A 512 J Search Results

A 512 J Result Highlights (5)

Part	Manufacturer	Description
74AC11086D	Texas Instruments	Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85
74AC11244DW	Texas Instruments	Octal Buffers/Drivers 24-SOIC -40 to 85
74AC11245DW	Texas Instruments	Octal Bus Transceivers 24-SOIC -40 to 85
74AC16244DGGR	Texas Instruments	16-Bit Buffers And Line Drivers With 3-State Outputs 48-TSSOP -40 to 85
74ACT11000DR	Texas Instruments	Quadruple 2-Input Positive-NAND Gates 16-SOIC -40 to 85

A 512 J Price and Stock

Filter by Manufacturer


Murata Manufacturing Co Ltd GRM3195C2A512JA01D CAP CER 5100PF 100V C0G/NP0 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GRM3195C2A512JA01D	Cut Tape	3,990		1	1 $0.43 10 $0.257 100 $0.1643 1000 $0.11526 10000 $0.11526	Buy Now
	GRM3195C2A512JA01D	Digi-Reel	3,990		1	1 $0.43 10 $0.257 100 $0.1643 1000 $0.11526 10000 $0.11526	Buy Now
	GRM3195C2A512JA01D	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.09105	Buy Now
Avnet Americas	GRM3195C2A512JA01D	Reel		10 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 $0.07127	Buy Now
TME	GRM3195C2A512JA01D				4,000	1 - 10 - 100 - 1000 - 10000 $0.086	Get Quote
Chip1Stop	GRM3195C2A512JA01D	Cut Tape	2,298			1 - 10 $0.131 100 $0.0851 1000 $0.0539 10000 $0.0182	Buy Now
Murata Manufacturing Co Ltd GCM3195C2A512JA16D CAP CER 5100PF 100V C0G/NP0 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GCM3195C2A512JA16D	Cut Tape	1,515		1	1 $0.28 10 $0.165 100 $0.1028 1000 $0.07017 10000 $0.07017	Buy Now
	GCM3195C2A512JA16D	Digi-Reel	1,515		1	1 $0.28 10 $0.165 100 $0.1028 1000 $0.07017 10000 $0.07017	Buy Now
	GCM3195C2A512JA16D	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.05407	Buy Now
Avnet Americas	GCM3195C2A512JA16D	Reel		14 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 $0.04006	Buy Now
TME	GCM3195C2A512JA16D				4,000	1 - 10 - 100 - 1000 - 10000 $0.0481	Get Quote
E-Switch Inc PA512J SWITCH PB DPST 16A 125V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PA512J	Bulk			3,200	1 - 10 - 100 - 1000 - 10000 $1.4284	Buy Now
Newark	PA512J	Bulk			3,200	1 $1.98 10 $1.98 100 $1.98 1000 $1.98 10000 $1.71	Buy Now
RS	PA512J	Bulk		14 Weeks	3,200	1 - 10 - 100 - 1000 - 10000 $1.17	Get Quote
TME	PA512J				3,200	1 - 10 - 100 - 1000 - 10000 $1.43	Get Quote
RCD Components Inc RSF1A-512-JBW RES 5.1K OHM 5% 1W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RSF1A-512-JBW	Bulk			1,000	1 - 10 - 100 - 1000 $0.04909 10000 $0.04909	Buy Now
RCD Components Inc RSF1A-512-JTW RES 5.1K OHM 5% 1W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RSF1A-512-JTW	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.045	Buy Now

