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    A 122 TRANSISTOR Search Results

    A 122 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    A 122 TRANSISTOR Price and Stock

    onsemi MMBT2907ALT3G

    Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MMBT2907ALT3G 50,000
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    • 10000 $0.0141
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    Semiconductors 2N6724

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N6724 122
    • 1 $1.89
    • 10 $1.89
    • 100 $0.973
    • 1000 $0.33
    • 10000 $0.24
    		Buy Now

    Microchip Technology Inc JANTXV2N5581

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com JANTXV2N5581
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    • 100 $10.75
    • 1000 $10.53
    • 10000 $10.53
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    Microchip Technology Inc JANTXV2N5582

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com JANTXV2N5582
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    • 100 $10.75
    • 1000 $10.53
    • 10000 $10.53
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    onsemi NTD3055-150T4G

    N-Channel 60 V 122 mOhm 28.8 W Surface Mount Power MOSFET - TO-252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTD3055-150T4G
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    A 122 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KT827A

    Abstract: SDT7530 SDT80 1748-1820 BLX84 BLX86 sk3561 BLX87
    Text: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A hFE fT ICBO Max Max ton Max on ON) Min (Hz) (A) (a) 97 100 100 100 100 100 100 122 122 125 150 150 175 175 175 175 175 175 175 20 75 30 30 750 10 30 30 20 20 20 20 20 20 30 175


    Original     		PDF SDT3876 SML8003 SML8013 SML8016 SML8071 2N4211 2N3599 SDT44333 KT827V KT827A SDT7530 SDT80 1748-1820 BLX84 BLX86 sk3561 BLX87

    TIP120

    Abstract: TIP121 TIP122 TRANSISTOR tip122 features equivalent of TIP122 TRANSISTOR tip122 Darlington TRANSISTOR NPN
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP120, 121, 122 Darlington TRANSISTOR NPN TO-220 FEATURES Power dissipation 1. BASE 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current 5 A ICM: Collector-base voltage


    Original     		PDF O-220 TIP120, O-220 TIP120: TIP121: TIP122: TIP121 TIP122 100mA, TIP120 TIP121 TIP122 TRANSISTOR tip122 features equivalent of TIP122 TRANSISTOR tip122 Darlington TRANSISTOR NPN

    5c1 zener diode

    Abstract: cornell tsc 1N4148 593D NCP1729 NCP1729SN35T1 PZT751 TL431 TLV431
    Text: NCP1729 Switched Capacitor Voltage Inverter The NCP1729 is a CMOS charge pump voltage inverter that is designed for operation over an input voltage range of 1.15 V to 5.5 V with an output current capability in excess of 50 mA. The operating current consumption is only 122 mA, and a power saving shutdown


    Original     		PDF NCP1729 NCP1729 r14525 NCP1729/D 5c1 zener diode cornell tsc 1N4148 593D NCP1729SN35T1 PZT751 TL431 TLV431

    5c1 zener diode

    Abstract: NCP1729 tl431 sot23 cornell tsc zener 5c2 1N4148 593D NCP1729SN35T1 NCP1729SN35T1G TLV431
    Text: NCP1729 Switched Capacitor Voltage Inverter The NCP1729 is a CMOS charge pump voltage inverter that is designed for operation over an input voltage range of 1.15 V to 5.5 V with an output current capability in excess of 50 mA. The operating current consumption is only 122 mA, and a power saving shutdown


    Original     		PDF NCP1729 NCP1729 NCP1729/D 5c1 zener diode tl431 sot23 cornell tsc zener 5c2 1N4148 593D NCP1729SN35T1 NCP1729SN35T1G TLV431

    OPB725A-18Z

    Abstract: electrical cabling kodak
    Text: Long Distance Reflective Switch OPB725A-18Z Features: • • • • Remote mounting in 18 mm hole 48” 122 cm 26 AWG wired with mounting nuts Non-contact infrared switch Up to 24” or more reflective distance depending on object Description: The OPB725A-18Z uses a high power output LED modulated by a synchronous driver/detector logic output


