EEFK1A21AP
Abstract: No abstract text available
Text: User's Guide SLVU430 – January 2011 TPS5401EVM-708 0.5-A, SWIFT Regulator Evaluation Module This user's guide contains background information for the TPS5401 as well as support documentation for the TPS5401EVM-708 evaluation module HPA708 . Also included are the performance specifications, the
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SLVU430
TPS5401EVM-708
TPS5401
HPA708)
TPS5401EVM-708.
EEFK1A21AP
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A 708 transistor
Abstract: No abstract text available
Text: KSD568/569 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB707/708 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit VcEO 100 V VcEC V VcEO 60 80 V ebo 7 V lc 7 A lc 15 A Base Current
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KSD568/569
KSB707/708
KSD568
KSD569
300/is,
A 708 transistor
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schematic diagram UPS 600 Power free
Abstract: transistor manual substitution FREE mini ups system circuit design SP705E schematic diagram mini UPS SP705 SP706 SP707 SP708 SP813L
Text: SP705-SP708-SP813L Low Power Microprocessor Supervisory Circuits June 2010 Rev. 2.0.0 GENERAL DESCRIPTION APPLICATIONS The SP705-708/813L series is a family of microprocessor µP supervisory circuits that integrate myriad components involved in discrete solutions which monitor power-supply
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SP705-SP708-SP813L
SP705-708/813L
schematic diagram UPS 600 Power free
transistor manual substitution FREE
mini ups system circuit design
SP705E
schematic diagram mini UPS
SP705
SP706
SP707
SP708
SP813L
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DM706A
Abstract: tic 706a ADM705 ADM707
Text: ► ANALOG DEVICES Low Cost |iP Supervisory Circuits ADM705—ADM708 FEATURES Guaranteed RESET Valid w ith V cc 1 V 190 nA Quiescent Current Precision Supply-Voltage M onitor +4.65 V A DM 705/A DM 707 +4.40 V (A DM 706/A DM 708) _ 200 ms Reset Pulse W idth
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ADM705--
ADM708
705/A
706/A
707/A
705-M
705-ADM
DM706A
tic 706a
ADM705
ADM707
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GD4702
Abstract: ADM705 ADM707
Text: Low Cost |iP Supervisory Circuits ADM705-ADM708 ANALOG DEVICES FEATURES Guaranteed RESET Valid w ith Vcc = 1 V 190 {iA Quiescent Current Precision Supply-Voltage M onitor +4.65 V A D M 705/A DM 707 +4.40 V (A D M 706/A DM 708) 200 ms Reset Pulse W idth _
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ADM705-ADM708
705/A
706/A
707/A
705-M
ADM705â
ADM708
GD4702
ADM705
ADM707
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coelec
Abstract: No abstract text available
Text: KSD568/569 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • C om plem ent to KSB707/708 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol R a tin g U n it C ollector-Base Voltage VcEO 100 V C ollector-E m itter Voltage : KSD 568
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KSD568/569
KSB707/708
KSD569
coelec
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breakdown gate oxide
Abstract: an7081 trapped plasma avalanche C1995 11027 AN-708 national
Text: National Semiconductor Application Note 708 Greg Komoto Marshall Davis Eric Hall June 1990 INTRODUCTION In determining the reliability of a MOS process it’s important to consider two prime factors gate oxide quality and the susceptibility of MOSFETs to hot carrier degradation It’s
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20-3A
breakdown gate oxide
an7081
trapped plasma avalanche
C1995
11027
AN-708 national
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M706
Abstract: ADM705 ADM707
Text: ANALOG DEVICES FEATURES _ Guaranteed RESET Valid w ith V cc = 1 V 190 |xA Quiescent Current Precision Supply-Voltage M onitor +4.65 V A D M 705/A D M 707 +4.40 V (A D M 706/A D M 708) 200 ms Reset Pulse W idth _ Debounced TTL/CM O S Manual Reset Input (MR)
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705/A
706/A
707/A
705-M
ADM705â
M706
ADM705
ADM707
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M705
Abstract: ADM705 ADM707
Text: ANALOG DEVICES Low Cost |xP Supervisory Circuits ADM705—ADM708 FEATURES _ Guaranteed RESET Valid w ith V cc = 1 V 190 |xA Quiescent Current Precision Supply-Voltage M onitor +4.65 V A D M 705/A D M 707 +4.40 V (A D M 706/A D M 708) 200 ms Reset Pulse W idth
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705/A
706/A
707/A
705-M
ADM705--ADM708
M705
ADM705
ADM707
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3055 5C pnp transistor
Abstract: n3055 2222 NPN 3055 pnp 3055 npn 3055 5c pnp N 2222 N2222 N2905 2N2218
Text: Switching transistors Continued Maximum ratings Characteristics ' t o t at 'c UC E O A V ^C E sat at V A *FE at / c and ^C E mA V 'o n ns CO (amb = + 4 W s Structure Fig. Nr. 5 Group Type 1q and 7B1: ; B2 mA mA mA 3; 1 2 N 708 NPN 9 0.32 0.2 15 S 0 .4
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2N2218
2N2219
3B2DIN41872
3055 5C pnp transistor
n3055
2222 NPN
3055 pnp
3055 npn
3055 5c pnp
N 2222
N2222
N2905
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transistor B A O 33st
Abstract: marking CER 5-pin
Text: 0LFURSRZHU P$ /RZ 'URSRXW &026 5HJXODWRU 0,9:708 Product Description The CM3014 is a very low dropout, low noise regulator that delivers up to 150mA of load current at a fixed output voltage. 9DULRXV UHJXODWHG RXWSXW YROWDJHV
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CM3014
150mA
MO-178)
OT23-5.
