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    A 1908 TRANSISTOR Search Results

    A 1908 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A 1908 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ANSI/TIA/EIA-644

    Abstract: DS90LV032A MAX9124 MAX9125 MAX9125ESE MAX9125EUE MAX9126 MAX9126EUE
    Text: 19-1908; Rev 0; 5/01 KIT ATION EVALU E L B A AVAIL Quad LVDS Line Receivers with Integrated Termination Features ♦ Integrated Termination Eliminates Four External Resistors MAX9126 ♦ Pin Compatible with DS90LV032A ♦ Guaranteed 500Mbps Data Rate ♦ 300ps Pulse Skew (max)


    Original     		PDF MAX9126) DS90LV032A 500Mbps 300ps TIA/EIA-644 MAX9125EUE MAX9125ESE MAX9126EUE MAX9126ESE MAX9126 ANSI/TIA/EIA-644 DS90LV032A MAX9124 MAX9125 MAX9125ESE MAX9125EUE MAX9126 MAX9126EUE

    MAX9126

    Abstract: No abstract text available
    Text: 19-1908; Rev 0; 5/01 KIT ATION EVALU E L B A AVAIL Quad LVDS Line Receivers with Integrated Termination Features ♦ Integrated Termination Eliminates Four External Resistors MAX9126 ♦ Pin Compatible with DS90LV032A ♦ Guaranteed 500Mbps Data Rate ♦ 300ps Pulse Skew (max)


    Original     		PDF MAX9126) DS90LV032A 500Mbps 300ps TIA/EIA-644 MAX9125/MAX9126 MAX9125/MAX9126 500Mbps 250MHz) MAX9126

    A 1908 transistor

    Abstract: FE55-0005
    Text: L-Band Voltage Controlled Oscillator Features VCC N/C N/C 1 GND N/C GND RF OUT GND N/C The FE55-0005 is ideally suited for use as a stand-alone signal source or as part of a PLL signal source for applications in L-Band. The FE55-0005 includes active transistor


    Original     		PDF FE55-0005 FQFP-16 as55-0005 FE55-0005 A 1908 transistor

    phase shifter

    Abstract: No abstract text available
    Text: RO-P-DS-3069 A Preliminary Information MAPCGM0001 1.0-1.9 GHz Phase Shifter MAPCGM0001 Features ♦ ♦ ♦ ♦ ♦ ♦ 1.0 to 1.9 GHz Operation 6 Bit Phase Shifter 360º Coverage, LSB = 5.6º TTL Control Inputs Self-Aligned MSAG MESFET Process 6mm, 28 Lead, FQFP-N Package


    Original     		PDF RO-P-DS-3069 MAPCGM0001 MAPCGM0001 MAPCGM0001-SMB phase shifter

    Untitled

    Abstract: No abstract text available
    Text: RO-P-DS-3047 B Preliminary Information MAAMGM0002-DIE MAAMGM0002-DIE 1.0 – 18.0 GHz 0.1W Distributed Amplifier Features ♦ ♦ ♦ ♦ 0.1 Watt Saturated Output Power Level 1.0 to 18.0 GHz Operation Select-at-Test Biasing Self-Aligned MSAG MESFET Process


    Original     		PDF RO-P-DS-3047 MAAMGM0002-DIE MAAMGM0002-Die

    Untitled

    Abstract: No abstract text available
    Text: RO-P-DS-3047 C Preliminary Information MAAMGM0002-DIE MAAMGM0002-DIE 1.0 – 18.0 GHz 0.1W Distributed Amplifier Features ♦ ♦ ♦ ♦ ♦ 0.1 Watt Saturated Output Power Level 1.0 to 18.0 GHz Operation 4 dB Typical Noise Figure Select-at-Test Biasing Self-Aligned MSAG MESFET Process


    Original     		PDF RO-P-DS-3047 MAAMGM0002-DIE MAAMGM0002-Die

    Untitled

    Abstract: No abstract text available
    Text: RO-P-DS-3005 A Preliminary Information MA03503D 8.0-11.0 GHz Parallel Input Gain/Phase Control MMIC MA03503D Features ♦ ♦ ♦ ♦ ♦ 6-bit Phase Shifter and 5-bit Attenuator Parallel Control Input 50 Ω Input and Output Impedance GaAs MSAG Process