Find more A 512 J price and stock on Findchips.com

A 512 J Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Q62702-B479 Abstract: bb512 DIODE 512 Text: BB 512 Silicon Variable Capacitance Diode ● For AM tuning applications ● Specified tuning range 1 … 8 V BB 512 Type Ordering Code tape and reel Pin Configuration 1 2 Marking Package BB 512 Q62702-B479 C white M SOD-123 A Maximum Ratings Parameter Symbol	Original	PDF	Q62702-B479 OD-123 Q62702-B479 bb512 DIODE 512
AN1995 Abstract: M25P05-A Text: M25P05-A 512 Kbit, serial Flash memory, 50 MHz SPI bus interface Features • 512 Kbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (512 Kbit) in 0.85 s (typical) ■	Original	PDF	M25P05-A 2010h) AN1995 M25P05-A
d114 Abstract: D42 1400 B D89 SIX PIN diode D42 / 1400 D100 D101 D102 D103 D104 D105 Text: HANBit HCPMEM-512 EDO DRAM Board 512Mbyte 32M x 144-Bit organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC Part No. HCPMEM-512 GENERAL DESCRIPTION The HCPMEM-512 is a 32M x 144 bit Dynamic RAM high-density module, organized with four banks of 8M x 144 bits.	Original	PDF	HCPMEM-512 512Mbyte 144-Bit 8Mx144, HCPMEM-512 d114 D42 1400 B D89 SIX PIN diode D42 / 1400 D100 D101 D102 D103 D104 D105
vdfpn8 Abstract: AN1995 M25P05-A Text: M25P05-A 512 Kbit, serial Flash memory, 50 MHz SPI bus interface Features • 512 Kbit of Flash memory ■ Page Program up to 256 bytes in 1.4 ms (typical) ■ Sector Erase (256 Kbit) in 0.65 s (typical) ■ Bulk Erase (512 Kbit) in 0.85 s (typical) ■	Original	PDF	M25P05-A 2010h) vdfpn8 AN1995 M25P05-A
Untitled Abstract: No abstract text available Text: R XCR3512XL: 512 Macrocell CPLD DS081 v1.8 January 5, 2005 14 Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide	Original	PDF	XCR3512XL: DS081 XCR3512XL
VFQFPN8 Abstract: M25P05 M25P05-A ST10 Text: M25P05-A 512 Kbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 256 Bytes in 1.5ms (typical) ■ Sector Erase (256 Kbit) in 2 s (typical) ■ Bulk Erase (512 Kbit) in 3 s (typical)	Original	PDF	M25P05-A M25P05 M25P05is VFQFPN8 M25P05 M25P05-A ST10
Untitled Abstract: No abstract text available Text: R XCR3512XL: 512 Macrocell CPLD DS081 v1.5 July 15, 2003 14 Preliminary Product Specification Features Description • • • • • The XCR3512XL is a 3.3V, 512 macrocell CPLD targeted at power sensitive designs that require leading edge programmable logic solutions. A total of 32 function blocks provide	Original	PDF	XCR3512XL: DS081 XCR3512XL
CY62148E Abstract: No abstract text available Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Functional Description Features The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This	Original	PDF	CY62148EV30 CY62148E
M25P05 Abstract: M25P05-A ST10 Text: M25P05-A 512 Kbit, Low Voltage, Serial Flash Memory With 25 MHz SPI Bus Interface PRELIMINARY DATA FEATURES SUMMARY • 512 Kbit of Flash Memory ■ Page Program up to 256 Bytes in 2 ms (typical) ■ Sector Erase (256 Kbit) in 2 s (typical) ■ Bulk Erase (512 Kbit) in 3 s (typical)	Original	PDF	M25P05-A M25P05 M25P05. M25P05 M25P05-A ST10
CY62148E Abstract: CY62148e CY62148b Text: CY62148E MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This	Original	PDF	CY62148E CY62148e CY62148b
Untitled Abstract: No abstract text available Text: CY62148EV30LL Automotive 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 55 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30LL Automotive is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device	Original	PDF	CY62148EV30LL
CY62148E Abstract: No abstract text available Text: CY62148EV30 MoBL 4-Mbit 512 K x 8 Static RAM 4-Mbit (512 K × 8) Static RAM Features Functional Description • Very high speed: 45 ns ❐ Wide voltage range: 2.20 V to 3.60 V The CY62148EV30 is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features	Original	PDF	CY62148EV30 CY62148E
DA10 Abstract: DA16 DB10 IDT72511 IDT72521 Text: IDT72511 IDT72521 Parallel Bidirectional FIFO 512 x 18 & 1,024 x 18 FEATURES: DESCRIPTION: Two side-by-side FIFO memory arrays for bidirectional data transfers ♦ 512 x 18-Bit - 512 x 18-Bit IDT72511 ♦ 1,024 x 18-Bit - 1,024 x 18-Bit (IDT72521) ♦ 18-bit data buses on Port A side and Port B side	Original	PDF	IDT72511 IDT72521 18-Bit 18-Bit IDT72511) IDT72521) 18-to-18-bit DA10 DA16 DB10 IDT72511 IDT72521
EW-512 hall effect sensor Abstract: EW-512 4518 APPLICATION CIRCUITS 512 hall 512 hall effect sensor Text: Hybrid Hall Effect ICs EW-series EW-512 Shipped in bulk 500pcs/Bag EW-512 is composed of a Ultra-high sensitive InSb Hall element and a signal processing IC chip in a package. Bipolar Hall Supply Voltage Effect Latch 4.5~18Ｖ Hall Element Continuous	Original	PDF	EW-512 500pcs/Bag) EW-512 EW-512 hall effect sensor 4518 APPLICATION CIRCUITS 512 hall 512 hall effect sensor