    Original     		PDF OPB725A-18Z OPB725A-18Z 20cmX20cm] electrical cabling kodak

    range long sensor reflective

    Abstract: OPB725 infrared remote sensor infrared distance sensor hydrocarbon sensor OPB725A-18Z travel sensor
    Text: Long Distance Reflective Switch OPB725 Features: • • • • Remote mounting in 18 mm hole 48” 122 cm 26 AWG wired with mounting nuts Non-contact infrared switch Up to 24” or more reflective distance depending on object Description: OPB725 uses an Infrared LED and Photologic sensor in a reflective switch configuration. The assembly is


    Original     		PDF OPB725 OPB725 20cmX20cm] range long sensor reflective infrared remote sensor infrared distance sensor hydrocarbon sensor OPB725A-18Z travel sensor

    Untitled

    Abstract: No abstract text available
    Text: SK 60 MD 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  9 1 6  + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SK 85 MH 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  9 1 6  + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SK 85 MH 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  9 1 6  + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8 ! ;2 <<< = 1-2


    Original     		PDF 85MH10

    A 122 transistor

    Abstract: No abstract text available
    Text: SK 115 MD 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  9 1 6  + ,2 .6 1 : Values Units 122 4 /2 ,2 72 1/2 8 8 ! ;2 <<< = 1-2 . ,2 72 1/2 8 8


    Original     		PDF 115MD10 A 122 transistor

    Untitled

    Abstract: No abstract text available
    Text: SK 115 MAA 10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 0## 03## 5 5  + /- .         + /- ,2 .6 1  : 6  + .6 ; Values Units 122 4 /2 7- 8- 9 9 ! <2 = > 1-2 . 7- 8- 9 9 ! <2 = > 1-2 . Inverse diode


    Original     		PDF

    equivalent of TIP122

    Abstract: TIP120 TIP122 DARLINGTON 3A 100V npn tip122 data TIP121
    Text: Inchange Semiconductor Product Specification TIP120/121/122 Silicon NPN Darlington Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type TIP125/126/127 APPLICATIONS


    Original     		PDF TIP120/121/122 O-220C TIP125/126/127 TIP120 TIP121 TIP122 equivalent of TIP122 TIP120 TIP122 DARLINGTON 3A 100V npn tip122 data TIP121

    TIP120

    Abstract: TIP122 Darlington 30A tip120 darlington equivalent of TIP122 tip121 tip122v
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP120/121/122 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP125/126/127 APPLICATIONS


    Original     		PDF TIP120/121/122 O-220C TIP125/126/127 TIP120 TIP121 TIP122 TIP120 TIP122 Darlington 30A tip120 darlington equivalent of TIP122 tip121 tip122v

    equivalent of TIP122

    Abstract: TIP122
    Text: TIP120/121/122 TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 1 TO-220 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter


    Original     		PDF TIP120/121/122 TIP125/126/127 O-220 TIP120 TIP121 TIP122 equivalent of TIP122

    TIC 122 Transistor

    Abstract: bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157
    Text: .2 5 C D • 023SbO S NPN Silicon Transistors GQGMCH? *? MSIEG ■ _ W ~/l SIEMENS A K T IE N G E S E L L S C H A F C 1 2 1 1 ! B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32


    OCR Scan     		PDF 023SbO BC-121 blu122, BC123 0235bOS QQQ41Q3 BC121. BC122, TIC 122 Transistor bc 147 B transistor FOR TRANSISTOR BC 149 B BC 148 TRANSISTOR transistor 45 f 122 NPN transistor bc 148 transistor bc 146 BC 148 L transistor bc 148 transistor BC 157

    TO-3PMLH

    Abstract: 2sd1886c
    Text: Property http :// semcon. sanyo. com/en/ search/property. php?clcd= 122&prod=2SD 1886C High-Voltage High-Speed Switching Transistors—Horizonal Deflection Switching Transistors □ sp lay a list Discrete Devices Product Information Type No. 2SD1886C Discrete Devices > Transistors > High-Voltage High-Speed Switching Transistors > Horizonal