    Original     		PDF RO-P-DS-3005 MA03503D MA03503D

    Untitled

    Abstract: No abstract text available
    Text: RO-P-DS-3076 Preliminary Information MAAPGM0040 11.0-15.0 GHz 0.5W Power Amplifier MAAPGM0040 Features ♦ 0.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process APGM0040 YWWLLLL Primary Applications ♦ Point-to-Point Radio


    Original     		PDF RO-P-DS-3076 MAAPGM0040 APGM0040 MAAPGM0040 100pF

    apgm

    Abstract: APGM0038
    Text: RO-P-DS-3060 C Preliminary Information MAAPGM0038 MAAPGM0038 8.0-12.0 GHz 1.2W Power Amplifier Features ♦ ♦ ♦ ♦ 1.2 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation Self-Aligned MSAG MESFET Process High Performance Ceramic Bolt Down Package


    Original     		PDF RO-P-DS-3060 MAAPGM0038 APGM0038 MAAPGM0038 100pF apgm

    APGM0030

    Abstract: No abstract text available
    Text: RO-P-DS-3074 Preliminary Information MAAPGM0030 MAAPGM0030 5.0-9.0 GHz 1W Power Amplifier Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process APGM0030 YWWLLLL Primary Applications ♦ Multiple Band Point-to-Point Radio


    Original     		PDF RO-P-DS-3074 MAAPGM0030 APGM0030 MAAPGM0030 100pF

    APGM0035S

    Abstract: M567 tb
    Text: RO-P-DS 3088 Preliminary Information MAAPGM0035S 2.5-5.5 GHz 1.6 W Power Amplifier Features ♦ ♦ ♦ ♦ MAAPGM0035S 2.5-5.5 GHz GaAs MMIC Amplifier 1.6 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation MSAG MESFET Process High Performance Ceramic Bolt Down Package


    Original     		PDF MAAPGM0035S APGM035S MAAPGM0035S APGM0035S M567 tb

    Untitled

    Abstract: No abstract text available
    Text: RO-P-DS-3014 A Preliminary Information MAAPGM0027-DIE 2.0-4.0 GHz 1W Power Amplifier MAAPGM0027-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability


    Original     		PDF RO-P-DS-3014 MAAPGM0027-DIE MAAPGM0027-Die 10reform

    Untitled

    Abstract: No abstract text available
    Text: RO-P-DS-3017 A Preliminary Information MAAPGM0036-DIE 1.2-3.2 GHz 1.2W Power Amplifier MAAPGM0036-DIE Features ♦ ♦ ♦ ♦ 1.2 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability


    Original     		PDF RO-P-DS-3017 MAAPGM0036-DIE MAAPGM0036-Die

    Untitled

    Abstract: No abstract text available
    Text: RO-P-DS-3072 A Preliminary Information MAAPGM0041 11.0-15.0 GHz 1.3W Power Amplifier MAAPGM0041 Features ♦ ♦ ♦ ♦ 1.3 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process High Performance Ceramic Bolt Down Package


    Original     		PDF RO-P-DS-3072 MAAPGM0041 APGM0041 MAAPGM0041 100pF

    Untitled

    Abstract: No abstract text available
    Text: RO-P-DS-3072 B Preliminary Information MAAPGM0041 11.5-15.0 GHz 1.0W Power Amplifier MAAPGM0041 Features ♦ ♦ ♦ ♦ 1.3 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process High Performance Ceramic Bolt Down Package


    Original     		PDF RO-P-DS-3072 MAAPGM0041 APGM0041 MAAPGM0041 100pF

    MAAPGM0036

    Abstract: APGM0036 CR-15 MAAPG
    Text: RO-P-DS-3075 Preliminary Information MAAPGM0036 1.2-3.2 GHz 1.2W Power Amplifier MAAPGM0036 Features ♦ 1.2 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ Self-Aligned MSAG Process Primary Applications ♦ ♦ ♦ ♦