Hitachi DSA00279 Abstract: No abstract text available Text: HM66WP18513/HM66WP36257 9M Flow Through Zero Bus Latency ZBL SRAM (HM66WP18513) 512-Kword x 18-bit (HM66WP36257) 256-Kword × 36-bit ADE-203-1285D (Z) Preliminary Rev. 0.4 Jun. 21, 2002 Description The HM66WP18513 is a synchronous fast static RAM organized as 512-Kword × 18-bit. The	Original	PDF	HM66WP18513/HM66WP36257 HM66WP18513) 512-Kword 18-bit HM66WP36257) 256-Kword 36-bit ADE-203-1285D HM66WP18513 Hitachi DSA00279
130-174 Abstract: 13-0174 Text: Table of Contents Frequency î m h - j Type G E N E R A L 30-88 25-50 25-54 130-174 138-174 138-174 144-174 130-174 108-174 220-225 220-225 406-512 445-470 410-512 406-512 158-162 148-512 406-488 25-1000 M O B I L E "On-Glass" B aseloaded Q uarter-w ave	OCR Scan	PDF
LM2469 Abstract: No abstract text available Text: LM 1247 LM1247 150 MHz I2C Compatible RGB Preamplifier with Internal 512 Character OSD ROM, 512 Character RAM and 4 DACs T ex a s In s t r u m e n t s Literature Number: SNOSA28C July 11, 2011 LM1247 Semiconductor 150 MHz I2C Compatible RGB Preamplifier with Internal 512	OCR Scan	PDF	LM1247 SNOSA28C LM1247 LM2469
A01 monolithic amplifier Abstract: A02 monolithic amplifier CCD LINEAR SENSOR 512 CCD linear array A03 monolithic amplifier CCD412A Loral linear image sensor transparent substrate Contact image sensor fairchild Text: LDRAL Fairchild Im aging Sensors C C D 4 1 2 A 512 x 512 Element Full Frame Image SenSOf FEATURES • 512 x 512 Photosite Array ■ 1£^m x 1£pim Pixel ■ 7.68mm x 7.68 mm Image Area ■ 100% Fill Factor ■ Multi-Pinned Phase MPP Option ■ Readout Noise Less Than 7 Electrons at 250k pixels/ sec	OCR Scan	PDF	CCD412A CCD412A A01 monolithic amplifier A02 monolithic amplifier CCD LINEAR SENSOR 512 CCD linear array A03 monolithic amplifier Loral linear image sensor transparent substrate Contact image sensor fairchild
Untitled Abstract: No abstract text available Text: NEC ¡j PD42273 Dual-Port Graphics Buffer NEC Electronics Inc. Description Features The /JPD42273 is a dual-port graphics buffer equipped with a 256Kx 4-bit random access port and a 512 x 4-bit serial read port. The serial read port is connected to an internal 2048-bit data register through a 512 x 4-bit	OCR Scan	PDF	PD42273 /JPD42273 256Kx 2048-bit fjPD42273 fiPD42273 JUPD42273
transistor c3-12 Abstract: acrian RF POWER TRANSISTOR C3-12 C3-12-2 C312 Text: 0182998 ACRIAN INC ~T? j>F\| 0 1 0 2 ^ 0 0DG13ai a ^ 3 ^ ö7 C3-12 GENERAL DESCRIPTION The C3-12 is a common emitter RF power transistor designed to provide 4 watts of power from a 12.5 volt supply across the 450-512 MHz band. 4 WATT - 12.5 VOLTS 450-512 MHz	OCR Scan	PDF	C3-12 lc-50mA 100mA Vcc-12 transistor c3-12 acrian RF POWER TRANSISTOR C3-12-2 C312
MN301 Abstract: No abstract text available Text: MN3000 Series M N 3010 M N 3 0 1 0 DUAL 512-STAGE LOW NOISE BBD • General description Unit: mm inch The M N 3010 is a dual 512-stage low noise BBD having a w ide dynam ic range th a t provides a signal delay o f up to 25.5msec. T w o 512-stage BBDs are integrated on the same chip w hich	OCR Scan	PDF	MN3000 512-STAGE 12KHz. MN301
Untitled Abstract: No abstract text available Text: MEC JLIPD42274 Dual-Port Graphics Buffer NEC Electronics Inc. Description Features The /JPD42274 is a dual-port graphics buffer equipped with a 256Kx 4-bit random access port and a 512 x 4-bit serial read port. The serial read port is connected to an internal 2048-bit data register through a 512 x 4-bit	OCR Scan	PDF	JLIPD42274 /JPD42274 256Kx 2048-bit fiPD42274 JUPD42274 juPD42274 flPD42274 PD42274
Untitled Abstract: No abstract text available Text: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 ( A m Hi-CMOS process technology.	OCR Scan	PDF	HM628512B 512-kword ADE-203-903B 525-mil 400-mil 600-mil
nec d28c04 Abstract: No abstract text available Text: NEC #\|PD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /jPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga nized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power	OCR Scan	PDF	uPD28C04 096-bit /UPD28C04 24-pin PD28C04 pPD28C04 /iPD28C04 pPD28C04 nec d28c04

Privacy Settings

A 512 J Search Results

A 512 J Result Highlights (5)

A 512 J Price and Stock

Murata Manufacturing Co Ltd GRM3195C2A512JA01D

Murata Manufacturing Co Ltd GCM3195C2A512JA16D

E-Switch Inc PA512J

RCD Components Inc RSF1A-512-JBW

RCD Components Inc RSF1A-512-JTW

A 512 J Datasheets Context Search

Q62702-B479

AN1995

d114

vdfpn8

Untitled

VFQFPN8

Untitled

CY62148E

M25P05

CY62148E

Untitled

CY62148E

DA10

EW-512 hall effect sensor

Hitachi DSA00279

130-174

LM2469

A01 monolithic amplifier

Untitled

transistor c3-12

MN301

Untitled

Untitled

nec d28c04