    OCR Scan     		PDF 2SD1886C 2SD1886C TO-3PMLH

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS


    OCR Scan     		PDF RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 800mA) RN2221 RN1221

    MC1112

    Abstract: LTED MD1122 MD11 MD1120 MD1120F MD1121 MD1127 MQ1120
    Text: MDI 120, MDI 120F SILICON MDI121 MDI 122 MQ1120 MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed fo r use as d iffe r e n tia l a m p lifie rs , dua l general-purpose a m p lifie rs, f r o n t end d e te c to rs and te m p e ra tu re com pensa tion


    OCR Scan     		PDF MD1120, MD1120F MD1121 MD1122 MQ1120 MD1120 MD1120F MDT121 MD1122) MC1112 LTED MD11 MD1127 MQ1120

    02n60

    Abstract: JD127
    Text: motorola sc x s t r s /r 12E D • I b3b7E54 GOflSSb? t f | 'T 1 3 3 - / 2 ? 7”-33-3/ MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 122 PNP M JD 127 Com plem entary Darlington Pow er Transistors DPAK For Surface M ount A pplications Designed for general purpose am plifier and low speed switching applications.


    OCR Scan     		PDF b3b7E54 120-TIP TIP125-T1P127 b3b72S4 MJD122 MJD127 02n60 JD127

    fr91a

    Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
    Text: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72


    OCR Scan     		PDF BFG96 BFP96 BFP505 BFP520 BFP540 BFQ33C BFQ63 BFQ65 BFQ66 BFQ161 fr91a philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72

    A1241

    Abstract: c4684 2_s transistors c3072 B834 SA1357 c4793
    Text: S urface Mo unt Device 4 Power Mold Transistors (D PACK) E lectrical C h a ra cte ristics {T a= 2 5°C ) A p plication T yp e No. VCEO (V) Ic (A) Pc (W ) Pc* (W ) Tj (°C) C o m plem en tary 2 S A 1225 D rive r stage. Pow er am plification. -160 -1.5 1.0


    OCR Scan     		PDF A1241 2SD1221 2SC4681 2SC4685 c4684 2_s transistors c3072 B834 SA1357 c4793

    NB111

    Abstract: NB121 NB211E LB 122 NPN U6501 NB212E
    Text: NATL SEMICOND {DISCRETE} 2fl 650 1130 NATL SEMICOND, Q. z cl CO CM j>i|b S D113 □ QOaSSTa DISCRETE 28C National Semiconductor T - z 35 5 9 3 ? - Z - / T- *• * CM CM CM rCÛ z r* Z CL z NB121,122,123(PNP) 100mA 9eneral purpose transistors (TI package and lead coding


    OCR Scan     		PDF bS0113G NB121 100mA 400mV to-92 fcj501130 NB021EV NB211YY NR001E NB111 NB211E LB 122 NPN U6501 NB212E

    TIPI27

    Abstract: TIPI20 TIPI22 TIPI21 tipi transistor TIP120 TIP121 TIP122 TIP125
    Text: TIPI20, TIP121, TIP122 TIPI 25, TIPI26, TIP I27 L TIP120,121,122 TIP125,126,127 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications DIM A B C E F G H J K L M N T— < • N 1 — cl < Ot * J 3


    OCR Scan     		PDF TIPI20, TIP121, TIP122 TIPI26, TIPI27 TIP120 TIP125 TIPI27 TIPI20 TIPI22 TIPI21 tipi transistor TIP121

    BFS67

    Abstract: 310M ft06 HSC5458 200S A190 A192 A193 A390 T072
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N P N 1 10. SILICON PNP 11. SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE M A X . RATIINGS Ä 2 5 C II MIN. M A X Pc T 6 T T IDERATE FREE I'A E I Ic


    OCR Scan     		PDF NPN110. NPC214N NPC215N NPC216N SI212N BFS67 310M ft06 HSC5458 200S A190 A192 A193 A390 T072