    Original     		PDF RO-P-DS-3075 MAAPGM0036 APGM0036 MAAPGM0036 100pF APGM0036 CR-15 MAAPG

    Untitled

    Abstract: No abstract text available
    Text: Advance Information RO-P-DS-3085 MAAPGM0052-DIE MAAPGM0052-DIE 4.0-18.0 GHz Distributed Power Amplifier Features ♦ ♦ ♦ ♦ 0.5 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability


    Original     		PDF RO-P-DS-3085 MAAPGM0052-DIE MAAPGM0052-Die

    Untitled

    Abstract: No abstract text available
    Text: RO-P-DS-3077 Preliminary Information MAAPGM0029 3.6-6.5 GHz 1W Power Amplifier MAAPGM0029 Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 4-10V Operation ♦ GaAs MSAG Process APGM0029 YWWLLLL Primary Applications ♦ Wireless Local Loop


    Original     		PDF RO-P-DS-3077 MAAPGM0029 APGM0029 MAAPGM0029 100pF

    MAAPGM0030-DIE

    Abstract: No abstract text available
    Text: RO-P-DS-3021 A Preliminary Information MAAPGM0030-DIE 5.0-9.0 GHz 1W Power Amplifier MAAPGM0030-DIE Features ♦ ♦ ♦ ♦ 1 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability


    Original     		PDF RO-P-DS-3021 MAAPGM0030-DIE MAAPGM0030-Die

    phase shifter

    Abstract: No abstract text available
    Text: RO-P-DS-3081 Preliminary Information MAPCGM0002 3.5-6.0 GHz Phase Shifter MAPCGM0002 Features ♦ ♦ ♦ ♦ ♦ 6 Bit Phase Shifter 360º Coverage, LSB = 5.6º TTL Control Inputs Self-Aligned MSAG MESFET Process 6mm, 28 Lead, FQFP-N Package Description


    Original     		PDF RO-P-DS-3081 MAPCGM0002 MAPCGM0002 RO-P-DS-3081 MAPCGM0002-SMB phase shifter

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RO-P-DS-3084 MAAMGM0007-DIE 2.0-18.0 GHz Distributed Amp/Gain Block MAAMGM0007-DIE Features ♦ ♦ ♦ ♦ ♦ 0.25 Watt Saturated Output Power Level Single Bias Operation Variable Drain Voltage 4-6V Operation GaAs MSAG Process Proven Manufacturability and Reliability


    Original     		PDF RO-P-DS-3084 MAAMGM0007-DIE MAAMGM0007-Die

    APGM0022

    Abstract: CR-15
    Text: RO-P-DS-3078 A Preliminary Information MAAPGM0022 3.5-6.0 GHz 1.6W Power Amplifier MAAPGM0022 Features ♦ ♦ ♦ ♦ 1.6 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation Self-Aligned MSAG MESFET Process High Performance Ceramic Bolt Down Package


    Original     		PDF RO-P-DS-3078 MAAPGM0022 APGM0022 MAAPGM0022 100pF APGM0022 CR-15

    TRANSISTOR REPLACEMENT ECG

    Abstract: ECG Semiconductors transistor 171 DO-40 diode ECG190 ECG1906
    Text: PHILIPS E C G INC ECG Semiconductors 17E ECG 1902, ECG1906, ECG 1908 / 3-Terminal, Positive Fixed V R .200 ' Features • Output current of 100 m A • Internal thermal overload protection • Output transistor safe area protection • Internal short circuit current limit


    OCR Scan     		PDF ECG1902, ECG1906, ECG1908 T--58--11--13 TRANSISTOR REPLACEMENT ECG ECG Semiconductors transistor 171 DO-40 diode ECG190 ECG1906

    TDA1908A

    Abstract: A 1908 transistor a830s BA810S 1908A
    Text: S G S-THOMSON 07E » | 7=12^537 O O là S b â 0 | 7929225 S G S SEMICONDUCTOR CORP F ' ~ TDA1908 LINEAR INTEGRATED CIRCUITS 8W AUDIO A M P LIFIER The T D A 1908 is a monolithic integrated circuit in 12 lead quad In-line plastic package Intended for low


    OCR Scan     		PDF TDA1908 TDA1908A A 1908 transistor a830s BA810S 1908A