transistor B A O 33st
marking CER 5-pin
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B708
Abstract: A 708 transistor B707 PNP EPITAXIAL SILICON TRANSISTOR 5A
Text: KSB707/708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE • C o m p le m e n t to K S D 5 6 8 /5 6 9 A BSOLUTE M AXIMUM RATINGS C haracteristic Sym bol Rating Unit C o lle c to r-B a s e V o lta g e V cB O
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KSB707/708
KSD568/569
300ns,
O-220
300-SOO-
B708
A 708 transistor
B707
PNP EPITAXIAL SILICON TRANSISTOR 5A
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DK-7575
Abstract: 02ATEX
Text: Electronic Terminal Block with Optocoupler 1/2 Data sheet 56 mm / 2.2 in Optocoupler for DIN 35 rail A2 - 0V A1 + A RL +24 V 91 mm / 3.58 in Item-No. Description Input DC 24 V, Output DC 24 V / 500 mA negative switching Pack.-unit pcs 859-708 • Optocoupler for medium switching powers.
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UL508
CSA22
E175199,
UL1604/
E198726
EN50021
DK-7575
10-way
d670800e
02ATEX
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TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317
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20nttc*
10N12*
TFK 404
T1S58
BCI83L
Germanium diode OA 182
TFK diode
transistors 2n 945
v744
akai amplifier
tis62
BCI09
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BD707
Abstract: BD711 BD710 BD709 BD708 BD712 ic 709 applications
Text: BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD707, BD709, and BD711 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in power linear and switching applications.
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BD707/709/711
BD708/710/712
BD707,
BD709,
BD711
O-220
BD708,
BD710,
BD712
O-220
BD707
BD710
BD709
BD708
ic 709 applications
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sa 708
Abstract: BD707
Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS . COMPLEMENTARY PNP - NPN DEVICES APPLICATION . LINEARAND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for
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BD707/709/711
BD708/712
BD707,
BD709
BD711
O-220
BD707
BD708
BD712
sa 708
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b0711
Abstract: B0707 B0709 BD710 BD712 le 708 BD709 BD707
Text: fZ 7 SCS-THOMSON ^ 7 # raoeiis&ieim *® BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES APPLICATION . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709, and BD711 are silicon
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OCR Scan
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BD707/709/711
BD708/710/712
BD707,
BD709,
BD711
O-220
BD708,
BD710,
BD712
O-220
b0711
B0707
B0709
BD710
le 708
BD709
BD707
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ic 709
Abstract: BD708 bd707 application BD707 BD712 BD709 BD711
Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec
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BD707/709/711
BD708/712
BD707,
BD709
BD711
O-220
BD707
BD708
BD712
ic 709
bd707 application
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PDF
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BD707
Abstract: No abstract text available
Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATION ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec
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BD707/709/711
BD708/712
BD707,
BD709
BD711
O-220
BD707
BD708
BD712
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PDF
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BD707
Abstract: BD708 BD711 BD709 BD712
Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec
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BD707/709/711
BD708/712
BD707,
BD709
BD711
O-220
BD707
BD708
BD712
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PDF
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bd708
Abstract: BD707
Text: BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS • COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ s ct DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec
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BD707/709/711
BD708/712
BD707,
BD709
BD711
O-220
BD707
BD708
BD712
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BD709
Abstract: SC06960 BD707 BD708 BD712 BD710 BD711
Text: / I T S C S -n iO M S O N Ä T # [MO gfô l[L[iera®*S BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS . . SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATION . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION
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BD707/709/711
BD708/710/712
BD707,
BD709,
BD711
O-220
BD708,
BD710,
BD712
SC06960
BD709
BD707
BD708
BD710
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d705
Abstract: BD706 TRANSISTORE BD705 BD707 BD708 BD709 BD710 BD711 BD712
Text: • 7 ^ 2 3 7 0Q5ÛH25 SGS-THOMSON ^D^@g[Lg g¥il(ô ia i S G 3 _ BD705/706/707/708 BD709/710/711 /712 S-THOMSON 3ÜE D POWER LINEAR AND SWITCHING APPLICATIONS DESC RIPTIO N The BD705, BD707, BD709 and BD711 are silicon epitaxial-base NPN power transistore in Jedec TO220 plastic package intended for use in power linear
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OCR Scan
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7c12tÃ
D705/706/707/708
BD709/710/7117712
BD705,
BD707,
BD709
BD711
O-220
BD706,
BD708,
d705
BD706
TRANSISTORE
BD705
BD707
BD708
BD710
BD712
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b708
Abstract: A 708 transistor
Text: KSB707/708 KSB707/708 Low Frequency Power Amplifier • Low Speed Switching • Industrial Use • Complement to KSD568/569 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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KSB707/708
KSD568/569
O-220
PW300
Cycle10%
b708
A 708 transistor
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