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    A 12-15 GHZ HIGH GAIN AMPLIFIER Search Results

    A 12-15 GHZ HIGH GAIN AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    A 12-15 GHZ HIGH GAIN AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLM18HD182SN1D

    Abstract: RC0402FR-07300RL YAGEO RC0402FR NXP MARKING 11* 3PIN marking code 6w LQG15HS3N9S02D
    Text: SO T8 9 BGA3012 1 GHz 12 dB gain wideband amplifier MMIC Rev. 2 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency


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    PDF BGA3012 BGA3012 BLM18HD182SN1D RC0402FR-07300RL YAGEO RC0402FR NXP MARKING 11* 3PIN marking code 6w LQG15HS3N9S02D

    CFA0301-A

    Abstract: CF003-01 CFB0301-B CFB0301
    Text: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon


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    PDF CF003-01 15-Jul-08 CF003-01 CF003-01-000X CFA0301-A CFB0301-B CFB0301

    Untitled

    Abstract: No abstract text available
    Text: HMC625LP5 / 625LP5E v08.0210 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC625LP5 625LP5E 25mm2

    Untitled

    Abstract: No abstract text available
    Text: HMC926LP5E v00.0810 0.5 dB LSB 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 700 - 2700 MHz Typical Applications Features The HMC926LP5E is ideal for: Gain Control Range in 0.5 dB Steps : @ 900 MHz, +6.5 to +38 dB @ 1900 MHz, +1 to +32.5 dB @ 2600 MHz, -4 to +27.5 dB


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    PDF HMC926LP5E HMC926LP5E

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    Abstract: No abstract text available
    Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC625LP5 625LP5E 25mm2

    Untitled

    Abstract: No abstract text available
    Text: HMC743LP6C / 743LP6CE v05.1011 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Designer’s Kit Available Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure


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    PDF HMC743LP6C 743LP6CE HMC743LP6

    HMC743LP6C

    Abstract: No abstract text available
    Text: HMC743LP6C / 743LP6CE v05.1011 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Designer’s Kit Available Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure


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    PDF HMC743LP6C 743LP6CE

    Untitled

    Abstract: No abstract text available
    Text: HMC625LP5 / 625LP5E v09.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC625LP5 E is ideal for: -13.5 to +18 Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC625LP5 625LP5E 25mm2

    H743

    Abstract: No abstract text available
    Text: HMC743LP6C / 743LP6CE v04.0311 0.5 dB LSB GaAs MMIC DUAL 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC743LP6C 743LP6CE H743

    Untitled

    Abstract: No abstract text available
    Text: HMC743LP6C / 743LP6CE v02.0709 0.5 dB LSB GaAs MMIC 12-BIT DIGITAL VARIABLE GAIN AMPLIFIER, DC - 4 GHz Typical Applications Features The HMC743LP6C E is ideal for: -45 to +18 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC743LP6C 743LP6CE 12-BIT 36mm2

    Untitled

    Abstract: No abstract text available
    Text: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC627LP5 627LP5E 25mm2

    Untitled

    Abstract: No abstract text available
    Text: HMC627LP5 / 627LP5E v10.0410 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER, 50 MHz - 1 GHz Typical Applications Features The HMC627LP5 E is ideal for: -11.5 to 20 dB Gain Control in 0.5 dB Steps • Cellular/3G Infrastructure Power-up State Selection


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    PDF HMC627LP5 627LP5E 25mm2

    Untitled

    Abstract: No abstract text available
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Preliminary Specifications SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz


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    PDF SST13LP05 SST13LP052 S71318-00-000

    SST13LP05

    Abstract: SST13LP05-MLCF SST13LP05-MLCF-K
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Preliminary Specifications SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz


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    PDF SST13LP05 SST13LP052 80Taipei S71318-00-000 SST13LP05 SST13LP05-MLCF SST13LP05-MLCF-K

    variable frequency circuit diagram

    Abstract: No abstract text available
    Text: HMC681LP5 / 681LP5E v02.0510 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER w/ SERIAL CONTROL, DC - 1 GHz Typical Applications Features The HMC681LP5 E is ideal for: +13.5 dB to +45 dB Gain Control in 0.5 dB Steps • IF & RF Applications High Output IP3: +36 dBm


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    PDF HMC681LP5 681LP5E 25mm2 variable frequency circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: MECX10W-3 X-Band GaAs pHEMT High Power Amplifier Main Features VG VD 0.25µm GaAs pHEMT Technology 8.5 – 11.1 GHz full performances Frequency Range Saturated Output Power ≥ 11W PAE = 35% - 44% VG VD Small Signal Gain > 27 dB Bias: Vd = 8V, Id = 2.5A, Vg = -0.45V Typ.


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    PDF MECX10W-3 MECX10W-3

    Untitled

    Abstract: No abstract text available
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet The SST13LP05 is a fully matched, dual-band power amplifier module PAM based on the highly-reliable InGaP/GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable power detectors, and low-current analog on/


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    PDF SST13LP05 SST13LP05 11a/b/g GHz10/ DS75032A

    Untitled

    Abstract: No abstract text available
    Text: HMC681LP5 / 681LP5E v02.0510 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER w/ SERIAL CONTROL, DC - 1 GHz Typical Applications Features The HMC681LP5 E is ideal for: +13.5 dB to +45 dB Gain Control in 0.5 dB Steps • IF & RF Applications High Output IP3: +36 dBm


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    PDF HMC681LP5 681LP5E 25mm2

    Untitled

    Abstract: No abstract text available
    Text: HMC681LP5 / 681LP5E v03.1010 0.5 dB LSB GaAs MMIC 6-BIT DIGITAL VARIABLE GAIN AMPLIFIER w/ SERIAL CONTROL, DC - 1 GHz Typical Applications Features the HmC681lp5 e is ideal for: +13.5 db to +45 db gain Control in 0.5 db steps • if & rf applications High Output ip3: +36 dbm


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    PDF HMC681LP5 681LP5E 25mm2

    Untitled

    Abstract: No abstract text available
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz


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    PDF SST13LP05 SST13LP052 16F-6, S71318-02-000

    MICROWAVE TRANSISTOR

    Abstract: No abstract text available
    Text: HMC455LP3 v00.1102 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB


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    PDF HMC455LP3 HMC455LP3 MICROWAVE TRANSISTOR

    SST13LP05

    Abstract: SST13LP05-MLCF SST13LP05-MLCF-K
    Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet SST13LP052.4 - 2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier FEATURES: • High Gain: – Typically 29 dB gain across 2.4-2.5 GHz – Typically 29-26 dB gain across 4.9-5.8 GHz


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    PDF SST13LP05 SST13LP052 16F-6, S71318-02-000 SST13LP05 SST13LP05-MLCF SST13LP05-MLCF-K

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos - 3 V, IDS = 10 m A LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 21 7.5 dB typical at 12 GHz 18 ffl 15 < a La s 0.3 |im, Wo = 280 jun LOW COST PLASTIC PACKAGING


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    PDF NE76038 NE76038 reliab121 NE76038-T1

    LTA 703 S

    Abstract: EM 408 gps beta e 555
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:


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    PDF NE721S01 NE721S01 24-Hour LTA 703 S EM 408 gps beta e 555