: HMC-C026 v00.1005 WIDEBAND HIGH GAIN POWER AMPLIFIER MODULE, 2 - 20 GHz AMPLIFIERS - CONNECTORIZED MODULES 9 Features Gain: 30 dB @ 8 GHz P1dB Output Power: +26 dBm @ 8 GHz Noise Figure: 2.5 dB @ 8 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing
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HMC-C026
HMC-C026
amplifier 10 GHz sma
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HMC490
Abstract: HMC-490
Text: HMC490 v01.1003 MICROWAVE CORPORATION GaAs PHEMT MMIC LOW NOISE HIGH IP3 AMPLIFIER, 12 - 17 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC490 is ideal for use as either a LNA or driver amplifier for: Noise Figure: 2 dB • Point-to-Point Radios
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HMC490
HMC490
HMC-490
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DCS-1800MHz
Abstract: No abstract text available
Text: RF2417 Preliminary TRI-BAND LOW NOISE AMPLIFIER Typical Applications • Tri-Band EGSM/DCS/PCS Handsets • Dual-Band EGSM/DCS Handsets Product Description The RF2417 is a highly-integrated, low-power and lowcost tri-band LNA for EGSM-based multi-band handset
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RF2417
RF2417
16-pin
-35dBm,
940MHz
1845MHz
1960MHz
DCS-1800MHz
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12-Contact
Abstract: No abstract text available
Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15B Data Sheet The SST12LP15B is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 GHz frequency
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SST12LP15B
SST12LP15B
16-contact
12-contact
DS75029A
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Untitled
Abstract: No abstract text available
Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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TGF2819-FL
TGF2819-FL
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HK1608
Abstract: NJG1105F DCS1800 GRM36 HK1005
Text: NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and
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NJG1105F
NJG1105F
DCS1800,
1860MHz
1960MHz
2140MHz
1860/1960/2140MHz
HK1608
DCS1800
GRM36
HK1005
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Untitled
Abstract: No abstract text available
Text: AST54S High Gain, Low Noise Amplifier Features Description 19.0 dB Gain at 900 MHz 0.4 dB NF at 900 MHz 30 dBm OIP3 at 900 MHz 18 dBm P1dB at 900 MHz One-stage LNA AST54S is a one-stage LNA which has a low noise, high gain, and high linearity over a wide range of
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AST54S
AST54S
OT343
OT343
23x13
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FS
T1G4020036-FS
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Untitled
Abstract: No abstract text available
Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers
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T1G4020036-FL
T1G4020036-FL
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MC13821
Abstract: QFN-12
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: MC13821 Rev. 1.5, 09/2009 MC13821 Package Information Plastic Package Case 1345 QFN–12 MC13821 Low Noise Amplifier with Bypass Switch 1 Introduction The MC13821 is a high gain LNA with extremely low
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MC13821
MC13821
QFN-12
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EVM7
Abstract: No abstract text available
Text: RMPA5251 4.90–5.85 GHz InGaP HBT Linear Power Amplifier General Description Features The RMPA5251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and
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RMPA5251
RMPA5251
26dBm
EVM7
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LLV1005FB10NJ
Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
Text: RMPA5251-251 Raytheon RF Components 4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics1 The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with
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RMPA5251-251
RMPA5251-251
LLV1005FB10NJ
RAYTHEON
GRM21BR60J106K
LLV1005FB15NJ
RMPA5251
grm39
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MP4T243
Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages
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MP4T243
MP4T24300
MP4T24335
Bipolar Transistor
ma4t24335
Transistor 35 MICRO-X
MP4T24335
S21E
S22E
Silicon Bipolar Transistor MICRO-X
low noise transistors microwave
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SUF-4000
Abstract: 15 GHz high power amplifier
Text: Preliminary SUF-4000 Product Description Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from
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SUF-4000
SUF-4000
EDS-105418
15 GHz high power amplifier
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spf-5122
Abstract: SPF-5122Z spf 51z SPF 188 SPF5122z SPF512 MSL-1 MCH185A101JK spf5122 EVB1
Text: Preliminary Information SPF-5122Z 100-4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 100-4000 MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations.
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SPF-5122Z
SPF-5122Z
SPF-5122Z-EVB1
EDS-105470
spf-5122
spf 51z
SPF 188
SPF5122z
SPF512
MSL-1
MCH185A101JK
spf5122
EVB1
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HMC453QS16G
Abstract: No abstract text available
Text: HMC453QS16G v00.0504 MICROWAVE CORPORATION AMPLIFIERS - SMT 8 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Features Typical Applications The HMC453QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +50 dBm • GSM, GPRS & EDGE
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HMC453QS16G
HMC453QS16G
CDMA2000
QSOP16G
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Amplifier Research rf power amplifier schematic
Abstract: design of multi section directional coupler Spiral Inductor technology 10 ghz driver amplifier mmic distributed amplifier c-band 50 Watt power amplifier c-Band mmic core chip pin diode limiter 3 ghz 1 watt directional coupler chip 8 GHz
Text: TECHNICAL FEATURE HIGH PERFORMANCE WIDEBAND MSAG GAIN BLOCK/DRIVER AMPLIFIER MMICS USING MLP TECHNOLOGY The multi-level plating MLP process has been used to develop a family of wideband, low noise, generic gain block and driver amplifier MMICs operating
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CGB8001-SC
Abstract: No abstract text available
Text: DC-2.8 GHz InGaP HBT Matched Gain Block Amplifier July 2008 - Rev 16-Jul-08 CGB8001-SC Features Functional Block Diagram SOT-89 18 dBm Linear Power @ 2140 MHz 15.5 dB Gain @ 2140 MHz 12 dB Gain @ 2700 MHz 27 dBm P1dB @ 2140 MHz Low Performance Variation Over Temperature
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16-Jul-08
CGB8001-SC
OT-89
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HP MMIC
Abstract: MSA-0670
Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0670 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 1.0 GHz • High Gain: 19.5␣ dB Typical at 0.5 GHz • Low Noise Figure:
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MSA-0670
MSA-0670
HP MMIC
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AWL9555
Abstract: 802.11a whdi AWL9555RS35P8 802.11a Amplifier
Text: AWL9555 802.11a/n WLAN Power Amplifier Data Sheet - Rev 2.1 FEATURES • -33 dB Dynamic EVM @ POUT = +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 220 mA Supply Current @ +19 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 29 dB of Linear Power Gain
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AWL9555
11a/n
11a/n
AWL9555
802.11a
whdi
AWL9555RS35P8
802.11a Amplifier
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